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PS7841-A15 [NEC]

FOR OPTICAL DAA 16 PIN SOP SOLID STATE RELAY; 用于光学DAA 16脚SOP固态继电器
PS7841-A15
型号： PS7841-A15
厂家： NEC    NEC
描述：

FOR OPTICAL DAA 16 PIN SOP SOLID STATE RELAY
用于光学DAA 16脚SOP固态继电器

继电器 固态继电器
文件： 总3页 (文件大小：35K)
中文：  中文翻译
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FOR OPTICAL DAA 16 PIN  
SOP SOLID STATE RELAY  
PS7841-A15  
FEATURES  
DESCRIPTION  
•
FOR OPTICAL DAA CIRCUT  
Solid State Relay  
Photocoupler (AC Input Response)  
Diode Bridge  
PS7841-A15isasolidstaterelayforopticalDAA(DataAccess  
Arrangment) containing a diode bridge, MOSFET,  
photocoupler, Darlington transistor and LED.  
Darlington Transistor  
This device is suitable for analog signal control applications  
suchasnotebookPCs, modemcards, voicetelephoneandfax  
machines.  
•
SMALL AND THIN PACKAGE  
16 Pin SOP = 255 mil, Pin Pitch = 1.27 mm,  
Height = 2.1 mm  
APPLICATIONS  
•
•
HIGH ISOLATION VOLTAGE  
BV = 1500 Vr.m.s.  
•
•
•
•
NOTEBOOK PC, PDA  
MODEM CARD  
TELEPHONE, FAX  
MODEM  
AVAILABLE IN TAPE AND REEL  
PS7841-A15-F3, F4  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PS7841-A15  
TYP  
SYMBOLS  
Diode  
PARAMETERS  
UNITS  
V
MIN  
MAX  
1.4  
VF  
Forward Voltage, IF = 10 mA  
1.2  
MOSFET  
IOFF  
Off-State Leakage Current, VL = 400 V, IF = 0 mA  
µA  
1.0  
Coupled  
RON  
On-State Resistance, IF = 10 mA, IL = 10 mA  
IF = 10 mA, IL = 120 mA  
Ω
20  
16  
30  
25  
tON  
Turn-On Time, IF = 10 mA, VL = 5 V, RL = 500 Ω,  
PW ≥ 10 mS  
ms  
ms  
0.3  
1.0  
tOFF  
Turn-Off Time, IF = 10 mA, VL = 5 V, RL = 500 Ω,  
PW ≥ 10 mS  
0.04  
0.2  
Isolation Resistance  
Rin-out  
Isolation Resistance, Vin-out = 500 VDC  
Ω
109  
Isolation Capacitance  
CI-O  
Isolation Capacitance, V = 0, f = 1 MHZ  
pF  
1.1  
Notes:  
1. Pin No. 2, 3, 15, 16.  
PS7841-A15  
16  
15  
14  
13  
12  
11  
10  
9
1
2
3
4
5
6
7
8
California Eastern Laboratories  
PS7841-A15  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PS7841-A15  
TYP  
SYMBOLS  
Diode  
PARAMETERS  
UNITS  
V
MIN  
MAX  
1.4  
VF  
Forward Voltage, IF = 10 mA  
1.2  
Transistor  
ICEO  
Collector to Emitter Dark Current, VCE = 40 V, IF = 0 mA  
µA  
0.1  
Coupler  
CTR  
Current Transfer Ratio (IC/IF), IF = 5 mA, VCE = 5 V  
Collector Saturation Voltage, IF = 10 mA, IC = 2 mA  
Rise Time, VCC = 5 V, IC = 2 mA, RL = 100 Ω,  
Fall Time, VCC = 5 V, IC = 2 mA, RL = 100 Ω,  
%
V
50  
200  
0.1  
3.0  
5.0  
400  
0.3  
VCE(SAT)  
tr  
tf  
µs  
µs  
Isolation Resistance  
Rin-out  
Isolation Resistance, Vin-out = 500 VDC  
Ω
pF  
V
1011  
Isolation Capacitance  
CI-O  
Isolation Capacitance, V = 0, f = 1 MHZ  
0.4  
0.9  
VF  
