1T06E-S [NELLSEMI]
Standard TRIACs, 1A; 标准的双向可控硅， 1A
| 型号： | 1T06E-S |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Standard TRIACs, 1A |
| 文件： | 总5页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
1T Series RoHS
SEMICONDUCTOR
Standard TRIACs, 1A
FEATURES
On-state RMS current, lT(RMS)=1A
Repetitive peak off-state voltage,
VDRM/VRRM = 600 or 800V
Triggering gate current, lGT (Q1) 3 to 25 mA
APPLICATIONS
The 1T series is suitable for general purpose
AC switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small
lamp control), fan speed controllers,...
A2
TO-92
(1TxxE)
G
A1
Different gate current sensitivities are available,
allowing optimized performance when driven
directly through microcontrollers
MAIN FEATURES
SYMBOL
VALUE
UNIT
A
IT(RMS)
1
VDRM/VRRM
IGT(Q1)
V
600 to 800
3 to 25
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Tc = 110ºC
VALUE
UNIT
IT(RMS)
RMS on-state current (full sine wave)
TO-92
1
A
F =50 Hz
F =60 Hz
t = 20 ms
16
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
ITSM
A
t = 16.7 ms
17.6
1.28
l2t Value for fusing
I2t
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
lG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
dI/dt
F =100 Hz
50
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
1
1
A
PG(AV)
Average gate power dissipation
W
Tj =125ºC
Peak gate power dissipation
PGM
Tstg
5
Stroage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
www.nellsemi.com
Page 1 of 5
RoHS
1T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
1Txxxx
UNIT
TEST CONDITIONS
SYMBOL
QUADRANT
T
3
5
D
5
S
A
10
10
25
25
I - II - III
IV
(1)
IGT
MAX.
mA
V
10
VD = 12 V, RL = 30Ω
VGT
VGD
ALL
1.3
0.2
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 50 mA
ALL
V
(2)
7
7
10
10
20
10
15
25
25
25
50
mA
IH
MAX.
MAX.
I - III - IV
IL
IG = 1.2 IGT
mA
II
15
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 110°C
V/µs
V/µs
MIN.
MIN.
10
20
1
50 100
(dV/dt)c(2)
(dI/dt)c = 0.44 A/ms,
T = 110°C
0.5
2
5
j
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
VALUE
1.50
0.95
400
(2)
ITM = 2A, tP = 380 µs
Threshold voltage
Dynamic resistance
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VTM
VTO
MAX.
MAX.
MAX.
V
(2)
(2)
RD
mΩ
5
IDRM
IRRM
VD = VDRM
µA
MAX.
VR = VRRM
500
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
TO-92
TO-92
60
150
°C/W
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
800 V
1TxxE-T
1TxxE-D
1TxxE-S
1TxxE-A
V
V
V
V
V
V
V
V
V
V
V
V
3 mA
5 mA
Standard
Standard
Standard
Standard
TO-92
TO-92
TO-92
TO-92
10 mA
25 mA
ORDERING INFORMATION
,
WEIGHT
DELIVERY MODE
MARKING
1TxxE-y
PACKAGE
ORDERING TYPE
BASE Q TY
1TxxE-y
0.2g
TO-92
500
Bag
Note: xx = voltage, y = sensitivity
www.nellsemi.com
Page 2 of 5
RoHS
1T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
-
1
T 06
E
D
Current
1 = 1A
Triac series
Voltage
06 = 600V
08 = 800V
Package type
E = TO-92
I
Sensitivity
GT
T = 3mA Standard
D = 5mA Standard
S = 10mA Standard
A = 25mA Standard
Fig.2 On-state RMS current versus lead
(TO-92) or tab (SOT-223, SMBflat-3L)
temperature (full cycle)
Fig.1 Maximum power dissipation versus
on-state RMS current (full cycle)
P (W)
I
(A)
T(RMS)
1.50
1.25
1.00
0.75
0.50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TO-92
180°
α
IT(RMS)(A)
0.25
0.00
α
Tl or Ttab(°C)
0
25
50
75
100
125
0.0 0.1 0.2 0.3 0.5 0.4 0.6 0.7
0.8 0.9 1.0
Fig.3 On-state RMS current versus ambient
temperature (free air convection full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration (Zth(j-a)).
I
(A)
K=[Z
/R
]
T(RMS)
th(j-a) th(j-a)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.00
0.10
0.01
TO-92
R
= 150°C/W
(TO-92)
th(j-a)
Tamb(°C)
tP(s)
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 1E+3
www.nellsemi.com
Page 3 of 5
RoHS
1T Series RoHS
SEMICONDUCTOR
Fig.5 Relative variation of holding current and
latching current versus junction temperature
(typ. values)
Fig.6 Relative variation of gate trigger current (lGT
)
and voltage(VGT) versus junction temperature
l
,l [T ] / l ,l [T =25°C]
l
,V [T ] / l ,V [T =25°C]
H
L
j
H
L
j
GT GT
j
GT GT
j
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
lGT Q1-Q2
lGT Q3
lGT Q4
1.5
1.0
0.5
lL
VGT Q1-Q2-Q3-Q4
lH
Tj(°C)
25 50
0.0
-50
-25
0
75
100
125
125
25
50
75
100
-50
-25
0
Fig.7 Surge peak on-state current versus
number of cycles
Fig.8 Non-repetitive surge peak on-state current
and corresponding value of l2t sinusoidal
pulse width
lTSM(A)
l
(A), l2t(A2s)
TSM
9
8
100
20
Tj initial = 25°C
dl/dt limitation:
20A/µs
t=20ms
One cycle
lTSM
7
6
Non repetitive
j
T initial=25°C
5
4
3
2
1
0
Repetitive
=95°C
T
10
1
amb
l2t
tP(ms)
Number of cycles
100 1000
1
10
0.01
0.10
1.00
10.00
Fig.10 Relative variation of critical rate of decrease
of main current versus (dV/dt)c
Fig.9 On-state characteristics (maximum values)
(lTM = f(VTM))
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
lTM(A)
2.6
10.0
1.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
Tj = Tj max.
1.0
0.8
0.6
0.4
0.2
T
= 25°C
j
Tj = max.
Vto = 0.95V
Rd = 400mΩ
S
T
D
A
(dV/dt)c (V/µs)
VTM(V)
0.0
0.1
0.1
1.0
10.0
100.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig.11 Relative variation of critical rate of decrease
of main current (dl/dt) versus junction
temperature
Fig.12 Relative variation of static dV/dt immunity
versus junction temperature (gate open)
(dl/dt)c [T ] / (dl/dt)c [T Specified]
(dV/dt)c [T ] / (dV/dt)c [T = 125°C]
j j
j
j
6
5
4
3
2
6
5
4
3
2
VD=VR=402V
1
0
1
0
Tj(°C)
Tj(°C)
75
0
25
50
75
100
125
25
50
100
125
www.nellsemi.com
Page 4 of 5
RoHS
1T Series RoHS
SEMICONDUCTOR
Case Style
TO-92
RoHS
Ø 5.20(0.205)
4.45(0.175)
5.33(0.210)
4.58(0.180)
1
2
3
0.50(0.020)
0.40(0.016)
12.70(0.500)Min.
0.50(0.020)
0.40(0.016)
0.50(0.020)
0.40(0.016)
1.40(0.055)
1.14(0.045)
1.40(0.055)
1.14(0.045)
4.20(0.165)
3.20(0.126)
www.nellsemi.com
Page 5 of 5
相关型号：
©2020 ICPDF网 联系我们和版权申明