6PT06G [NELLSEMI]
Stansard SCRs, 6A; Stansard可控硅, 6A型号: | 6PT06G |
厂家: | NELL SEMICONDUCTOR CO., LTD |
描述: | Stansard SCRs, 6A |
文件: | 总5页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
RoHS
6PT Series
SEMICONDUCTOR
Stansard SCRs, 6A
Main Features
2
2
Symbol
Value
Unit
IT(RMS)
A
6
600 to 1000
15
2
1
1
3
2
VDRM/VRRM
IGT
V
3
TO-251 (I-PAK)
(6PTxxF)
TO-252 (D-PAK)
mA
(6PTxxG)
2
DESCRIPTION
The 6PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
1
1
2
2
3
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
(6PTxxAI)
(6PTxxA)
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=110°C
Tc=105°C
Tc=110°C
Tc=105°C
TO-251/TO-252/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
6
A
TO-220AB insulated
TO-251/TO-252/TO-220AB
Average on-state current
(180° conduction angle)
IT(AV)
3.8
A
TO-220AB insulated
F =50 Hz
t = 20 ms
70
73
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
24.5
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
IGM
Tj = 125ºC
50
Tp = 20 µs
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
Tp =20µs
Maximum gate power
PGM
W
W
PG(AV)
Average gate power dissipation
Repetitive peak off-state voltage
Tj =125ºC
Tj =125ºC
VDRM
VRRM
Tstg
600 to 1000
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
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Page 1 of 5
RoHS
RoHS
6PT Series
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
6PTxxxx
SYMBOL
Unit
TEST CONDITIONS
IGT
15
mA
V
Max.
Max.
VD = 12V, RL = 30Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
RGK = 220Ω, Tj = 110°C
VGD
Min.
0.2
V
IH
IL
IT = 100mA, Gate open
IG = 1.2× IGT
Max.
Min.
Min.
30
50
mA
mA
V/µs
VD = 67% VDRM Gate open, Tj = 110°C
,
dV/dt
VTM
200
1.6
5
Tj = 25°C
Tj = 25°C
Tj = 110°C
IT = 12A, tP = 380 µs
Max.
Max.
Max.
V
µA
mA
IDRM
IRRM
VD=VDRM, VR=VRRM
RGK = 220Ω
2
VD = 67% VDRM ITM = 12A, VR = 25V
,
dITM = 30A/µs, dVD/dt =50V/µs
Tj = 110°C
70
TYP.
tq
µS
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
Rth(j-c)
Junction to case (DC)
Junction to ambient
2.5
°C/W
IPAK/DPAK/TO-220AB
S = 0.5 cm2
70
60
TO-252(D-PAK)
TO-220AB
Rth(j-a)
°C/W
TO-251(I-PAK)
100
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
PACKAGE
SENSITIVITY
600 V
800 V
1000 V
V
V
V
V
V
V
V
V
6PTxxA/6PTxxAl
6PTxxF
15 mA
15 mA
15 mA
TO-220AB
I-PAK
6PTxxG
D-PAK
V
ORDERING INFORMATION
,
WEIGHT
PACKAGE
DELIVERY MODE
ORDERING TYPE
6PTxxA
MARKING
BASE Q TY
6PTxxA
6PTxxAI
2.0g
2.3g
TO-220AB
50
50
Tube
Tube
6PTxxAI
TO-220AB (insulated)
6PTxxF
6PTxxG
6PTxxF
6PTxxG
0.40g
0.38g
TO-251(I-PAK)
TO-252(D-PAK)
80
80
Tube
Tube
Note: xx = voltage
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Page 2 of 5
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RoHS
6PT Series
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
6 PT 06
Current
6 = 6A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (IPAK)
G = TO-252 (DPAK)
Fig.1 Maximum average power dissdipation
versus average on-state current
Fig.2 Correlation between maximum average
power dissipation and maximum
allowable temperature(Tamb and Tlead
)
P(W)
Tlead(°C)
=0°C/W
th
P(W)
7
6
7
6
R
R
=10°C/W
R
=5°C/W
th
R
=15°C/W
α=180°
th
th
110
DC
α=180°
α=120°
5
4
3
2
5
4
3
2
α=90°
α=60°
115
120
125
α=30°
360°
1
0
1
0
I
(A)
Tamb(°C)
60
80
T(AV)
α
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
20
40
100
120
140
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Page 3 of 5
RoHS
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6PT Series
SEMICONDUCTOR
Fig.4 Relative variation of thermal impedance
versus pulse duration
Fig.3 Average on-state current versus case
temperature
IT(AV)(A)
K=[Zth(j-c)/Rth(j-c)]
7
6
1
DC
Z
th(j-c)
TO-220AB
Insulated
5
4
α=180°
Z
th(j-a)
0.1
3
2
TO-251/TO-252
TO-220AB
1
0
t (s)
p
T
(°C)
case
0.01
1E-3
0
20 30 40 50 60 70 80 90 100 110 120 130
1E+0
5E+2
10
1E-2
1E-1
1E+1
1E+2
Fig.5 Relative variation of gate trigger current
versus junction temperature
Fig.6 Surge peak on-state current versus number
of cycles
IT(AV)(A)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25 C]
2.5
2
80
70
60
50
tp=10ms
One cycle
1.5
1
Tj inital=25°C
IGT
40
30
20
IH&IL
0.5
0
10
0
Number of cycles
T (°C)
j
1000
1
10
100
0
50
-40 -30 -20 -10
10 20 30 40
60 70 80
90
100 110
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms,
and corresponding values of l²t
Fig.8 On-state characteristics (maximum values)
ITM(A)
ITSM(A),I²t(A²s)
100
Tj inital=25 C
Tj=max
ITSM
100
10
Tj=25°C
I²t
Tjmax
Vt0=0.1V
Rd=46mΩ
t
(ms)
p
VTM(V)
10
1
1
2
5
10
1
2
3
4
5
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Page 4 of 5
RoHS
RoHS
6PT Series
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
2
8.89 (0.350)
8.38 (0.330)
1
3
4.06 (0.160)
29.16 (1.148)
28.40 (1.118)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-251
(I-PAK)
6.6(0.26)
6.4(0.52)
2.4(0.095)
2.2(0.086)
1.5(0.059)
0.62(0.024)
0.48(0.019)
5.4(0.212)
5.2(0.204)
1.37(0.054)
6.2(0.244)
6(0.236)
4T
16.3(0.641)
15.9(0.626)
RoHS
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.65(0.026)
0.55(0.021)
0.76(0.03)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
1
2
3
0.89(0.035)
0.64(0.025)
0.62(0.024)
0.45(0.017)
1.14(0.045)
0.76(0.030)
2.28(0.090)
2
(A2)
4.57(0.180)
(G)3
1(A1)
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Page 5 of 5
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