UPD166007T1F [NEC]
Buffer/Inverter Based Peripheral Driver, 130A, TO-252, 5 PIN;
| 型号： | UPD166007T1F |
| 厂家： | 
NEC |
| 描述： | Buffer/Inverter Based Peripheral Driver, 130A, TO-252, 5 PIN 驱动 接口集成电路 |
| 文件： | 总24页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS INTEGRATED CIRCUIT
μPD166007
SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE
GENERAL DESCRIPTION
The μPD166007 device is an N-channel high-side switch with charge pump, current controlled input, diagnostic
feedback with load current sense and embedded protection functions.
FEATURES
PACKAGE DRAWING (unit: mm)
•
•
•
Built-in charge pump
6.5 0.2
5.0 TYP
4.3 MIN
2.3 0.1
Low on-state resistance
0.5 0.1
Short-circuit protection
6
- Shutdown by short-circuit detection
Over-temperature protection
•
- Shutdown with auto-restart on cooling
Small multi-chip package: JEDEC 5-PIN TO-252
Built-in diagnostic function
1
2
3
4
5
•
•
0 to 0.25
0.6 0.1
1.14
- Proportional load current sensing
- Defined fault signal in case of thermal shutdown and/or
short circuit shutdown
1.14
0.508
NOTE
1.
No Plating area
ORDERING INFORMATION
Part Number
Package
Quality Grade
Special
μPD166007T1F
5-PIN TO-252(MP-3ZK)
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
BLOCK DIAGRAM
3&Tab
ICC
VCC
Dynamic
clamp
Voltage sensor
+
VON
Charge
pump
Control
logic
Internal power
supply
Current
detector
1&5
ESD
Output voltage
sensor
IN
2
OUT
IS
IL
4
Temperature
sensor
Current sense
ESD
VOUT
IIN
IIS
VI
RIS
VIN
Load
Load GND
Logic GND
Logic GND
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S18529EJ2V0DS00 (2nd edition)
Date Published April 2007 CP(K)
Printed in Japan
©NEC Electronics Corporation 2006
μPD166007
APPLICATION
•
•
•
Light bulb (to 55W) switching
Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Replacement for fuse and relay
PIN CONFIGURATION
Tab
Pin No.
Terminal Name
Function
1
OUT
IN
Output to load; pin 1 and 5 must be externally shorted.
Input; activates the power switch, if shorted to ground.
Supply Voltage; tab and pin 3 are internally shorted.
Sense Output; diagnostic feedback NOTE
2
3/Tab
4
1
4 5
2 3
VCC
IS
5
OUT
Output to load; pin 1 and 5 must be externally shorted.
NOTE: If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor.
ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified)
Parameter
VCC voltage
Symbol
Test Conditions
Rating
28
Unit
V
VCC1
VCC voltage for full short circuit VCC2
protection
18
36
V
V
RI = 1 Ω, RL = 1.5 Ω, td = 400 ms,
RIS = 1 kΩ, IN = low or high
DC, Tc = 25°C
VCC voltage (Load Dump)
VCC3
Load current
IL
30
A
A
Load current (short circuit
current)
IL(SC)
Self Limited
Tc = 25°C
Power dissipation
PD
59
–40 to +150
–55 to +150
2.0
W
°C
°C
Channel temperature
Storage temperature
Tch
Tstg
VESD
Electric discharge capability
(Human Body Model)
IN, IS
kV
kV
V
R = 1.5 kΩ, C = 100pF
4.0
OUT
Voltage of IN pin (DC)
Voltage of IS pin (DC)
VIN
VIS
VCC=14V
VCC=14V
VCC+14 V, VCC–28 V
VCC+14 V, VCC–28 V
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
Tch = –40 to 150°C
Min.
8
Typ.
Max.
18
Unit
V
Power supply voltage
VCC
2
Data Sheet S18529EJ2V0DS
μPD166007
THERMAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min.
Typ.
45
Max.
