85FDR02 [NELLSEMI]
Fast Recovery Diodes;
| 型号： | 85FDR02 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Fast Recovery Diodes |
| 文件： | 总6页 (文件大小：647K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
85FD(R)Series
SEMICONDUCTOR
Nell High Power Products
Fast Recovery Diodes
Available
(Stud Version), 85A
RoHS*
COMPLIANT
FEATURES
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Stud cathode and stud anode versions
Voltage up to 1200 VRRM
Compliant to RoHS directive 2002/95/EC
TYPICAL APPLICATIONS
DC power supplies
lnverters
Converters
DO-203AB(DO-5)
Choppers
Ultrasonic systems
Freewheeling diodes
PRODUCT SUMMARY
IF(AV)
85A
MAJOR RATINGS AND CHARACTERISTICS
85FD(R)
SYMBOL
CHARACTERISTICS
UNIT
A
85
85
IF(AV)
Maximum TC
ºC
50 HZ
1308
1369
8554
7778
IFSM
I2t
A
60 HZ
50 HZ
60 HZ
A2s
I2√t
VRRM
trr
I2√s
85543
200 to 1200
Range
V
See Recovery Characteristics table
-40 to 125
ns
ºC
TJ
Range
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
IFM, MAXIMUM PEAK REVERSE
CURRENT AT RATED VRRM
mA
VRRM, MAXIMUM
VRSM, MAXIMUM PEAK
NON-REPETITIVE
TYPE
NUMBER
VOLTAGE
CODE
PEAK REPETITIVE
REVERSE VOLTAGE
TJ = -40°C TO 125°C
REVERSE VOLTAGE
TJ = 25°C TO 125°C
TJ = 25°C
TJ = 125°C
V
V
02
04
06
08
200
400
600
800
300
500
700
900
0.1
20
85FD(R)
10
1000
1200
1100
1300
12
Page 1 of 6
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RoHS
85FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
FORWARD CONDUCTION
85FD(R)
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
85
A
Maximum average forward current
at maximum case temperature
IF(AV)
180° conduction, half sine wave
ºC
A
85
IF(RMS)
IFRM
Maximum RMS forward current
133
Maximum peak repetitive forward current
470
Sinusoidal half wave, 30° conduction
t = 10ms
A
1100
Sinusoidal half wave, 100% VRRM
Maximum peak, one-cycle
non-reptitive surge current
reapplied, initial TJ =TJ maximum
t = 8.3ms
t = 10ms
t = 8.3ms
1151
1308
IFSM
A
Sinusoidal half wave, no voltage
reapplied, initial TJ =TJ maximum
1369
6050
5498
8554
7778
t = 10ms
t = 8.3ms
t = 10ms
100% VRRM reapplied,
initial TJ =TJ maximum
A2s
I2t
Maximum l²t for fusing
no voltage reapplied,
initial TJ =TJ maximum
t = 8.3ms
Maximum l²√t for fusing(1)
I2√t
A2√s
t = 0.1 ms to 10 ms, no voltage reapplied
85543
Maximum value of threshold voltage
V
1.128
2.11
1.75
V
mΩ
V
F(TO)
TJ = 125°C
r
Maximum value of forward slope resistance
Maximum forward voltage drop
F
VFM
TJ = 25°C; lFM = 265A
Note : (1) l2t for time tx =I2√t √tx
SWITCHING
85FD(R)
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
08 to 12
02 to 06
TJ = 25°C, IF = 0.5A, IR = 1.0A,
IRR = 250mA (RG#1 CKT)
500
200
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
Typical reverse recovery time
trr
120
ns
50
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
500
340
200
70
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
Typical reverse recovered charge
nC
Qrr
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
1300
240
Page 2 of 6
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RoHS
85FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
THERMAL AND MECHANICAL SPECIFCATIONS
85FD(R)
-40 to125
- 40 to150
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Maximum junction operating
temperature range
TJ
ºC
Maximum storage temperature range
Tstg
Maximum thermal resistance,
junction to case
0.30
0.25
RthJC
RthCS
DC operation
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
Not lubricated threads, tighting on nut(1)
Lubricated thread, tighting on nut (1)
Not lubricated threads, tighting on hexagon(2)
Lubricated thread, tighting on hexagon(2)
3.4(30)
2.3(20)
4.2(37)
3.2(28)
N · m
Maximum allowable mounting torque
(+0%, -10%)
(lbf · in)
g
oz.
