55PT08A [NELLSEMI]
Stansard SCRs, 55A; Stansard可控硅， 55A
| 型号： | 55PT08A |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Stansard SCRs, 55A |
| 文件： | 总5页 (文件大小：885K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
55PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 55A
2
Main Features
Symbol
Value
55
Unit
1
1
2
3
IT(RMS)
A
2
3
VDRM/VRRM
IGT
V
600 to 1600
80
TO-220AB (non-Insulated)
(55PTxxA)
TO-220AB (lnsulated)
(55PTxxAI)
mA
A2
DESCRIPTION
The 55PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
and high power motor control.
A1
A2
G
A1
A2
G
TO-3P (non-Insulated)
TO-3P (Insulated)
(55PTxxB)
(55PTxxBI)
A2
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500VRMS).
A1
A2
1
2
3
G
2
(A2)
TO-263 (D2PAK)
(55PTxxH)
TO-247AB (non-Insulated)
(G)3
(55PTxxC)
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc=85°C
TO-3P/TO-247AB
RMS on-state current full sine wave
IT(RMS)
Tc=80°C
Tc=70°C
Tc=85°C
Tc=80°C
Tc=70°C
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
TO-3P/TO-247AB
55
35
A
(180° conduction angle )
Average on-state current
(180° conduction angle)
A
IT(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
F =50 Hz
t = 20 ms
520
540
Non repetitive surge peak on-state
ITSM
I2t
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t Value for fusing
A2s
tp = 10 ms
1352
Critical rate of rise of on-state current
VD = 67% VDRM, tp = 200μs, IG = 0.3A
dIG/dt = 0.3A/μs
Tj = 125ºC
A/µs
dI/dt
F = 60 Hz
150
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Peak gate current
IGM
5
10
2
A
PGM
PG(AV)
VDRM
Maximum gate power
W
W
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
Tj =125ºC
600 to 1600
V
VRRM
Tstg
Tj
- 40 to + 150
- 40 to + 125
5
ºC
V
Maximum peak reverse gate voltage VRGM
Page 1 of 5
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RoHS
55PT Series RoHS
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
55PT06xx 55PT10xx
SYMBOL
TEST CONDITIONS
55PT16xx
Unit
55PT08xx
55PT12xx
40
IGT
Max.
Max.
Min.
30
80
mA
V
VD = 12V, RL = 33Ω
VGT
1.5
Tj = 125°C
VGD
IH
0.2
VD = VDRM, RL = 3.3KΩ, RGK = 220Ω
V
IT = 500mA, Gate open
Max.
Max.
80
100
130
1000
1.6
10
120
150
mA
mA
V/µs
IL
IG = 1.2×IGT
100
700
VD = 67% VDRM Gate open
,
Tj = 125°C
Tj = 25°C
Tj = 25°C
dV/dt
VTM
Min.
Max.
Max.
Max.
Max.
Max.
1000
IT = 80A, tP = 380µs
V
µA
VD=VDRM, VR=VRRM
RGK = 220Ω
IDRM
IRRM
Tj = 125°C
Tj = 125°C
Tj = 125°C
6
mA
V
Threshold Voltage
Dynamic Resistance
Vto
Rd
1.02
85
mΩ
THERMAL RESISTANCE
VALUE
0.8
0.9
45
SYMBOL
Parameter
UNIT
D2PAK/TO-220AB/TO-3P/TO-247AB
TO-220AB insulated/TO-3P insulated
TO-263(D2PAK)
Rth(j-c)
Junction to case (DC)
°C/W
S = 1 cm2
Rth(j-a)
Junction to ambient
TO-220AB/TO-220AB insulated
TO-3P/TO-247AB/TO-3P insulated
60
°C/W
50
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
PACKAGE
800 V
1200 V
600 V
1000 V
1600 V
55PTxxA/55PTxxAl
55PTxxH
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
80 mA
80 mA
80 mA
80 mA
TO-220AB
D2PAK
TO-3P
55PTxxB/55PTxxBI
55PTxxC
TO-247AB
ORDERING INFORMATION
,
BASE Q TY
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
DELIVERY MODE
Tube
2.0g
55PTxxA
55PTxxA
TO-220AB
50
50
50
30
30
30
TO-220AB (insulated)
TO-263(D2PAK)
TO-3P
2.3g
2.0g
4.3g
4.8g
5g
55PTxxAI
55PTxxH
55PTxxAI
55PTxxH
55PTxxB
55PTxxBI
55PTxxC
Tube
Tube
55PTxxB
Tube
55PTxxBI
TO-3P insulated
TO-247AB
Tube
55PTxxC
Tube
Note: xx = voltage
Page 2 of 5
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RoHS
55PT Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
55 PT 06
Current
55 = 55A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
B = TO-3P (non-insulated)
BI = TO-3P ( insulated)
C = TO-247AB
H = TO-263 (D2PAK)
Fig.1 Maximum power dissipation versus
average on-state current (half cycle)
Fig.2 RMS on-state current versus case
temperature (full cycle)
IT(RMS)
P(W)
60
55
80
70
TO-3P
TO-247AB
50
45
40
35
30
25
20
15
10
5
60
50
TO-220AB insulated
TO-3P insulated
40
30
20
TO-220AB
TO-263
10
0
lT(AV)(A)
0
0
25
50
75
100
125
0
4
8
12
16
20
24
28
32
36
40
Fig.4 Surge peak on-state current versus
number of cycles.
Fig.3 On-state characteristics
(maximum values).
ITM (A)
550 ITSM (A)
100
10
1
500
450
Tj max.
Vo = 1.02 V
Rd = 85 mΩ
t=10ms
Half cycle
Tj=Tj max
400
350
300
250
200
Non repetitive
Tj initial=25°C
Tj=25°C
150
100
50
Number of cycles
VTM(V)
0
1
10
100
1000
0
0.5
1.0
1.5
2.0
2.5
Page 3 of 5
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RoHS
55PT Series RoHS
SEMICONDUCTOR
Fig.6 Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
(typical values)
Fig.5 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
value of l2t .
ITSM (A), l2t (A2s)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
3.0
10000
Tj initial=25°C
2.5
2.0
1.5
1.0
0.5
0.0
dI/dt ≤ 150A/µs
ITSM
I2t
1000
100
lGT
lH&lL
t=10ms
Half cycle
tp (ms)
Tj(°C)
40 60
0.01
0.1
1.0
10.0
-40
-20
0
20
80
100 120 140
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
2
(A2)
(G)3
1(A1)
Page 4 of 5
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RoHS
55PT Series RoHS
SEMICONDUCTOR
Case Style
TO-3P
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
16.15 (0.242)
20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)
RoHS
1
2
3
2.87 (0.113)
3.12 (0.123)
4.50 (0.177)Max
1.65 (0.065)
2.13 (0.084)
0.40 (0.016)
0.79 (0.031)
(TYP.)
19.81 (0.780)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
(TYP.)
2.21 (0.087)
2.59 (0.102)
5.45 (0.215)
5.45 (0.215)
2
(A2)
(G)3
1(A1)
Page 5 of 5
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