55
Unit
Thermal Resistance
Rth(ch-a)
Device on 50 mm × 50 mm × 1.5 mm
epoxy PCB FR4 with 6 cm2 of 70 um
copper area
°C/W
ELECTRICAL CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Tch = –40 to 150°C
Min.
Typ.
Max.
Unit
mA
Required current capability of
Input switch
IIH
0.7
2.2
μA
μA
μA
Input current for turn-off
Standby Current
IIL
10
6
Tch = 25°C
ICC(off)
Iin = 0 A
4
Tch = –40 to 150°C
Tch = 25°C
4
15
On State Resistance
Ron
IL = 7.5 A
8
10
mΩ
Tch = 150°C
14
18
RL = 2.2 Ω,
μs
μs
μs
μs
Turn On Time
Turn Off Time
Rise time
Ton
200
250
150
100
400
700
300
500
Tch = –40 to 150°C
refer to page 15
Toff
Tr
Fall time
Tf
25 to 50% VOUT, RL=2.2 Ω,
Slew rate on
dV/dton
V/μs
V/μs
0.2
0.2
0.6
0.5
Tch = –40 to 150°C, refer to page 15
50 to 25% VOUT, RL=2.2 Ω,
Slew rate off
-dV/dtoff
Tch = –40 to 150°C, refer to page 15
3
Data Sheet S18529EJ2V0DS
μPD166007
PROTECTION FUNCTIONS (VCC = 12 V, Tch = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
VCC = –12 V, IL = –7.5 A, RIS = 1 kΩ
Tch = 25°C
Min.
Typ.
Max.
Unit
Output voltage drop at reverse
battery conditonNote
Vds(rev)
0.8
0.6
50
0.84
0.63
120
V
V
A
Tch = 150°C
Note
Note
IL6, 3(SC)
IL6, 6(SC)
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Short circuit detection current
VCC–VIN = 6 V,
Von = 3 V
50
20
10
45
VCC–VIN = 6 V,
Von = 6 V
35
110
180
160
120
200
170
120
90
35
35
IL12, 3(SC)
IL12, 6(SC)
VCC–VIN = 12 V,
Von = 3 V
110
105
95
76
50
Note
VCC–VIN = 12 V,
Von = 6 V
90
85
40
10
60
50
30
80
Note
IL12, 12(SC)
VCC–VIN = 12 V,
Von = 12 V
55
50
45
Note
IL18, 3(SC)
IL18, 6(SC)
VCC–VIN = 18 V,
Von = 3 V
130
125
110
110
110
100
75
Note
VCC–VIN = 18 V,
Von = 6 V
Note
IL18, 12(SC)
IL18, 18(SC)
Von(CL)
VCC–VIN = 18 V,
Von = 12 V
70
65
Note
VCC–VIN = 18 V,
Von = 18 V
50
50
5
45
Output clamp voltage
IL = 40 mA
30
34
40
V
(inductive load switch off)
Over load detection voltage
Tch = –40 to 150°C
Tch = –40 to 150°C
VON(OvL)
td(OC)
0.65
0.8
1
1.45
3.5
V
Turn-on check delay after input
current positive slope
1.9
ms
°C
°C
Thermal shutdown temperature
Thermal hysteresis
Tth
150
175
10
ΔTth
Note Not subject to production test, specified by design.
