UPA811T-FB [NEC]
RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6;
| 型号： | UPA811T-FB |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6 |
| 文件： | 总6页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
µPA811T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD
The µPA811T has built-in 2 low-voltage transistors which are designed to
PACKAGE DRAWINGS
amplify low noise in the VHF band to the UHF band.
(Unit: m m )
2.1±0.1
FEATURES
1.25±0.1
•
Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
•
High Gain
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
A Small Mini Mold Package Adopted
Built-in 2 Transistors (2 × 2SC4228)
•
•
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA811T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA811T-T1
Taping products
(3 KPCS/Reel)
PIN CONFIGURATION (Top View)
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
6
5
2
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Q
1
Q
2
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
20
UNIT
V
1
3
10
V
1.5
V
35
mA
mW
PIN CONNECTIONS
1. Collector (Q1)
2. Base (Q2)
4. Emitter (Q2)
5. Emitter (Q1)
6. Base (Q1)
Total Power Dissipation
PT
150 in 1 element
200 in 2 elements
Note
3. Collector (Q2)
Junction Temperature
Storage Temperature
Tj
150
˚C
˚C
Tstg
–65 to +150
Note 110 mW must not be exceeded in 1 element.
The inform ation in this docum ent is subject to change w ithout notice.
Document No. P11464EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
©
µPA811T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
ICBO
IEBO
CONDITION
VCB = 10 V, IE = 0
MIN.
TYP.
MAX.
1.0
UNIT
µA
VEB = 1 V, IC = 0
1.0
µA
hFE
VCE = 3 V, IC = 5 mANote 1
VCE = 3 V, IC = 5 mA
80
200
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
fT
5.5
8.0
GHz
pF
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
0.7
3.2
2
|S21e|
5.5
7.5
1.9
dB
NF
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 5 mA
0.85
A smaller value among hFE of hFE1 = Q1, Q2
A Larger value among hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
44R
GB
45R
Marking
hFE Value
80 to 160
125 to 250
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT - TA Characteristics
IC - VCE Characteristics
25
20
15
10
5
Free Air
µ
200
100
µ
µ
µ
µ
µ
40µA
IB = 20µA
0
50
100
150
0
5
1.0
Ambient Temperature T
A
(°C)
Collector to Emitter Voltage VCE (V)
I
C
- VBE Characteristics
hFE - IC Characteristics
20
200
100
50
V
CE = 3 V
VCE = 3 V
10
20
10
0.5
1
5
10
50
0
0.5
Base to Emitter Voltage VBE (V)
1.0
Collector Current I
C
(mA)
2
µPA811T
Cre - VCB Characteristics
fT - IC Characteristics
5.0
10
8
V
CE = 3 V
f = 1 MHz
f = 2 GHz
2.0
1.0
0.5
6
4
2
0
0.2
0.1
1
2
5
10
20
50
50
50
0.5
1
5
10
(mA)
50
Collector to Base Voltage VCB (V)
Collector Current I
C
l S21e l 2 - I
C
Characteristics
| S21e |
2 - f Characteristics
12
8
25
20
15
10
V
CE = 3 V
V
CE = 3 V
f = 2 GHz
IC = 5 mA
4
0
5
0
0.5
1
5
10
0.1
0.5
1.0
2.0
5.0
Collector Current I (mA)
C
Frequency f (GHz)
NF - IC Characteristics
5
V
CE = 3 V
f = 2 GHz
4
3
2
1
0
0.5
1
5
10
(mA)
Collector Current I
C
3
µPA811T
S-PARAMETERS
VCE = 3 V, IC = 1 mA
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
0.969
0.957
0.909
0.909
0.895
0.876
0.821
0.750
0.710
0.673
0.658
0.625
0.573
0.537
0.505
0.479
0.448
0.424
0.399
