PS2633-N [NEC]
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NEC 
HIGH ISOLATION VOLTAGE
HIGH COLLECTOR TO EMITTER
VOLTAGE DARLINGTON TYPE
6 PIN OPTOCOUPLER
PS2633
PS2633L
PS2634
PS2634L
FEATURES
DESCRIPTION
PS2633, PS2633L, PS2634, and PS2634L are optically
coupled isolators containing a GaAs light emitting diode and
an NPN silicon Darlington-connected phototransistor.
PS2633 and PS2634 are in a plastic DIP (Dual In-Line
Package). Ps2633L and PS2634L are lead bending type
(Gull-wing) for surface mount. PS2633 and PS2633L have a
base pin and PS2634 and PS2634L have no base pin.
•
•
•
•
HIGH ISOLATION VOLTAGE
BV: 5 k Vr.m.s. MIN
HIGH COLLECTOR TO EMITTER VOLTAGE
VCEO: 300 V MIN
ULTRA HIGH CURRENT TRANSFER RATIO
CTR: 1000% MIN
HIGH SPEED SWITCHING
tr,tf = 100 µs TYP
APPLICATIONS
•
•
TELEPHONE/TELEGRAPH LINE RECEIVER
POWER SUPPLY
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PS2633, PS2633L, PS2634, PS2634L
SYMBOLS
PARAMETERS
Forward Voltage, IF = 10 mA
UNITS
V
MIN
TYP
MAX
1.4
5
VF
IR
1.15
Reverse Current, VR = 5 V
µA
C
Junction Capacitance, V = 0, f = 1.0 MHz
pF
30
ICEO
Collector to Emitter Dark Current
VCE = 300 V, IF = 0
nA
400
BVCEO
BVEBO
Collector to Emitter Breakdown Voltage
IC = 1 mA, IB = 0
Emitter to Base Breakdown Voltage1
V
V
300
6
IE = 100 µA, IC = 0
CTR
VCE(sat)
R1-2
C1-2
tr
Current Transfer Ratio, IF =1 mA, VCE = 2 V
Collector Saturation Voltage, IF =1 mA, IC = 2 mA
Isolation Resistance, Vin-out = 1.0 k VDC
Isolation Capacitance, V = 0, f = 1.0 MHz
Rise Time2, VCC = 5 V, IC = 10 mA
%
V
1000
4000
15000
1.0
Ω
1011
pF
µs
µs
0.6
100
100
tf
Fall Time2, VCC = 5 V, IC = 10 mA
2. Test Circuit for Switching Time
1. Only PS2633, PS2633L
V
CC
V
CC
PULSE INPUT
PULSE INPUT
6
1
5
4
3
6
1
5
4
3
PW = 100 µs
Duty Cycle = 1/10
PW = 100 µs
Duty Cycle = 1/10
1
1
5
4
5
(
)
(
)
I
F
I
F
4
2
2
V
out
V
out
50 Ω
50 Ω
R
L
= 100 Ω
RL = 100 Ω
2
2
6
PS2633
PS2634
PS2633
PS2634
California Eastern Laboratories
PS2633, PS2633L, PS2634, PS2634L
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
Diode
VR
PARAMETERS
UNITS
RATINGS
Reverse Voltage
V
mA
mW
A
6
80
150
1
IF
Forward Current (DC)
Power Dissipation
PD
IF (Peak)
Peak Forward Current
PW = 100 µs, Duty Cycle 1%
Transistor
VCEO
VEBO
IC
Collector to Emitter Voltage
Emitter to Base Voltage2
Collector Current
V
V
300
6
mA
mW
150
300
PC
Power Dissipation
Coupled
BV
Isolation Voltage3
Vr.m.s.
°C
5000
TSTG
TOP
Storage Temperature
Operating Temperature
-55 to +150
-55 to +100
°C
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Only PS2633, PS2633L
3. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input
(Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common).
OUTLINE DIMENSIONS(Units in mm)
PS2633, PS2634
PS2633L, PS2634L
10.16 MAX
10.16 MAX
6
4
6
4
φ 1
φ 1
1
3
3.8
MAX
1
3
7.62
6.5
7.62
6.5
2.54
0.9± 0.25
9.60 ± 0.4
2.54
MAX
1.34
2.54
MAX
2.54
0 to 15˚
1.34 ± 0.10
0.25
M
0.50 ± 0.10
0.25
M
PIN CONNECTIONS (Top View)
PS2633, PS2633L
PS2634, PS2634L
6
1
5
2
4
3
6
1
5
4
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. NC
2
3
PS2633, PS2633L, PS2634, PS2634L
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
DIODE POWER DISSIPATION
vs. AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
150
100
50
400
300
200
100
0
25
50
75
100
0
25
50
75
100
Ambient Temperature, TA (°C)
Ambient Temperature, TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
160
140
T
A
= 100 ˚C
75 ˚C
4.5 mA
4.0 mA
5.0 mA
50 ˚C
3.5 mA
25 ˚C
0 ˚C
-25 ˚C
-55 ˚C
10
1
120
100
80
3.0 mA
60
1.0 mA
0.1
40
20
I
F
= 0.5 mA
6
0.01
0
1
2
3
4
5
7
8
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage, VF (V)
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
300
10 µ
VCE = 300 V
100
50
1 µ
100 n
10 n
10
5
1
1 n
0.5
100 p
0.1
-50
0
-25
0
25
50
75
100
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature, TA (°C)
Collector Saturation Voltage, VCE(sat) (V)
PS2633, PS2633L, PS2634, PS2634L
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
NORMALIZED OUTPUT CURRENT
vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
1.2
5000
4000
V
CE = 2 V
Sample A
Sample B
1.0
0.8
0.6
3000
2000
0.4
Normalized to 1.0
1000
0
at T
A = 25 ˚C
0.2
0
I
F
= 1 mA, VCE = 2 V
0.1
0.5
1
5
10
20
-50
-25
0
25
50
75
100
Ambient Temperature, TA (°C)
Forward Current, IF (mA)
SWITCHING TIME
vs. LOAD RESISTANCE
FREQUENCY RESPONSE
300
VCC = 10 V, IC = 10 mA
t
r
Pulse Width = 5 ms
Duty Cycle = 1/2
0
-5
100
50
10 Ω
t
d
100 Ω
-10
t
f
1 kΩ
10
5
-15
-20
V
V
CE = 4 V, I
IN = 0.1 VP-P
C = 10 mA
1 kΩ
1
µF
-25
-30
t
s
47 Ω
VIN
VOUT
RL
1
20
50
100
500
1 k
2 k
0.01
0.1
1
10
100
Load Resistance, RL (Ω)
Frequency, f (kHz)
CTR DEGRADATION
1.2
1.0
0.8
IF = 1 mA
TA = 25 ˚C
T
A
= 60 ˚C
0.6
0.4
0.2
0
2
3
4
6
10
5
10
10
10
10
10
Time (HR)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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PRINTED IN USA ON RECYCLED PAPER -3/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
相关型号：
PS2633L
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TYPE 6 PIN OPTOCOUPLER
NEC
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