4
Data Sheet S18529EJ2V0DS
μPD166007
DIAGNOSTIC CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Current sense ratio
KILIS
KILIS = IL/IIS
VIS < VOUT – 6 V, IIS < IIS,lim
Tch = –40°C
IL = 30 A
IL = 7.5 A
8300
8300
8300
7500
8000
8200
6100
6500
7600
0
9350
9400
9450
9400
9500
9550
9600
9600
9600
11000
10600
10000
11400
10800
10200
14200
12800
11500
60
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
Tch = –40°C
Tch = 25°C
Tch = 150°C
IL = 2.5 A
μA
Sense current offset current
IIS,offset
IIS,fault
VIN = 0 V, IL = 0 A
Sense current under fault
condition
Under fault conditions
8 V < Vcc – VIS < 12 V,
Tch = –40 to 150°C
3.5
3.5
6.0
7.0
12.0
12.0
mA
Sense current saturation
current
IIS,lim
Vis < Vout – 6 V,
mA
Tch = –40 to 150°C
Tch = –40 to 150°C
Fault sense signal delay after
short circuit detectionNote
tsdelay(fault)
μs
2
6
μA
Sense current leakage current
IIS(LL)
IIN = 0 A
0.1
0.5
Current sense settling time
after input current positive
slopeNote
tson(IS)
Tch = –40 to
IL = 0 A 20 A
150°C
μs
μs
250
50
1000
100
Current sense settling time
during on conditionNote
Tsic(IS)
IL = 10 A 20 A
Note Not subject to production test, specified by design.
5
Data Sheet S18529EJ2V0DS
μPD166007
FEATURES DESCLIPTION
Driver Circuit (On-Off Control)
The high-side output is turned on, if the input pin is shorted to ground. The input current is below IIH. The high-side
output is turned off, if the input pin is open or the input current is below IIL. Rin0 is 130 Ω typ. ESD protection diode:
46 V typ.
VCC
IIN
VZ,IN
0
Logic
VOUT
ZD
Rin0
IN
VCC
IIN
OFF
ON
OFF
ON
0
t
Switching a resistive load
Switching lamps
IIN
IIN
0
0
IL
IL
0
0
VOUT
VOUT
Vcc
0
0
IIS
IIS
IIS,lim
t
t
0
0
6
Data Sheet S18529EJ2V0DS
μPD166007
Switching an inductive load
IIN
Vcc
0
IL
SW1
0
IS
ESD
VOUT
Ris
VCC
Control
Logic
0
OUT
Von(CL)
IIS
0
t
Dynamic clamp operation at inductive load switch off
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND because the IS terminal is
connected to GND via an external resister. Next, the voltage at the source of SW1 (= gate of output MOS) falls below
the GND voltage.
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp
circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit
is not activated.
7
Data Sheet S18529EJ2V0DS
μPD166007
Short circuit protection
Case 1: IN pin is shorted to ground in an overload condition, which includes a short circuit condition.
The device shuts down automatically when either or both of following conditions (a, b) is detected. The sense
current is fixed at IIS,fault. Shutdown is latched until the next reset via input.
(a) IL > IL(sc)
(b) Von>Von(OvL) after td(OC)
Case1-(a) IL > IL(sc)
IIN
Short circuit detection
0
IL(SC)
IL
(Evaluation circuit)
0
Vcc
VOUT /Vcc
VBAT
Von
Vcc
OUT
IS
IIN
IIS
IN
VON
VOUT
VBAT
RIS
IL
VOUT
VIN
VIS
0
RL
tsdelay(fault)
: Cable impedance
IIS
0
IIS,fault
t
tsdelay(fault): Fault sense signal delay after short circuit detection
IL(SC): Short circuit detection current
Depending on the external impedance
Typical Short circuit detection current characteristics
The short circuit detection current changes according VCC voltage and Von voltage for the purpose of to be
strength of the robustness under short circuit condition.
I
L(SC) VS. VCC-VIN
150
120
90
60
30
0
IL(SC) [A]
160
Von=3V
140
120
100
80
Von=6V
Von=12V
V
CC-V =18V
IN
60
40
VCC-V =12V
IN
20
V
CC-V =6V
IN
0
0
Von [V]
5
10
15
20
5
10
15
20
VCC-V [V]
IN
8
Data Sheet S18529EJ2V0DS
μPD166007
Case1-(b) Von>Von(OvL) after td(OC)
Short circuit detection
IIN
(Evaluation circuit)
0
IL
IL(SC)
Vcc
Von
0
OUT
IS
IIN
IIS
IN
VOUT /Vcc
VBAT
VOUT
Vcc
VBAT
RIS
IL
VIN
VIS
Von(OvL)
RL
VON
VOUT
0
: Cable impedance
td(oc)
IIS
0
td(oc): Turn-on check delay after input current positive slope
IIS,fault
t
Depending on the external impedance
9
Data Sheet S18529EJ2V0DS
μPD166007
Case 2: Short circuit during on-condition
The device shuts down automatically when either or both of following conditions (a, b) is detected. The sense
current is fixed at IIS,fault. Shutdown is latched until the next reset via input.
