4PT08AI-03 [NELLSEMI]
Sensitive gate SCRs, 4A; 敏感栅可控硅， 4A
| 型号： | 4PT08AI-03 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Sensitive gate SCRs, 4A |
| 文件： | 总6页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
4PT Series
SEMICONDUCTOR
Sensitive gate SCRs, 4A
Main Features
2
2
Symbol
Value
4
Unit
IT(RMS)
A
2
1
1
3
2
VDRM/VRRM
IGT
V
600 to 800
10 to 200
3
TO-251 (I-PAK)
TO-252 (D-PAK)
µA
(4PTxxF)
(4PTxxG)
2
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the available
gate current is limited, such as motor control for hand
tools, kitchen aids, capacitive discharge ignitions,
overvoltage crowbar protection for low power supplies
among others.
1
2
3
1
2
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
(4PTxxAI)
(4PTxxA)
2
(A2)
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=115°C
Tc=110°C
Tc=115°C
Tc=110°C
t = 20 ms
TO-251/TO-252/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
4
A
TO-220AB insulated
TO-251/TO-252/TO-220AB
Average on-state current
(180° conduction angle)
IT(AV)
2.5
A
TO-220AB insulated
F =50 Hz
30
33
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
t = 16.7 ms
F =60 Hz
I2t Value for fusing
I2t
A2s
A/µs
tp = 10 ms
4.5
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
Tj = 125ºC
Tj = 125ºC
50
IGM
PG(AV)
VDRM
VRRM
Tstg
Peak gate current
Tp = 20 µs
Tj =125ºC
1.2
0.2
A
Average gate power dissipation
Repetitive peak off-state voltage
W
600 and 800
V
Tj =125ºC
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
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Page 1 of 6
RoHS
RoHS
4PT Series
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
4PTxxxx
SYMBOL
Unit
TEST CONDITIONS
10
200
0.8
Min.
Max.
Max.
IGT
µA
V
VD = 12V, RL = 30Ω
VGT
VD = VDRM, RL = 3.3KΩ
RGK = 220Ω, Tj = 125°C
VGD
Min.
0.1
V
IH
IL
IT = 50mA, RGK = 1KΩ
IG = 1mA, RGK = 1KΩ
Max.
Min.
Min.
5
6
mA
mA
V/µs
VD = 67% VDRM RGK = 1KΩ, Tj = 125°C
,
dV/dt
VTM
10
1.6
5
Tj = 25°C
Tj = 25°C
Tj = 125°C
IT = 8A, tP = 380 µs
Max.
Max.
Max.
V
µA
mA
IDRM
IRRM
VD=VDRM, VR=VRRM
RGK = 220Ω
0.5
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
Rth(j-c)
Junction to case (DC)
Junction to ambient
2.8
°C/W
IPAK/DPAK/TO-220AB
S = 0.5 cm2
70
60
TO-252(D-PAK)
TO-220AB
Rth(j-a)
°C/W
TO-251(I-PAK)
100
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
PACKAGE
SENSITIVITY
600 V
800 V
1000 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
70~200 µA
4PTxxA-S/4PTxxAl-S
TO-220AB
TO-220AB
TO-220AB
10~30 µA
20~30 µA
4PTxxA-03/4PTxxAl-03
4PTxxA-05/4PTxxAl-05
4PTxxA-06/4PTxxAl-06
4PTxxA-08/4PTxxAl-08
30~60 µA
50~80 µA
TO-220AB
TO-220AB
V
V
V
V
V
V
V
V
4PTxxF-S
70~200 µA
10~30 µA
20~30 µA
I-PAK
I-PAK
I-PAK
4PTxxF-03
4PTxxF-05
4PTxxF-06
4PTxxF-08
4PTxxG-S
30~60 µA
50~80 µA
70~200 µA
V
V
V
V
V
V
V
V
I-PAK
I-PAK
D-PAK
V
V
V
V
V
D-PAK
D-PAK
D-PAK
4PTxxG-03
4PTxxG-05
4PTxxG-06
10~30 µA
20~30 µA
V
V
V
V
V
30~60 µA
50~80 µA
V
V
D-PAK
4PTxxG-08
V
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Page 2 of 6
RoHS
RoHS
4PT Series
SEMICONDUCTOR
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
4PTxxA-yy
MARKING
BASE Q TY
4PTxxA-yy
4PTxxAI-yy
TO-220AB
50
50
Tube
Tube
4PTxxAI-yy
TO-220AB (insulated)
2.3g
4PTxxF-yy
4PTxxG-yy
4PTxxF-yy
4PTxxG-yy
0.40g
0.38g
TO-251(I-PAK)
TO-252(D-PAK)
80
80
Tube
Tube
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
-
S
4 PT 06
Current
4 = 4A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Fig.1 Maximum average power dissipation versus
on-state current
