12T08A-B [NELLSEMI]
TRIACs, 12A Snubberless, Logic Level and Standard; 三端双向可控硅,12A无缓冲器,逻辑层次和水平型号: | 12T08A-B |
厂家: | NELL SEMICONDUCTOR CO., LTD |
描述: | TRIACs, 12A Snubberless, Logic Level and Standard |
文件: | 总6页 (文件大小:585K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
12T Series RoHS
SEMICONDUCTOR
TRIACs, 12A
Snubberless, Logic Level and Standard
FEATURES
Medium current triac
Low thermal resistance with clip bonding
A2
Low thermal resistance insulation ceramic
for insulated TO-220AB package
1
2
High commutation (4Q) or very high
commutation (3Q) capability
3
A1
A2
G
12T series are UL certified (File ref: E320098)
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
Packages are RoHS compliant
(12TxxA)
(12TxxAI)
A2
APPLICATIONS
ON/OFF or phase angle function in applications
such as static relays, light dimmers and appliance
motors speed controllers.
A1
A2
G
TO-263 (D2PAK)
The snubberless versions (with suffix W) are
especially recommended for use on inductive loads,
because of their high commutation performances.
The 12T series provides an insulated tab (rated at
2500VRMS).
(12TxxH)
MAIN FEATURES
SYMBOL
VALUE
UNIT
A
IT(RMS)
12
VDRM/VRRM
IGT(Q1)
V
600 to 1000
5 to 50
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 105ºC
Tc = 90ºC
t = 20 ms
t = 16.7 ms
TO-263/TO-220AB
RMS on-state current (full sine wave)
IT(RMS)
A
12
TO-220AB insulated
F =50 Hz
120
126
72
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
I2t
I2t Value for fusing
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =100 Hz
50
dI/dt
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
4
1
A
PG(AV)
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
ºC
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Page 1 of 6
RoHS
12T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
12Txxxx
QUADRANT
SYMBOL
TEST CONDITIONS
Unit
TW
SW
CW
BW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
05
10
35
50
mA
V
VD = 12 V, RL = 30Ω
VGT
1.3
0.2
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
V
(2)
IT = 500 mA
IH
mA
15
20
35
40
60
10
I - III
50
60
70
80
15
25
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
20
40
500
1000
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
6.5
2.9
-
3.5
1
(dI/dt)c(2)
MIN.
A/ms
-
Without snubber
6.5
12
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
12Txxxx
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
C
B
25
50
50
I - II - III
(1)
IGT
MAX.
mA
VD = 12 V, RL = 30Ω
IV
100
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
(2)
mA
IH
MAX.
MAX.
25
50
I - III - IV
40
50
IL
IG = 1.2 IGT
mA
80
80
II
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c = 5.3 A/ms, Tj = 125°C
V/µs
V/µs
MIN.
MIN.
200
5
400
10
(dV/dt)c(2)
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
35
(2)
ITM = 17 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
1
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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Page 2 of 6
RoHS
12T Series RoHS
SEMICONDUCTOR
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB, TO-263
TO-220AB Insulated
TO-263
1.4
2.3
45
60
Rth(j-c)
Rth(j-a)
Junction to case (AC)
°C/W
S = 1 cm2
Junction to ambient
°C/W
TO-220AB Insulated, TO-220AB
S = Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA
50 mA
25 mA
35 mA
10 mA
5 mA
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D2PAK
12TxxA-B/12TxxAl-B
12TxxA-BW/12TxxAl-BW
12TxxA-C/12TxxAl-C
Snubberless
Standard
Snubberless
Logic level
Logic level
Logic level
12TxxA-CW/12TxxAl-CW
12TxxA-SW/12TxxAl-SW
12TxxA-TW/12TxxAI-TW
10 mA
35 mA
50 mA
12TxxH-SW
12TxxH-CW
D2PAK
Snubberless
Snubberless
D2PAK
12TxxH-BW
AI: Insulated TO-220AB package
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
BASE Q TY
12TxxA-yy
12TxxA-yy
TO-220AB
50
50
50
Tube
Tube
Tube
12TxxAI-yy
12TxxAI-yy
12TxxH-yy
TO-220AB (insulated)
2.3g
TO-236(D2PAK)
12TxxH-yy
2.0g
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
-
BW
12 T 06
A
Current
12 = 12A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
H = TO-263 (D2PAK)
I
Sensitivity
GT
B = 50mA Standard
C = 25mA Standard
SW = 10mA Logic Level
BW = 50mA Snubberless
CW = 35mA Snubberless
TW = 5mA Logic Level
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Page 3 of 6
RoHS
12T Series RoHS
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
P (W)
IT(RMS) (A)
14
13
12
16
14
12
10
8
11
10
9
TO-220AB
(insulated)
8
7
6
5
4
6
TO-220AB
TO-263
4
3
2
1
0
2
0
IT(RMS)(A)
TC(°C)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10 11 12
Fig.3 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
IT(RMS) (A)
1E+0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Zth(j-c)
D2PAK
(S=1cm2)
Zth(j-a)
1E-1
1E-2
tp(s)
Tc(°C)
50
0
25
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.6 Surge peak on-state current versus number
of cycles.
Fig.5 On-state characteristics (maximum values).
ITSM (A)
I
(A)
130
100
10
1
T max.
120
110
100
90
j
V
to
= 0.85 V
= 35 mΩ
t=20ms
R
d
Non repetitive
T initial=25°C
One cycle
j
80
T =T max
j
j
70
60
50
40
30
20
10
0
T =25°C
j
Repetitive
T =90°C
c
Number of cycles
VTM(V)
1
10
100
1000
0.5 1.0
1.5
2.0 2.5
3.0
3.5
4.0
4.5 5.0
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Page 4 of 6
RoHS
12T Series RoHS
SEMICONDUCTOR
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.5
2.0
1.5
1.0
0.5
0.0
dI/dt limitation:
50A/µs
Tj initial=25°C
1000
IGT
ITSM
IH & IL
I2t
100
10
Tj(°C)
tp (ms)
-40
-20
0
20
40
60
80
100
120 140
0.01
0.10
1.00
10.00
Fig.10 Relative variation of critical rate of
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
decrease of main current versus (dV/dt)c
(typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0
3.5
3.0
2.8
2.4
TW
2.0
SW
C
1.6
1.2
0.8
0.4
0.0
B
2.5
2.0
1.5
1.0
CW/BW
(dV/dt)c (V/µs)
0.5
0.0
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
Fig.12 D2PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
Fig.11 Relative variation of critical rate of decrease
of main current versus junction temperature
(dI/dt)c [Tj] (dl/dt)c [Tj specified ]
Rth(j-a)(°C/W)
80
70
60
50
40
6
5
4
D2PAK
3
2
30
20
10
0
1
S(cm2)
Tj(°C)
0
4
8
12
16
20
24
28
32
36
40
0
0
25
50
75
100
125
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Page 5 of 6
RoHS
12T Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
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Page 6 of 6
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