(a) IL > IL(sc)
(b) Von>Von(OvL) after td(oc)
Case2-(a) IL > IL(sc)
IIN
Short circuit detection
(Evaluation circuit)
0
IL
IL(SC)
Vcc
Von
OUT
IS
0
IIN
IIS
VOUT
Vcc
IN
VOUT
VBAT
RIS
IL
VIN
VIS
RL
0
: Cable impedance
tsdelay(fault)
IIS,fault
IIS
tsdelay(fault): Fault sense signal delay after short circuit detection
IL(SC): short circuit detection current
0
t
Depending on the external impedance
10
Data Sheet S18529EJ2V0DS
μPD166007
Case2-(b) Von>Von(OvL) after td(OC)
IIN
Short circuit detection
0
IL(SC)
IL
0
VOUT/Vcc
Vcc
VBAT
1V(typ)
VOUT
0
tsdelay(fault)
IIS,fault
td(oc)
IIS
t
0
Depending on the external impedance
td(oc): Turn-on check delay after input current positive slope
tsdelay(fault): Fault sense signal delay after short circuit detection
IL(SC): Short circuit detection current
(Evaluation circuit)
Vcc
Von
OUT
IS
IIN
IIS
IN
VOUT
VBAT
RIS
IL
VIN
VIS
RL
: Cable impedance
11
Data Sheet S18529EJ2V0DS
μPD166007
Over-temperature protection
The output is switched off if over-temperature is detected. The device switches on again after it cools down.
IIN
0
Tch
Tth
ΔTth
VOUT
0
IIS
IIS,fault
t
0
Power dissipation under reverse battery condition
In the case of a reverse battery condition, the intrinsic body diode causes power dissipation. Additional power is
dissipated by the internal resister. The following is the formula for estimation of total power dissipation Pd(rev) in a
reverse battery condition.
Pd(rev) = Vds(rev) × IL + (Vcc – Vf – Iin(rev) × Rin) × Iin(rev) + (Vcc – Iis(rev) × Ris) × Iis(rev)
Iin(rev) = (Vcc – ( Vf +Vf,IN)) / (Rin0 + Rin)
Iis(rev) = (Vcc – Vf,IS) / (Ris0 + Ris)
Vf,IN: Forward voltage of Vz,IN
Vf,IS: Forward voltage of Vz,IS
Vf: Forward voltage of parasitic diode of external input switch
The reverse current through the intrinsic body diode has to be limited by the connected load. The current through
sense pin IN is limited by Rin0 130ohm typ.. (Please refer to Current sense output). The current through input pin
IS is limited by Ris0 130ohm typ. and external Ris. (Please refer to Driver Circuit (On-Off Control) ).
12
Data Sheet S18529EJ2V0DS
μPD166007
Device behavior at low voltage condition
If the voltage supply goes down, the device cannot keep a fully ON state under 4.6V(typ), and Von voltage is going
to increase. Then, if Von voltage goes over Von(OvL), the device shuts down the output. Shutdown is latched until the
next reset via input. Shutdown does not work during td(oc) after input is active. VON(OvL) goes down under 4.6V.