0.389
–7.9
–14.7
–21.2
–27.4
–33.5
–42.4
–49.4
–56.0
–60.5
–65.3
–72.2
–78.4
–85.4
–91.2
–97.1
–103.2
–110.2
–115.4
–120.9
–127.2
3.625
3.405
3.366
3.218
3.147
3.150
3.040
2.966
2.779
2.640
2.532
2.504
2.427
2.350
2.305
2.210
2.152
2.101
2.034
1.987
172.0
165.9
156.4
153.3
144.8
141.2
132.0
126.2
119.6
114.1
110.6
105.6
102.7
96.2
0.016
0.031
0.046
0.059
0.071
0.083
0.092
0.105
0.110
0.119
0.124
0.129
0.138
0.137
0.143
0.142
0.148
0.155
0.157
0.165
85.0
80.7
73.3
70.9
66.4
65.6
60.7
58.0
55.8
51.5
51.0
48.2
46.2
44.5
42.0
43.8
41.9
42.9
40.4
38.1
0.999
0.989
0.961
0.955
0.913
0.913
0.896
0.888
0.869
0.840
0.805
0.758
0.738
0.706
0.709
0.693
0.689
0.678
0.650
0.631
–3.6
–6.4
300.00
–10.4
–12.4
–14.2
–16.7
–18.0
–21.1
–23.3
–27.3
–28.9
–30.8
–31.1
–31.5
–32.1
–32.6
–35.3
–36.5
–39.1
–40.5
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
92.3
88.3
83.6
81.0
75.9
71.7
VCE = 3 V, IC = 3 mA
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
0.903
0.856
0.763
0.713
0.656
0.602
0.536
0.466
0.412
0.374
0.346
0.315
0.285
0.263
0.245
0.230
0.214
0.202
0.192
0.193
–14.0
–25.6
8.928
8.248
7.535
6.882
6.233
5.854
5.342
4.989
4.471
4.123
3.871
3.667
3.575
3.367
3.214
3.038
2.918
2.821
2.696
2.613
165.7
154.2
141.5
135.1
125.9
121.4
112.1
106.9
100.4
95.3
0.016
0.028
0.042
0.051
0.058
0.067
0.072
0.080
0.084
0.091
0.095
0.100
0.108
0.111
0.118
0.121
0.129
0.137
0.143
0.152
89.5
74.6
68.0
65.0
61.2
61.4
58.8
57.9
58.0
55.7
56.9
55.9
55.8
55.6
54.5
57.3
55.9
57.2
54.8
53.2
0.985
0.951
0.889
0.851
0.785
0.764
0.733
0.717
0.696
0.669
0.639
0.603
0.587
0.566
0.570
0.561
0.559
0.553
0.532
0.515
–6.5
–11.2
–16.4
–18.6
–20.1
–21.7
–21.9
–23.8
–25.0
–27.6
–28.3
–29.2
–28.7
–28.3
–28.2
–28.3
–30.5
–31.5
–33.7
–34.7
300.00
–36.2
400.00
–44.7
500.00
–52.3
600.00
–62.4
700.00
–70.5
800.00
–77.7
900.00
–82.8
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
–87.8
–93.4
92.3
–100.2
–106.7
–112.8
–119.7
–126.7
–135.0
–141.2
–147.9
–154.2
88.1
86.0
81.3
78.3
75.5
72.3
69.9
65.8
61.8
4
µPA811T
S-PARAMETERS
VCE = 3 V, IC = 5 mA
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
0.848
0.766
0.647
0.575
0.506
0.450
0.393
0.335
0.290
0.260
0.236
0.213
0.193
0.178
0.168
0.161
0.153
0.148
0.143
0.149
–18.5
–33.1
12.800
11.314
9.862
8.611
7.527
6.847
6.116
5.624
4.970
4.521
4.202
3.947
3.792
3.468
3.408
3.218
3.085
2.980
2.840
2.752
161.3
146.2
132.5
125.0
116.3
112.2
103.6
99.2
0.015
0.026
0.038
0.044
0.052
0.058
0.064
0.072
0.076
0.084
0.088
0.094
0.102
0.106
0.115
0.118
0.128
0.137
0.143
0.153
78.5
71.6
66.4
64.0
62.0
63.0
61.6
61.8
62.4
60.4
62.0
61.2
61.3
61.1
60.2
62.3
60.8
61.9
59.4
57.6
0.974
0.913
0.829
0.778
0.712
0.691
0.666
0.652
0.637
0.616
0.592
0.561
0.550
0.532
0.538
0.533
0.532
0.527
0.507
0.492
–8.3
–14.0
–19.0
–20.4
–20.9
–21.5
–21.0
–22.2
–23.1
–25.3
–25.7
–26.4
–25.7
–25.1
–25.1
–25.2
–27.5
–28.5
–30.7
–31.8
300.00
–45.5
400.00
–54.3
500.00
–62.0
600.00
–71.5
700.00
–79.6
800.00
–86.5
900.00
–91.7
93.3
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
–97.0
88.7
–102.5
–109.7
–116.7
–123.3
–131.8
–139.7
–149.2
–156.1
–163.5
–169.9
86.2
82.4
80.3
76.1
73.8
71.4
68.7
66.4
62.7
58.8
5
µPA811T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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