1N4531 [NEXPERIA]
High-speed diodesProduction;
| 型号： | 1N4531 |
| 厂家： | 
Nexperia |
| 描述： | High-speed diodesProduction 二极管 |
| 文件： | 总10页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
1N4531; 1N4532
High-speed diodes
Product data sheet
1996 Sep 03
Supersedes data of April 1996
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD68 (DO-34) package
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
k
a
handbook, halfpage
• Repetitive peak forward current:
MAM156
max. 450 mA.
The diodes are type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
• High-speed switching
• Protection diodes in reed relays.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
75
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
75
IF
see Fig.2
200
450
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
4
1
A
A
−
0.5
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C
−
500
+200
200
mW
°C
°C
−65
−
1996 Sep 03
2
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
mV
VF
IR
IF = 10 mA; see Fig.3
see Fig.5
−
1000
reverse current
IN4531
VR = 20 V
−
−
−
−
25
50
nA
µA
nA
µA
VR = 20 V; Tj = 150 °C
VR = 50 V
IN4532
100
100
VR = 50 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
diode capacitance
IN4531
−
−
4
2
pF
pF
IN4532
trr
reverse recovery time
IN4531
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−
−
4
2
ns
ns
IN4532
reverse recovery time
IN4532
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−
−
4
3
ns
V
Vfr
forward recovery voltage
when switched from IF = 100 mA;
tr ≤ 30 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
120
UNIT
thermal resistance from junction to tie-point lead length 5 mm
thermal resistance from junction to ambient lead length 5 mm; note 1
K/W
K/W
Rth j-a
350
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03
3
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
GRAPHICAL DATA
MBG450
MBG458
300
600
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
400
(1)
(2)
(3)
100
200
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Lead length 5 mm.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
MGD004
MGD010
3
10
1.2
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.0
2
10
10
1
0.8
0.6
−1
10
−2
10
0.4
0
0
100
200
o
10
20
T ( C)
j
V
(V)
R
VR = 50 V
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
5
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 03
6
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
PACKAGE OUTLINE
0.55
max
1.6
max
3.04
max
25.4 min
25.4 min
MSA212 - 1
Dimensions in mm.
Fig.9 SOD68 (DO-34).
1996 Sep 03
7
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1996 Sep 03
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
Date of release: 1996 Sep 03
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