IIN
0
IL
0
VOUT/Vcc
Vcc
VBAT
VOUT
Von(OvL)
0
t
td(oc)
Over load detection voltage characteristics under low voltage supply condition
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
Voltage supply Vcc - VIN [V]
13
Data Sheet S18529EJ2V0DS
μPD166007
Current sense output
VCC
Ris0 is 130 Ω typ. Vz,IS = 46 V (typ.), RIS = 1 kΩ nominal.
IS can be only driven by the internal circuit as long as Vis
< Vout–6 V. Ris should be less than 20 kΩ for any
application. Even If current sense and diagnostic features
are not used, Ris has to be connected.
VZ,IS
ZD
IS
IIS
Ris0
Note For large values of RIS, VIS can almost reach Vcc.
Ris
IIS
IIS,lim
KILIS=IL/IIS
VIS<Vout-6V, IIS<IIS,lim
IIS,offset
IL
IL,lim
Current sense ratio
16000
14000
12000
10000
8000
Tch = -40degreeC
Tch = 150degreeC
6000
4000
0
5
10
15
20
IL[A]
25
30
35
Load Current
14
Data Sheet S18529EJ2V0DS
μPD166007
Measurement condition
Switching waveform of OUT Terminal
IIN
ton
toff
tr
tf
90%
90%
50%
50%
25%
VOUT
dV/dton
-dV/dtoff
25%
10%
10%
Switching waveform of IS terminal
IIN
tson(IS)
tSIC(IS)
tSIC(IS)
IIS
15
Data Sheet S18529EJ2V0DS
μPD166007
Truth table
Input Current
State
Output
OFF
ON
Sense Current
0 mA (IIS(LL))
Nominal
IIS,fault
L
–
Normal Operation
H
Over-temperature or Short circuit
Open Load
OFF
ON
IIS,offset
Application example in principle
5V
Vbat
1)
UPD166007
R
Micro.
VCC
2)
IN
OUT
OUT
OUTPUT PORT
R
3)
R
IS
Load
ADC PORT
GND
R
Ris
1) In order to prevent leakage current through at IN terminal via PCB,
it is recommended to pull up the IN terminal to VCC using around 1 to10kΩ (approx.) resistor.
2) If output current is over destruction current characteristics for inductive load at a single off,
it must be connected through an external component for protection purpose.
3) If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor.
16
Data Sheet S18529EJ2V0DS
μPD166007
TYPICAL CHARACTERISTICS
INPUT CURRENT FOR TURN OFF VS.
AMBIENT TEMPERATURE
REQUIRED CURRENT CAPABIRITY OF INPUT SWITCH
VS. AMBIENT TEMPERATURE
120
100
80
60
40
20
0
3
2.5
2
1.5
1
0.5
0
Vcc=12V
150 200
Vcc=12V
200
-50
0
50
100
150
-50
0
50
100
Ambient Temperature Ta[degreeC]
Ambient Temperature Ta[degreeC]
STANDBY CURRENT VS. AMBIENT TEMPERATURE
20
18
16
14
12
10
8
6
4
Vcc=12V
IIN=0A
2
0
-50
0
50
100
150
200
Ambient Temperature Ta[degreeC]
TURN OFF TIME VS. AMBIENT TEMPERATURE
TURN ON TIME VS. AMBIENT TEMPERATURE
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
Vcc=18V
Vcc=12V
Vcc=6V
Vcc=6V
Vcc=12V
Vcc=18V
RL=2.2ohm
RL=2.2ohm
-50
0
50
100
150
200
-50
0
50
100
150
200
Ambient Temperature Ta[degreeC]
Ambient Temperature Ta[degreeC]
17
Data Sheet S18529EJ2V0DS
μPD166007
FALL TIME VS. AMBIENT TEMPERATURE
RISE TIME VS. AMBIENT TEMPERATURE
600
500
400
300
200
100
0
600
500
400
300
200
100
0
Vcc=6V
Vcc=18V
Vcc=12V
Vcc=18V
Vcc=12V
Vcc=6V
RL=2.2ohm
RL=2.2ohm
-50
0
50
100
150
200
-50
0
50
100
150
200
Ambient Temperature Ta[degreeC]
Ambient Temperature Ta[deg]
OUTPUT CLAMP VOLTAGE (INDUCTIVE LOAD SWITCH OFF)
VS. AMBIENT TEMPERATURE
SENSE CURRENT OFFSET CURRENT
VS. AMBIENT TEMPERATURE
40
38
36
34
32
30
80
60
40
20
0
-20
-40
-60
-80
Vcc=12V
IL=40mA
-50
0
50
100
150
200
-50
0
50
100
150
200
Ambient Temperature Ta[degreeC]
Ambient Temperature Ta[degreeC]
SENSE CURRENT LEAKAGE CURRENT VS.
