16PTxxAI [NELLSEMI]
Stansard SCRs, 16A;
| 型号： | 16PTxxAI |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | Stansard SCRs, 16A |
| 文件： | 总6页 (文件大小：662K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
16PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 16A
Main Features
2
2
Symbol
Value
16
Unit
IT(RMS)
A
2
1
1
2
3
VDRM/VRRM
IGT
V
3
600 to 1000
25
TO-251 (I-PAK)
(16PTxxF)
TO-252 (D-PAK)
mA
(16PTxxG)
2
DESCRIPTION
The 16PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
1
2
3
1
2
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
(16PTxxAI)
(16PTxxA)
A2
2(A)
A1
A2
G
3(G)
1(K)
TO-263 (D2PAK)
(16PTxxH)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
TO-251/TO-252
TO-220AB/TO-263
Tc=110°C
Tc=86°C
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
16
A
A
TO-220AB insulated
TO-251/TO-252
TO-220AB/TO-263
Tc=110°C
Tc=86°C
Average on-state current
(180° conduction angle)
IT(AV)
10
TO-220AB insulated
F =50 Hz
t = 20 ms
190
200
180
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj = 125ºC
F = 60 Hz
dI/dt
IGM
50
4
Tp = 20 µs
Tj = 125ºC
Tj = 125ºC
Peak gate current
A
Tp =20µs
Maximum gate power
PGM
10
1
W
W
PG(AV)
Tj =125ºC
Tj =125ºC
Average gate power dissipation
Repetitive peak off-state voltage
VDRM
VRRM
Tstg
600 to 1000
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
Page 1 of 6
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RoHS
16PT Series RoHS
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
(TJ = 25 ºC unless otherwise specified)
16PTxxxx
SYMBOL
Unit
TEST CONDITIONS
Min.
Max.
Max.
2
IGT
mA
V
VD = 12V, RL = 33Ω
25
1.3
VGT
VGD
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
Tj = 125°C
Min.
0.2
V
RGK = 220Ω
IH
IL
IT = 500mA, Gate open
Max.
Min.
40
60
mA
mA
IG = 1.2×IGT
V/µs
VD = 67% VDRM Gate open
,
dV/dt
Min.
Max.
Max.
Max.
Max.
Max.
500
1.6
5
VTM
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
IT = 32A, tP = 380µs
V
µA
VD=VDRM, VR=VRRM
RGK = 220Ω
IDRM
IRRM
2
mA
V
Vto
Rd
Threshold Voltage
Dynamic Resistance
0.77
23
mΩ
THERMAL RESISTANCE
SYMBOL
Parameter
VALUE
UNIT
Rth(j-c)
Junction to case (DC)
1.1
°C/W
IPAK/DPAK/TO-220AB/TO-263
S = 1 cm2
TO-263(D2PAK)
TO-252(D-PAK)
TO-220AB
45
70
S = 0.5 cm2
Rth(j-a)
Junction to ambient
°C/W
60
TO-251(I-PAK)
100
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (xx)
800 V
PART NUMBER
PACKAGE
SENSITIVITY
1000 V
600 V
16PTxxA/16PTxxAl
16PTxxF
V
V
V
V
V
V
25 mA
25 mA
TO-220AB
I-PAK
D-PAK
D2PAK
16PTxxG
16PTxxH
V
V
V
V
V
V
25 mA
25 mA
ORDERING INFORMATION
,
WEIGHT
PACKAGE
TO-220AB
DELIVERY MODE
ORDERING TYPE
MARKING
BASE Q TY
16PTxxA
16PTxxA
2.0g
2.3g
50
50
Tube
Tube
16PTxxAI
16PTxxAI
TO-220AB (insulated)
TO-251(I-PAK)
16PTxxF
16PTxxG
16PTxxF
16PTxxG
0.40g
0.38g
80
80
Tube
Tube
TO-252(D-PAK)
TO-263(D2PAK)
16PTxxH
16PTxxH
2.0g
50
Tube
Note: xx = voltage
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Page 2 of 6
RoHS
16PT Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
16 PT 06
Current
16 = 16A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
H = TO-263 (D2PAK)
Fig.1 Maximum average power dissipation
versus average on-state current.
Fig.2 Average and D.C. on-state current
versus case temperature.
P (W)
lT(AV)(A)
18
16
16
14
12
10
8
D.C.
α=180°
TO-251/TO-252
14
12
10
8
TO-263/TO-220AB
α=180°
TO-220AB
insulated
6
6
360°
4
4
2
2
0
IT(AV)(A)
α
Tcase(°C)
0
0
2
4
6
8
10
12
0
25
50
75
100
125
Fig.3 Average and D.C. on-state current
versus ambient temperature.
Fig.4 Relative variation of thermal impedance
versus pulse duration.
(copper surface under tab: S=1cm2)
(D2PAK)
lT(AV)(A)
K=[Zth/Rth]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.00
Zth(j-c)
D.C.
0.10
α=180°
Z
th
(j-a)
Tamb(°C)
tP(s)
0.01
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Page 3 of 6
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RoHS
16PT Series RoHS
SEMICONDUCTOR
Fig.5 Relative variation of gate trigger
current, holding current and latching
current and latching current versus
junction temperature.
Fig.6 Surge peak on-state current versus
number of cycles.
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
ITSM (A)
2.5
2.0
200
180
160
tp=20ms
One cycle
l
GT
Non repetitive
140
120
100
80
T initial = 25°C
j
1.5
1.0
I
H
& I
L
Repetitive
T
= 110 °C
case
60
0.5
0.0
40
20
TJ(°C)
Number of cycles
0
-40
-20
0
20
40
60
80
100
120
140
1
10
100
1000
Fig.8 On-state characteristics (maximum
values)
Fig.7 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
values of l2t
2000
1000
200
100
Tj max.:
Vto = 0.77V
Rd = 23mΩ
Tj initial = 25°C
lTSM
Tj max
dl/dt
limitattion
l2t
10
1
100
Tj = 25°C
VTM(V)
tp(ms)
10
0.0 0.5 1.0
1.5
2.0
2.5
3.0 3.5
4.0
4.5
0.01
0.10
1.00
10.00
Fig.9 Thermal resistance junction to ambient
versus copper surface under tab
(epoxy printed circuit board Fr4,
copper thickness:35 µm)(D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
S(cm2)
10
0
0
4
8
12
16
20
24
28
32
36
40
Page 4 of 6
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RoHS
16PT Series RoHS
SEMICONDUCTOR
Case Style
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
0.62(0.024)
0.48(0.019)
5.4(0.212)
5.2(0.204)
1.37(0.054)
6.2(0.244)
6(0.236)
4T
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
RoHS
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
1
2
3
0.89(0.035)
0.62(0.024)
0.45(0.017)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
2
4.57(0.180)
(A2)
(G)3
1(A1)
Page 5 of 6
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RoHS
16PT Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
RoHS
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
2
(A2)
(G)3
1(A1)
Page 6 of 6
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