UPA811T-FB [NEC]

RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6;
UPA811T-FB
型号: UPA811T-FB
厂家: NEC    NEC
描述:

RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

文件: 总6页 (文件大小:43K)
中文:  中文翻译
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DATA SHEET  
SILICON TRANSISTOR  
µPA811T  
HIGH-FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
(WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD  
The µPA811T has built-in 2 low-voltage transistors which are designed to  
PACKAGE DRAWINGS  
amplify low noise in the VHF band to the UHF band.  
(Unit: m m )  
2.1±0.1  
FEATURES  
1.25±0.1  
Low Noise  
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA  
High Gain  
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA  
A Small Mini Mold Package Adopted  
Built-in 2 Transistors (2 × 2SC4228)  
ORDERING INFORMATION  
PART NUMBER  
QUANTITY  
PACKING STYLE  
µPA811T  
Loose products  
(50 PCS)  
Embossed tape 8 mm wide. Pin 6 (Q1  
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)  
face to perforation side of the tape.  
µPA811T-T1  
Taping products  
(3 KPCS/Reel)  
PIN CONFIGURATION (Top View)  
Remark If you require an evaluation sample, please contact an NEC Sales  
Representative. (Unit sample quantity is 50 pcs.)  
6
5
2
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Q
1
Q
2
PARAMETER  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
20  
UNIT  
V
1
3
10  
V
1.5  
V
35  
mA  
mW  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Base (Q2)  
4. Emitter (Q2)  
5. Emitter (Q1)  
6. Base (Q1)  
Total Power Dissipation  
PT  
150 in 1 element  
200 in 2 elements  
Note  
3. Collector (Q2)  
Junction Temperature  
Storage Temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–65 to +150  
Note 110 mW must not be exceeded in 1 element.  
The inform ation in this docum ent is subject to change w ithout notice.  
Document No. P11464EJ1V0DS00 (1st edition)  
Date Published June 1996 P  
Printed in Japan  
1996  
©
µPA811T  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PARAMETER  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
SYMBOL  
ICBO  
IEBO  
CONDITION  
VCB = 10 V, IE = 0  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
µA  
VEB = 1 V, IC = 0  
1.0  
µA  
hFE  
VCE = 3 V, IC = 5 mANote 1  
VCE = 3 V, IC = 5 mA  
80  
200  
Gain Bandwidth Product  
Feed-back Capacitance  
Insertion Power Gain  
Noise Figure  
fT  
5.5  
8.0  
GHz  
pF  
Cre  
VCB = 3 V, IE = 0, f = 1 MHzNote 2  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
VCE = 3 V, IC = 5 mA, f = 2 GHz  
0.7  
3.2  
2
|S21e|  
5.5  
7.5  
1.9  
dB  
NF  
dB  
hFE Ratio  
hFE1/hFE2  
VCE = 3 V, IC = 5 mA  
0.85  
A smaller value among hFE of hFE1 = Q1, Q2  
A Larger value among hFE of hFE2 = Q1, Q2  
Notes 1. Pulse Measurement: Pw 350 µs, Duty cycle 2 %  
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.  