AMBIENT TEMPERATURE
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
Vcc=12V
Iin=0A
-50
0
50
100
150
200
Ambient Temperature Ta[degreeC]
18
Data Sheet S18529EJ2V0DS
μPD166007
SENSE CURRENT UNDER FAULT CONDITION
VS. AMBIENT TEMPERATURE
SENSE CURRENT SATURATION CURRENT
VS. AMBIENT TEMPERATURE
14
12
10
8
14
12
10
8
Vcc-Vis=12V
Vcc-Vis=8V
6
6
4
4
2
2
Vis<VOUT-6V
0
0
-50
0
50
100
150
200
-50
0
50
100
150
200
Ambient Temperature Ta[degreeC]
Ambient Temperature Ta[degreeC]
ON STATE RESISTANCE VS. AMBIENT TEMPERATURE
ON STATE RESISTENCE VS. VCC - VIN VOLTAGE
20
12
18
16
14
12
10
8
10
8
6
4
6
4
2
2
Tch=25degreeC
0
0
-50
0
50
100
150
200
0
5
10
15
20
Ambient Temperature Ta[degreeC]
VCC-VIN Voltage[V]
SLEW RATE VS. AMBIENT TEMPERATURE
0.45
0.4
0.35
0.3
-dV/dtoff
dV/dton
0.25
0.2
0.15
0.1
0.05
0
-50
0
50
100
150
200
Ambient Tempereture Ta[degreeC]
19
Data Sheet S18529EJ2V0DS
μPD166007
THERMAL CHARACTERISTICS
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-a)=55.0degreeC/W
Rth(ch-c)=3.17degreeC/W
1
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width (s)
MAXIMUM ALLOWABLE LOAD INDUCTANCE FOR A SINGLE SWITCH OFF
Destruction current characteristics for inductive load at a single switch off
100
Tch=150degreeC, VCC=12V
10
L[mH]
1
0.1
0.01
1
10
100
IAS[A]
20
Data Sheet S18529EJ2V0DS
μPD166007
REVISION HISTORY
Revision
Major changes since last version
Released 1st edition November 2006
Released 2nd edition April 2007
Page
1st edition
Revised ton, tr characteristics
3
3
Add dV/dton, -dV/dtoff characteristics
Add VON(OvL) characteristics
4
Add td(OC) characteristics
4
Add explanation device behavior at switching a inductive load
Add Short circuit protection Case 1-(b)
Add Short circuit protection Case 2-(b)
Add explanation device behavior at low voltage condition
Revised Measurement condition waveform
Revised application example in principle
Add maximum allowable load inductance for a single switch off
7
2nd edition
9
11
13
15
16
20
21
Data Sheet S18529EJ2V0DS
μPD166007
[MEMO]
22
Data Sheet S18529EJ2V0DS
μPD166007
NOTES FOR CMOS DEVICES
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
1
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,
and also in the transition period when the input level passes through the area between VIL (MAX) and
V
IH (MIN).
HANDLING OF UNUSED INPUT PINS
2
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND
via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must
be judged separately for each device and according to related specifications governing the device.
3
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred. Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded. The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
4
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
5
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
6
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
23
Data Sheet S18529EJ2V0DS
μPD166007
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M8E 02. 11-1
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