25
0.88
Approximate weight
Case style
JEDEC
DO-203AB (DO-5)
Note : (1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
RthJC CONDUCTION
CONDUCTION ANGEL
85FD(R)
TEST CONDUCTIONS
UNITS
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180˚
120˚
60˚
0.21
0.37
0.39
0.82
1.41
0.37
0.82
1.41
TJ = 150°C
K/W
30˚
Note
• The table above shows the increment of thermal resistance RthJC when devices
operate at different conduction angles than DC
ORDERING INFORMATION SCHEME
85 FD R
06
A
Current
85 = 85A
Diode type
FD = Fast Recovery Diode
Polarity
R = Reverse, Anode on Stud
None = standard, Cathode on Stud
Voltage
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
Trr value
A = 200 ns Max.
B = 500 ns Max.
Page 3 of 6
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RoHS
85FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Current rating nomogram (Sinusoidal Waveforms)
25
20
15
10
85FD(R)Series
= 150°C
T
J
ø =180°
120°
60°
30°
RMS Limit
180° 0.37
120° 0.39
60° 0.82
5
0
Conduction Angle
30°
1.41
0
2
4
6
8
10 12 14 16 10 20 30 40 50 60 70 80 90 100
Average forward current (A)
Maximum allowable ambient temperature (°C)
Fig.2 Current rating nomogram (Rectangular waveforms)
35
30
25
20
15
10
5
85FD(R)Series
T
= 150°C
J
ø =180°
120°
60°
DC
30°
DC
0
180° 0.21
120° 0.37
60° 0.82
30° 1.41
RMS Limit
ø
Conduction Angle
0
5
15
20
0
10
25
10 20 30 40 50 60 70 80 90 100
Average forward current (A)
Maximum allowable ambient temperature (°C)
Fig. 4 Maximum forward voltage vs. forward
current.
Fig .3 Maximum high level forward power
loss vs. average forward current
104
103
85FD(R)Series
85FD(R)Series
T
= 125°C
J
ø =180°
120°
60°
ø =DC
180°
120°
60°
30°
103
102
30°
T
= 125°C
J
102
10
10
1
T
= 25°C
J
102
Average forward current (A)
104
10
103
0
1
2
3
4
Instantaneous forward voltage (V)
Page 4 of 6
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RoHS
85FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig .6 Typical reverse recovery time vs.
rate of fall of forward current.
Fig.5 Average forward current vs. maximum
allowable case temperature.
104
125
85FD(R)Series
85FD(R), 200 to 600V
T
= 125°C
J
l
l
l
= 265A
= 50A
= 1A
F
F
F
110
100
ø =180°
120°
60°
400
30°
90
80
70
60
T
= 25°C
102
40
J
l
l
l
= 265A
= 50A
= 1A
F
F
F
ø =180°
120°
90°
60°
30°
DC
50
40
10
4
40
1
10
100
0
20
40
60
80 100 120 140
Average forward current (A)
Rate of fall of forward current (A/µs)
Fig .7 Typical recovered charge vs.
rate of fall of forward current.
Fig .8 Typical reverse recovery time vs.
rate of fall of forward current.
104
5000
85FD(R), 200 to 600V
85FD(R), 800 to 1200V
4000
103
102
T
= 125°C
l
l
l
= 265A
= 50A
= 1A
J
F
F
F
l
l
= 265A
= 50A
F
F
l
= 1A
F
1000
400
300
T
= 25°C
J
10
1
l
l
l
= 265A
= 50A
= 1A
F
F
F
200
100
1
4
10
40
100
1
4
10
40
100
Rate of fall of forward current (A/µs)
Rate of fall of forward current (A/µs)
Fig .9 Typical recovered charge vs.
rate of fall of forward current.
105
85FD(R), 800 to 1200V
104
103
l
l
= 265A
= 50A
F
F
l
= 1A
F
102
10
1
4
10
40
100
Rate of fall of forward current (A/µs)
Page 5 of 6
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RoHS
85FD(R)Series RoHS
SEMICONDUCTOR
Nell High Power Products
DO-203AB(DO-5)
19(0.75)
Ø15.2(Ø0.598) Max
Ø4.0(Ø0.157)
6.2/7.0
0.7/1.1
(0.24/0.28)
(0.028/0.043)
1/4” 28UNF-2A
For metric devices: M6x1.0
85FD(R)..
85FD..
AII dimensions in millimeters (inches)
Page 6 of 6
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