hFE CLASSIFICATION  
Rank  
FB  
44R  
GB  
45R  
Marking  
hFE Value  
80 to 160  
125 to 250  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
PT - TA Characteristics  
IC - VCE Characteristics  
25  
20  
15  
10  
5
Free Air  
µ
200  
100  
µ
µ
µ
µ
µ
40µA  
IB = 20µA  
0
50  
100  
150  
0
5
1.0  
Ambient Temperature T  
A
(°C)  
Collector to Emitter Voltage VCE (V)  
I
C
- VBE Characteristics  
hFE - IC Characteristics  
20  
200  
100  
50  
V
CE = 3 V  
VCE = 3 V  
10  
20  
10  
0.5  
1
5
10  
50  
0
0.5  
Base to Emitter Voltage VBE (V)  
1.0  
Collector Current I  
C
(mA)  
2
µPA811T  
Cre - VCB Characteristics  
fT - IC Characteristics  
5.0  
10  
8
V
CE = 3 V  
f = 1 MHz  
f = 2 GHz  
2.0  
1.0  
0.5  
6
4
2
0
0.2  
0.1  
1
2
5
10  
20  
50  
50  
50  
0.5  
1
5
10  
(mA)  
50  
Collector to Base Voltage VCB (V)  
Collector Current I  
C
l S21e l 2 - I  
C
Characteristics  
| S21e |  
2 - f Characteristics  
12  
8
25  
20  
15  
10  
V
CE = 3 V  
V
CE = 3 V  
f = 2 GHz  
IC = 5 mA  
4
0
5
0
0.5  
1
5
10  
0.1  
0.5  
1.0  
2.0  
5.0  
Collector Current I (mA)  
C
Frequency f (GHz)  
NF - IC Characteristics  
5
V
CE = 3 V  
f = 2 GHz  
4
3
2
1
0
0.5  
1
5
10  
(mA)  
Collector Current I  
C
3
µPA811T  
S-PARAMETERS  
VCE = 3 V, IC = 1 mA  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
0.969  
0.957  
0.909  
0.909  
0.895  
0.876  
0.821  
0.750  
0.710  
0.673  
0.658  
0.625  
0.573  
0.537  
0.505  
0.479  
0.448  
0.424  
0.399  
0.389  
–7.9  
–14.7  
–21.2  
–27.4  
–33.5  
–42.4  
–49.4  
–56.0  
–60.5  
–65.3  
–72.2  
–78.4  
–85.4  
–91.2  
–97.1  
–103.2  
–110.2  
–115.4  
–120.9  
–127.2  
3.625  
3.405  
3.366  
3.218  
3.147  
3.150  
3.040  
2.966  
2.779  
2.640  
2.532  
2.504  
2.427  
2.350  
2.305  
2.210  
2.152  
2.101  
2.034  
1.987  
172.0  
165.9  
156.4  
153.3  
144.8  
141.2  
132.0  
126.2  
119.6  
114.1  
110.6  
105.6  
102.7  
96.2  
0.016  
0.031  
0.046  
0.059  
0.071  
0.083  
0.092  
0.105  
0.110  
0.119  
0.124  
0.129  
0.138  
0.137  
0.143  
0.142  
0.148  
0.155  
0.157  
0.165  
85.0  
80.7  
73.3  
70.9  
66.4  
65.6  
60.7  
58.0  
55.8  
51.5  
51.0  
48.2  
46.2  
44.5  
42.0  
43.8  
41.9  
42.9  
40.4  
38.1  
0.999  
0.989  
0.961  
0.955  
0.913  
0.913  
0.896  
0.888  
0.869  
0.840  
0.805  
0.758  
0.738  
0.706  
0.709  
0.693  
0.689  
0.678  
0.650  
0.631  
–3.6  
–6.4  
300.00  
–10.4  
–12.4  
–14.2  
–16.7  
–18.0  
–21.1  
–23.3  
–27.3  
–28.9  
–30.8  
–31.1  
–31.5  
–32.1  
–32.6  
–35.3  
–36.5  
–39.1  
–40.5  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
92.3  
88.3  
83.6  
81.0  
75.9  
71.7  
VCE = 3 V, IC = 3 mA  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
0.903  
0.856  
0.763  
0.713  
0.656  
0.602  
0.536  
0.466  
0.412  
0.374  
0.346  
0.315  
0.285  
0.263  
0.245  