Fig.2 Average and DC on-state current versus
case temperature
IT(AV)(A)
P(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
4.0
3.5
α=180°
DC
3.0
2.5
2.0
1.5
1.0
TO-220AB
Insulated
α=180°
TO-251/TO-252
TO-220AB
360°
1.0
0.5
0.0
0.5
0.0
α
T
(°C)
case
IT(AV)(A)
1.5
0.0
0.5
1.0
2.0
2.5
3.0
0
25
50
75
100
125
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Page 3 of 6
RoHS
RoHS
4PT Series
SEMICONDUCTOR
Fig.4 Relative variation of thermal impedance
junction to ambient versus pulse duration
(DPAK)
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
K=[Zth(j-c)/Rth(j-c)]
IT(AV)(A)
1E+0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Device mounted on FR4 with
recommended pad layout
Z
th(j-c)
DPAK (S = 0.5cm²)
DC
α=180°
1E-1
Z
th(j-a)
IPAK
DC
1E-2
1E-3
α=180°
Device mounted on FR4 with
recommended pad layout
0.2
0.0
t
(s)
T
(°C)
p
amb
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
5E+2
1E+2
Fig.5 Relative variation of gate trigger current
and holding current versus junction
temperature
Fig.6 Relative variation of holding current
versus gate-cathode resistance
(typical values)
IH[RGK] / IH[RGK=1KΩ
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25 C]
5
2.0
Tj=25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
4
3
2
IGT
lhand IL
RGK=1KΩ
0.4
T (°C)
j
1
0
0.2
0.0
RGK(KΩ)
-40 -20
0
20
40
60
80
100 120 140
1E-2
1E-1
1E+0
1E+1
Fig.8 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
Fig.7 Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
dV/dt[RGK] / dV/dt[RGK=220Ω]
dV/dt[CGK] / dV/dt[RGK=220Ω]
10.00
1.00
10
Tj=125 C
VD=0.67 X VDRM
VD=0.67 X VDRM
Tj=125°C
8
6
4
2
0
R
=220Ω
GK
0.10
0.01
C
(nF)
R
(KΩ)
GK
GK
0
200
600 800 1000 1200 1400
1800 2000
6
400
1600
0
2
8
10 12 14 16 18
22
4
20
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Page 4 of 6
RoHS
RoHS
4PT Series
SEMICONDUCTOR
Fig.9 Surge peak on-state current versus
number of ctcles
Fig.10 Non-repetitive surge peak on-state
current, and corresponding values
of l²t
ITSM(A),I²t(A²s)
ITSM(A)
300
100
35
30
Tj inital=25°C
dI/dt Iimitation
tp=10ms
ITSM
25
20
One cycle
Non repetitive
Tj inital=25°C
15
10
5
10
Repetitive
Tc=115°C
I²t
Sinusoidal pulse with
width < 10ms
t
(ms)
Number of cycles
10
100
p
0
1
1000
1
0.01
0.10
1.00
10.00
Fig.11 On-state characteristics (maximum
values)
Fig.12 Thermal resistance junction to ambient
versus copper surface under tab (DPAK)
Rth(j-a)(°C/W)
ITM(A)
100
50.0
10.0
Epoxy printed circuit board FR4
copper thickness = 35µm
Tjmax
Vt0=0.85V
Rd=90mΩ
80
60
40
Tj=max
RoHS
1.0
0.1
Tj=25°C
20
0
S(cm²)
10
VTM(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
12 14
16
18
20
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Page 5 of 6
RoHS
RoHS
4PT Series
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
2
8.89 (0.350)
8.38 (0.330)
1
3
4.06 (0.160)
29.16 (1.148)
28.40 (1.118)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-251
(I-PAK)
6.6(0.26)
6.4(0.52)
2.4(0.095)
2.2(0.086)
1.5(0.059)
0.62(0.024)
0.48(0.019)
5.4(0.212)
5.2(0.204)
1.37(0.054)
6.2(0.244)
6(0.236)
4T
16.3(0.641)
15.9(0.626)
RoHS
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.65(0.026)
0.55(0.021)
0.76(0.03)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
1
2
3
0.89(0.035)
0.64(0.025)
0.62(0.024)
0.45(0.017)
1.14(0.045)
0.76(0.030)
2.28(0.090)
2
(A2)
4.57(0.180)
(G)3
1(A1)
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Page 6 of 6
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