2PB709ART [NEXPERIA]
45 V, 100 mA PNP general-purpose transistorProduction;
| 型号： | 2PB709ART |
| 厂家： | 
Nexperia |
| 描述： | 45 V, 100 mA PNP general-purpose transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：586K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2PB709ART
45 V, 100 mA PNP general-purpose transistor
Rev. 01 — 19 March 2007
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
NPN complement: 2PD601ART.
1.2 Features
I General-purpose transistor
I Small SMD plastic package
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
−45
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
−100
340
mA
hFE
DC current gain
VCE = −10 V;
IC = −2 mA
210
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Symbol
3
3
2
emitter
3
collector
1
1
2
2
sym013
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
2PB709ART
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
2PB709ART
C5*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
−45
−45
−6
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
V
−100
−200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
−100
mA
tp ≤ 1 ms
[1]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
250
mW
°C
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
2 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
006aaa990
300
tot
P
(mW)
200
100
0
−75
−25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig 1. Power derating curve
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
[1]
Rth(j-a)
thermal resistance from
in free air
-
-
500
K/W
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
140
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
3 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
006aaa991
3
10
δ = 1
Z
th(j-a)
0.75
0.50
0.33
(K/W)
2
10
0.20
0.10
0.05
0.02
0.01
10
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-basecut-off VCB = −45 V; IE = 0 A
Min
Typ
Max
−10
−5
Unit
nA
ICBO
-
-
-
-
current
VCB = −45 V; IE = 0 A;
Tj = 150 °C
µA
IEBO
hFE
VCEsat
fT
emitter-base cut-off VEB = −5 V; IC = 0 A
current
-
-
-
-
-
−10
340
−500
-
nA
DC current gain
VCE = −10 V;
IC = −2 mA
210
-
[1]
collector-emitter
saturation voltage
IC = −100 mA;
IB = −10 mA
mV
transition frequency VCE = −10 V;
IC = −1 mA;
70
MHz
f = 100 MHz
Cc
collector capacitance VCB = −10 V;
IE = ie = 0 A;
-
-
5
pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
4 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
006aab028
006aab029
500
−0.1
I
(mA) = −0.75
B
I
C
h
FE
−0.7
−0.6
−0.5
(1)
(A)
−0.65
−0.55
400
−0.08
−0.45
−0.35
−0.4
−0.3
−0.2
300
200
100
0
−0.06
−0.04
−0.02
0
(2)
(3)
−0.25
−0.15
−0.1
−0.05
−1
2
−10
−1
−10
−10
0
−2
−4
−6
−8
V
−10
(V)
I
(mA)
C
CE
VCE = −10 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab030
006aab031
−1.3
−1
V
BEsat
(V)
V
CEsat
(V)
−0.9
−0.5
−0.1
(1)
(2)
−1
−10
(3)
(1)
(2)
(3)
−2
−10
−1
2
−1
2
−10
−1
−10
−10
−10
−1
−10
−10
I
C
(mA)
I (mA)
C
IC/IB = 10
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
5 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
8. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 7. Package outline SOT23 (TO-236AB)
9. Packing information
Please refer to packing information on www.nexperia.com.
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
6 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
10. Soldering
2.90
2.50
2
1
0.85
0.85
solder lands
3.00
1.30
2.70
solder resist
solder paste
3
occupied area
0.60
(3x)
Dimensions in mm
0.50 (3x)
0.60 (3x)
1.00
3.30
sot023
Fig 8. Reflow soldering footprint SOT23 (TO-236AB)
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
Dimensions in mm
preferred transport direction during soldering
sot023
2.80
4.50
Fig 9. Wave soldering footprint SOT23 (TO-236AB)
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
7 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2PB709ART
20070319
Product data sheet
-
-
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
8 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
malfunction of a Nexperia product can reasonably be expected to result in
12.2 Definitions
personal injury, death or severe property or environmental damage. Nexperia
accepts no liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Nexperia products are sold subject to the
general terms and conditions of commercial sale, as published at http://
www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of any
inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness of such information
and shall have no liability for the consequences of use of such information.
Right to make changes — Nexperia reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in medical, military, aircraft, space or life
support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
9 of 10
2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.1
12.2
12.3
12.4
13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Nexperia B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to:
salesaddresses@nexperia.com
Date of release: 19 March 2007
Document identifier: 2PB709ART
相关型号：
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PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
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