M55T160A [NELLSEMI]
TRIACs;
| 型号： | M55T160A |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs 三端双向交流开关 |
| 文件： | 总5页 (文件大小：724K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
M55T Series
TRIACs, 55A
Sunbberless
FEATURES
T2
T1
High current triac
G
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-3 package
T1(1)
G(3)
High commutation capability
Packages are RoHS compliant
T2(2)
APPLICATIONS
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
MAIN FEATURES
By using an internal ceramic pad, the M55T series
provides voltage insulated tab (rated at 2500VRMS)
complying with UL standards.
SYMBOL
VALUE
UNIT
A
IT(RMS)
55
The snubberless concept offer suppression of RC
network and it is suitable for applications such as :
VDRM/VRRM
IGT(Q1)
V
800 to 1600
10 to 50
Static relays
Copy machines
Microwave ovens
Heater controls
mA
Solid state switches
Motor controls
Light dimmers
ABSOLUTE MAXIMUM RATINGS
VALUE
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
Tc = 90ºC
RMS on-state current (full sine wave)
IT(RMS)
55
A
F =50 Hz
F =60 Hz
550
600
t = 20 ms
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
t = 16.7 ms
I2t
I2t Value for fusing
A2s
t
= 10 ms
1510
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =120 Hz
100
dI/dt
Peak gate current
Tp =20 µs
Tj =125ºC
Tj =125ºC
IGM
8
A
PGM
10
Peak gate power dissipation (tp = 20µs)
W
PG(AV)
Average gate power dissipation
2
Tstg
Tj
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Operating junction temperature range
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Page 1 of 5
RoHS
RoHS
M55T Series
(TJ= 25 ºC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
SNUBBERLESS and Logic level (3 quadrants)
Limits
BW
SYMBOL
TEST CONDITIONS
Unit
QUADRANT
(1)
I - II - III
I - II - III
IGT
mA
V
50
VD = 12 V, RL = 33Ω
MAX.
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
I - II - III
VGD
0.2
MIN.
MAX.
MAX.
V
(2)
IT = 500 mA
IH
mA
80
I - III
80
IG = 1.2 IGT
IL
mA
II
160
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
1000
20
MIN.
(dI/dt)c(2)
Without snubber, Tj = 125°C
A/ms
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
10
(2)
ITM = 82 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
50
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
mA
8
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
VALUE
0.50
50
SYMBOL
Rth(j-c)
Rth(j-a)
Junction to case (AC)
°C/W
Junction to ambient
S = Copper surface under tab.
PRODUCT SELECTOR
PART NUMBER
VOLTAGE (xx)
SENSITIVITY
TYPE
PACKAGE
1000 V
1200 V
1600 V
800 V
V
50 mA
Snubberless
TO-3
M55TxxA
V
V
V
ORDERING INFORMATION
,
BASE Q TY
ORDERING TYPE
MARKING
M55TxxA
PACKAGE
TO-3
WEIGHT
DELIVERY MODE
23g
M55TxxA
50
BOX
Note : xx = voltage
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Page 2 of 5
RoHS
RoHS
M55T Series
ORDERING INFORMATION SCHEME
55
60
M
T
A
Module type
M = TO-3 Fast-on package
Current
55 = 55A
Triac series
Voltage
80 = 800V
100 = 1000V
120 = 1200V
160 = 1600V
Assembly type
A = Soldering Assembly
Fig.1 Maximum power dissipation versus on-state RMS
current (full cycle)
Fig.2 On-state RMS current versus case temperature
(full cycle)
P (W)
IT(RMS) (A)
60
60
α=180°
50
40
30
50
40
30
20
10
0
180°
α
20
α
10
Tc(°c)
IT(RMS)(A)
0
0
5
10
15
20
25
30
35
40
45
50
55
0
25
50
75
100
125
Fig.3 Relative variation of thermal impedance
versus pulse duration.
Fig.4 On-state characteristics (maximum values).
K=[Zth/Rth]
ITM(A)
1E+00
400
100
Zth(j-c)
T =T max
j
j
1E-01
1E-02
T =25°C
j
10
1
T max.
j
V
= 0.85 V
to
R
= 10 mΩ
d
VTM(V)
tp(s)
1E-03
1E-03
1E-02
1E-01
1E+00
1E+01 1E+02
1E+0.3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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Page 3 of 5
RoHS
RoHS
M55T Series
Fig.5 Surge peak on-state current versus number
of cycles.
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse and corresponding
value of l2t.
ITSM(A),l2t(A2s)
ITSM(A)
10000
600
T initial=25°C
j
500
450
400
350
300
250
200
150
100
50
dl/dt limitation
Pulse width tp <10 ms
100A/µs
t=20ms
Non repetitive
T initial=25°C
j
ITSM
One cycle
I2t
1000
100
t=10ms
Half cycle
tp (ms)
Number of cycles
0
0.01
0.10
1.00
10.00
1
10
100
1000
Fig.7 Relative variation of gate trigger, holding
and latching current versus junction
temperature.
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / specified (dI/dt)c
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.0
2.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
lGT
1.5
1.0
0.5
0.0
Typical values
lH & lL
0.6
(dV/dt)c (V/µs)
Tj(°C)
0.4
-40
-20
0
20
40
60
80
100 120 140
0.1
1.0
10.0
100.0
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
Tj(°C)
0
25
50
75
100
125
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Page 4 of 5
RoHS
RoHS
M55T Series
Case Style
TO-3
2-Ø4.2±0.1
30.0±0.1
Ø1.3(G)
5-Ø1.3±0.2
3.0±0.3
All dimensions in millimeters
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Page 5 of 5
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