OC-F87VT01D [NEL]
Micro-miniature OCXO; 微缩OCXO型号: | OC-F87VT01D |
厂家: | NEL FREQUENCY CONTROLS,INC |
描述: | Micro-miniature OCXO |
文件: | 总3页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet 0635A
CRYSTAL OSCILLATORS
OC-X87XXXXX Series
Micro-miniature OCXO
Features
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•
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•
•
•
•
•
•
•
Low Cost DIL 14 package
High Vacuum Sealed Crystal
Low Power Consumption (500 mW)
Fast Warm-up Time (2 minutes)
Stratum3 or better Stability
Low Aging < 3 ppm over life
Very Low Phase Noise (-160dBc/Hz TYP)
HCMOS/TTL or Sine-Wave output
8 MHz to 160 MHz Frequencies Available
Voltage Control Optional
0.800 (20.3 mm)
1
7
Applications
0.500 (12.7 mm)
0.300 (7.6 mm)
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•
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Telecommunications
Data Communications
Instrumentation
14
8
0.600 (15.2mm)
0.340 (8.7 mm)
0.250 (6.2 mm)
Vcc
Vc
14
1
OUTPUT
DUT
8
7
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email: nelsales@nelfc.com www.nelfc.com
Data Sheet 0635A
CRYSTAL OSCILLATORS
OC-X87XXXXX Series
Micro-miniature OCXO
Specifications:
Parameter
Symb
Condition
Min
Typ
Max
Unit
Note
Absolute Maximum Ratings
Vcc
-0.5
-0.5
-40
5.5
13
85
V
3.3V or 5V Vcc
12 V Vcc
Input Break
Down Voltage
Storage temper.
Ts
°C
V
Vc
-1
6
Control Voltage
Electrical
F
∆F/F
8
10.000
±100
10
5E-9
3E-7
160
±280
50
MHz
ppb
ppb/V
1*
Frequency
Frequency stability
vs. Temp.
vs. Supply
per day
first year
15 years
See chart below
after 30 days
Aging
3E-6
± 2
.1s to 100s
5E-11
± 0.5
Allan Variance
Calibration
No voltage control
ppm
5E-8/V
Vcc sensitivity
Load sensitivity
SSB Phase Noise
For 10% change
5E-8
10 Hz
100 Hz
1 KHz
-100
-130
-145
-160
dBc/Hz
2*
>10 KHz
After 30 minutes
worst direction
±100
±2.0
5.25
3.45
12.6
0.7
ppb
ppb/G
V
Retrace
G-sensitivity
Input Voltage
Vcc
P
4.75
3.15
11.4
5.0
3.3
12.0
See chart below
steady state, 25°C
steady state, -30°C
start-up
0.5
W
Upper operating
temperature < 70°C, add
20% for UOT 85°C
CMOS Output
Power consumption
Load
1.5
2.5
10KOhm//15pF
Internally AC coupled 50 Ohm
Sine-wave output
to 0.3 ppm accuracy
2
-50
3
-40
min
dBc
Warm-up time
Sub-Harmonics
Output Waveform
τ
At higher F 1*
See chart below
3.3V HCMOS/TTL compatible, 4 ns Tr/Tf, 40/60% duty cyicle
Sine-wave, + 7 dBm ±3 dBm into 50 Ohm, -30 dBc harmonics
Vc
0
±5
4.0
3.0
V
ppm
ppm/V
V
Control voltage
Pull range
Deviation slope
Setability
from nominal F
Monotonic, posit
@25°C, Fnom.
±10
5
2.0
Customer specified
Customer specified
5V/3.3 supply
Vc0
1.0
Environmental and Mechanical
Operating temp. range
Mechanical Shock
Vibration
-30°C to 70°C Standard, Other options – see chart below
Per MIL-STD-202, 30G, 11ms
Per MIL-STD-202, 5G to 2000 Hz
Leads Temperature 260°C, for 10s, Max
Soldering Conditions
Hermetic Seal
-8
Leak rate less than 1x10 atm.ccm/s of helium
Electrical Connections
Pin 1- Vc; Pin 7- Case, GND; Pin8 – Output; Pin 14 - Vcc
Pin Out
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email: nelsales@nelfc.com www.nelfc.com
Data Sheet 0635A
CRYSTAL OSCILLATORS
OC-X87XXXXX Series
Micro-miniature OCXO
Creating a Part Number
FREQUENCY, MHz
OC – X 87 X X XX X
Package Code
OC 0.8x0.5” 4pin (14pin)
Temperature Range
Code
A
Specification
0°C to 50°C
Supply Voltage
B
C
D
E
-10°C to 60°C
0°C to 70°C
-20°C to 70°C
-30°C to 70°C
-40°C to 85°C
Code
Specification
5V ± 5%
3.3V ± 5%
12V ± 5%
0
A
F
F
Voltage Control
Temperature Stability
Code
V
Specification
Voltage
Control
No Voltage
Control
Code
05
10
28
30
Specification
5x10-8
Output
Code
T
1x10-7
0
Specification
2.8x10-7
3x10-7
TTL/
CMOS
50
YZ
5x10-7
YZx10-8
S
Sine
Not all combinations are available. Consult Factory
.
Notes:
1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic
multiplication. Both methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important –
high frequency crystal will be used. If phase noise close to the carrier and aging are more important – multiplication will be used.
Please consult factory for your specific requirement.
2* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the
phase noise roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range.
If higher frequency is achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the
crystal and is usually worse, compared to multiplied solution. On the noise floor, however it remains more or less the same.
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email: nelsales@nelfc.com www.nelfc.com
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