Forward Voltage, IF = 120 mA  
1.2  
10  
IR  
Reverse Current, VR = 100 V  
µA  
V
VCE(SAT)  
ICEX  
hFE  
Collector Saturation Voltage, IC = 120 mA, IB = 100 µA  
Collector to Emitter Dark Current, IB = 0 mA, VCE = 30 V  
DC Current Gain, IC = 120 mA, VCE = 10 V  
0.9  
0.01  
1.2  
µA  
1.0  
10000  
30000  
Notes:  
1. Pin No. 7, 8, 9, 10.  
2. Pin No. 10, 11, 12, 15.  
3. Pin No. 12,13, 14.  
PS7841-A15  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
RECOMMENDED  
OPERATING CONDITIONS (TA = 25 °C)  
SYMBOLS  
Diode  
VR  
PARAMETERS  
UNITS RATINGS  
SYMBOL  
PARAMETER  
LED Operating Current  
LED Off Voltage  
UNITS MIN TYP MAX  
Reverse Voltage  
V
mA  
5
50  
50  
1
IF  
mA  
V
2
0
10  
20  
IF  
Forward Current  
VF  
0.5  
PD  
Power Dissipation  
Peak Forward Current3  
mW/ch  
A
IF (Peak)  
MOSFET  
VL  
Break Down Voltage  
Continuous Load Current  
Power Dissipation  
V
400  
120  
430  
OUTLINE DIMENSIONS (Units in mm)  
IL  
mA  
PD  
mW/ch  
TOP VIEW  
10.3±0.3  
Diode  
IF  
16  
15  
14  
13  
12  
11  
10  
9
Forward Current  
mA  
mW/ch  
A
50  
50  
1
PD  
Power Dissipation  
Peak Forward Current3  
IF (Peak)  
Transistor  
1
2
3
4
5
6
7
8
VCEO  
Collector to Emitter Voltage  
V
40  
80  
50  
7.0 ± 0.3  
4.4  
2.13  
MAX  
1.3  
2.0  
+0.10  
-0.05  
IC  
Collector Current  
mA  
0.15  
1.27  
0.05  
PD  
Power Dissipation  
mW/ch  
0.5 ± 0.3  
+0.10  
-0.05  
0.40  
0.12 M  
1. NC  
9. LED Anode, Cathode  
10. LED Cathode, Anode  
IF  
VR  
Forward Current  
mA  
V
140  
100  
40  
2. LED Anode  
3. LED Cathode 11. Di. Input  
Reverse Voltage  
4. NC  
12. Di. Output  
5. NC  
13. Tr. Emitter (Darlington)  
14. Tr. Base (Darlington)  
15. MOSFET  
6. NC  
VCEO  
IC  
Collector to Emitter Voltage  
Collector Current  
V
7. Tr. Collector  
8. Tr. Emitter  
16. MOSFET  
mA  
120  
PD  
Power Dissipation  
mW/ch  
500  
BV  
PT  
Isolation Voltage3  
Vr.m.s.  
mW  
°C  
1500  
650  
Total Power Dissipation  
Storage Temperature  
Operating Ambient Temp.  
TSTG  
TA  
-40 to +100  
-40 to +80  
°C  
Notes:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
2. Pin No. 2, 3, 15, 16.  
3. PW = 100 µs, Duty Cycle = 1 %  
4. Pin No. 7, 8, 9, 10.  
5. Pin No. 10, 11, 12, 16.  
6. Pin No. 12, 13, 14.  
7. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input  
and output.  
EXCLUSIVE NORTH AMERICAN AGENT FOR  
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS  
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279  
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM  
PRINTED IN USA ON RECYCLED PAPER -1/99  
DATA SUBJECT TO CHANGE WITHOUT NOTICE  

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