0.230  
0.214  
0.202  
0.192  
0.193  
–14.0  
–25.6  
8.928  
8.248  
7.535  
6.882  
6.233  
5.854  
5.342  
4.989  
4.471  
4.123  
3.871  
3.667  
3.575  
3.367  
3.214  
3.038  
2.918  
2.821  
2.696  
2.613  
165.7  
154.2  
141.5  
135.1  
125.9  
121.4  
112.1  
106.9  
100.4  
95.3  
0.016  
0.028  
0.042  
0.051  
0.058  
0.067  
0.072  
0.080  
0.084  
0.091  
0.095  
0.100  
0.108  
0.111  
0.118  
0.121  
0.129  
0.137  
0.143  
0.152  
89.5  
74.6  
68.0  
65.0  
61.2  
61.4  
58.8  
57.9  
58.0  
55.7  
56.9  
55.9  
55.8  
55.6  
54.5  
57.3  
55.9  
57.2  
54.8  
53.2  
0.985  
0.951  
0.889  
0.851  
0.785  
0.764  
0.733  
0.717  
0.696  
0.669  
0.639  
0.603  
0.587  
0.566  
0.570  
0.561  
0.559  
0.553  
0.532  
0.515  
–6.5  
–11.2  
–16.4  
–18.6  
–20.1  
–21.7  
–21.9  
–23.8  
–25.0  
–27.6  
–28.3  
–29.2  
–28.7  
–28.3  
–28.2  
–28.3  
–30.5  
–31.5  
–33.7  
–34.7  
300.00  
–36.2  
400.00  
–44.7  
500.00  
–52.3  
600.00  
–62.4  
700.00  
–70.5  
800.00  
–77.7  
900.00  
–82.8  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
–87.8  
–93.4  
92.3  
–100.2  
–106.7  
–112.8  
–119.7  
–126.7  
–135.0  
–141.2  
–147.9  
–154.2  
88.1  
86.0  
81.3  
78.3  
75.5  
72.3  
69.9  
65.8  
61.8  
4
µPA811T  
S-PARAMETERS  
VCE = 3 V, IC = 5 mA  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
0.848  
0.766  
0.647  
0.575  
0.506  
0.450  
0.393  
0.335  
0.290  
0.260  
0.236  
0.213  
0.193  
0.178  
0.168  
0.161  
0.153  
0.148  
0.143  
0.149  
–18.5  
–33.1  
12.800  
11.314  
9.862  
8.611  
7.527  
6.847  
6.116  
5.624  
4.970  
4.521  
4.202  
3.947  
3.792  
3.468  
3.408  
3.218  
3.085  
2.980  
2.840  
2.752  
161.3  
146.2  
132.5  
125.0  
116.3  
112.2  
103.6  
99.2  
0.015  
0.026  
0.038  
0.044  
0.052  
0.058  
0.064  
0.072  
0.076  
0.084  
0.088  
0.094  
0.102  
0.106  
0.115  
0.118  
0.128  
0.137  
0.143  
0.153  
78.5  
71.6  
66.4  
64.0  
62.0  
63.0  
61.6  
61.8  
62.4  
60.4  
62.0  
61.2  
61.3  
61.1  
60.2  
62.3  
60.8  
61.9  
59.4  
57.6  
0.974  
0.913  
0.829  
0.778  
0.712  
0.691  
0.666  
0.652  
0.637  
0.616  
0.592  
0.561  
0.550  
0.532  
0.538  
0.533  
0.532  
0.527  
0.507  
0.492  
–8.3  
–14.0  
–19.0  
–20.4  
–20.9  
–21.5  
–21.0  
–22.2  
–23.1  
–25.3  
–25.7  
–26.4  
–25.7  
–25.1  
–25.1  
–25.2  
–27.5  
–28.5  
–30.7  
–31.8  
300.00  
–45.5  
400.00  
–54.3  
500.00  
–62.0  
600.00  
–71.5  
700.00  
–79.6  
800.00  
–86.5  
900.00  
–91.7  
93.3  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
–97.0  
88.7  
–102.5  
–109.7  
–116.7  
–123.3  
–131.8  
–139.7  
–149.2  
–156.1  
–163.5  
–169.9  
86.2  
82.4  
80.3  
76.1  
73.8  
71.4  
68.7  
66.4  
62.7  
58.8  
5
µPA811T  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  

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