PS2608L-E4 [NEC]

AC Input-Darlington Output Optocoupler, 1-Element, 5000V Isolation, GULL-WING, PLASTIC, DIP-6;
PS2608L-E4
型号: PS2608L-E4
厂家: NEC    NEC
描述:

AC Input-Darlington Output Optocoupler, 1-Element, 5000V Isolation, GULL-WING, PLASTIC, DIP-6

输入元件 输出元件 光电
文件: 总8页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
PHOTOCOUPLER  
PS2607,PS2608,PS2607L,PS2608L  
HIGH ISOLATION VOLTAGE  
AC INPUT, HIGH CTR  
NEPOCTM Series−  
6-PIN PHOTOCOUPLER  
DESCRIPTION  
The PS2607, PS2608, PS2607L, PS2608L are optically coupled isolators containing GaAs light emitting diodes  
and an NPN silicon darlington-connected phototransistor in a plastic DIP (Dual In-line Package).  
The PS2607L, PS2608L are lead bending type (Gull-wing) for surface mount.  
FEATURES  
High Isolation voltage (BV = 5 000 Vr.m.s.)  
AC input response  
High-speed switching (tr, tf = 100 µs TYP.)  
High current transfer ratio (CTR = 2 000 % TYP.)  
UL approved: File No. E72422 (S)  
Ordering number of taping product: PS2607L-E3, E4, PS2608L-E3, E4  
APPLICATIONS  
Telephone  
FAX/OA equipment  
AC/DC line interface  
Measurement equipment  
The information in this document is subject to change without notice.  
Document No. P11287EJ4V0DS00 (4th edition)  
Date Published April 1998 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1988  
©
PS2607,PS2608,PS2607L,PS2608L  
PACKAGE DIMENSIONS (in millimeters)  
PS2607, PS2608  
PS2607L, PS2608L  
Lead bending type  
DIP type  
10.16 MAX.  
10.16 MAX.  
7.62  
6.5  
7.62  
6.5  
0.9±0.25  
9.60±0.4  
2.54 MAX.  
1.34±0.10 2.54  
0 to 15˚  
0.25  
M
2.54 MAX.  
2.54  
1.34  
0.50±0.10  
0.25  
M
PIN CONNECTIONS (TOP VIEW)  
PS2607, PS2607L  
PS2608, PS2608L  
6
1
5
4
6
1
5
4
1. Anode, Cathode  
2. Cathode, Anode  
3. NC  
4. Emitter  
5. Collector  
6. Base  
1. Anode, Cathode  
2. Cathode, Anode  
3. NC  
4. Emitter  
5. Collector  
6. NC  
2
3
2
3
2
PS2607,PS2608,PS2607L,PS2608L  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)  
Parameter  
Symbol  
IF  
Ratings  
Unit  
mA  
Diode  
Forward Current (DC)  
Power Dissipation Derating  
Power Dissipation  
±80  
PD/°C  
PD  
1.5  
mW/°C  
mW  
A
150  
Peak Forward Current*1  
IFP  
±1  
Transistor Collector to Emitter Voltage  
Emitter to Collector Voltage  
Collector Current  
VCEO  
VECO  
IC  
40  
6
V
V
200  
mA  
Power Dissipation Derating  
Power Dissipation  
PC/°C  
PC  
2.0  
mW/°C  
mW  
Vr.m.s.  
°C  
200  
Isolation Voltage*2  
BV  
5 000  
55 to +100  
55 to +150  
Operating Ambient Temperature  
Storage Temperature  
TA  
Tstg  
°C  
*1 PW = 100 µs, Duty Cycle = 1 %  
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output  
3
PS2607,PS2608,PS2607L,PS2608L  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Parameter  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
1.1  
MAX.  
1.4  
Unit  
V
Diode  
Forward Voltage  
Terminal Capacitance  
IF = ±10 mA  
Ct  
V = 0 V, f = 1.0 MHz  
VCE = 40 V, IF = 0 mA  
60  
pF  
nA  
Collector to Emitter  
Dark Current  
Transistor  
ICEO  
400  
DC Current Gain*1  
hFE  
IC = 2 mA, VCE = 5 V  
180  
Current Transfer Ratio  
(IC/IF)  
Coupled  
CTR  
IF = ±1 mA, VCE = 2 V  
200  
0.3  
2 000  
%
V
CTR Ratio*2  
IF = ±1 mA, IC = 2 mA  
IF = ±1 mA, IC = 2 mA  
1.0  
3.0  
1.0  
CTR1/  
CTR2  
Collector Saturation  
Voltage  
VCE (sat)  
Isolation Resistance  
Isolation Capacitance  
Rise Time*3  
RI-O  
CI-O  
tr  
VI-O = 1.0 kVDC  
1011  
V = 0 V, f = 1.0 MHz  
0.6  
100  
100  
pF  
µs  
VCC = 5 V, IC = 10 mA, RL = 100 Ω  
Fall Time*3  
tf  
*1 Second stage transistor (PS2607, PS2607L only)  
*2 CTR1 = IC1/IF1, CTR2 = IC2/IF2  
I
I
F1  
I
I
C1  
C2  
VCE  
F2  
*3 Test circuit for switching time  
Pulse input  
VCC  
(PW = 1 ms,  
Duty cycle = 1/10)  
I
F
VOUT  
50  
RL = 100 Ω  
4
PS2607,PS2608,PS2607L,PS2608L  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)  
DIODE POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
TRANSISTOR POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
200  
150  
100  
50  
200  
150  
100  
50  
0
25  
50  
75  
100  
0
25  
50  
75  
100  
Ambient Temperature T  
A
(˚C)  
Ambient Temperature T  
A
(˚C)  
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
100  
10  
1
80  
60  
T
A
= +100 ˚C  
+75 ˚C  
+50 ˚C  
40  
+25 ˚C  
0 ˚C  
–25 ˚C  
–55 ˚C  
20  
0
–20  
–40  
–60  
–80  
0.1  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
(V)  
1.6  
–1.6 –1.2 –0.8 –0.4  
0
0.4 0.8 1.2 1.6  
(V)  
Forward Voltage V  
F
Forward Voltage V  
F
COLLECTOR TO EMITTER DARK  
CURRENT vs. AMBIENT TEMPERATURE  
COLLECTOR CURRENT vs.  
COLLECTOR SATURATION VOLTAGE  
50 000  
1 000  
100  
10  
I
F
= 10 mA  
10 000  
5 000  
5 mA  
V
CE = 40 V  
24 V  
10 V  
5 V  
1 000  
500  
1 mA  
0.5 mA  
2 V  
100  
50  
0.2 mA  
0.1 mA  
1
10  
5
1
0.1  
0.4  
–60 –40 –20  
0
20  
40  
60  
80 100  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Ambient Temperature T  
A
(˚C)  
Collector Saturation Voltage VCE(sat) (V)  
5
PS2607,PS2608,PS2607L,PS2608L  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
140  
1.2  
1.0  
0.8  
0.6  
120  
100 5 mA  
80  
2 mA  
60  
40  
20  
0.4  
Normalized to 1.0  
1 mA  
4
0.2  
0.0  
at T  
A
= 25 ˚C,  
I
F
= 0.5 mA  
6
I
F
= 1 mA, VCE = 2 V  
0
2
8
10  
–50  
–25  
0
25  
50  
75  
100  
Collector to Emitter Voltage VCE (V)  
Ambient Temperature T (˚C)  
A
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
SWITCHING TIME vs.  
LOAD RESISTANCE  
2 000  
1 000  
500  
5 000  
4 000  
3 000  
2 000  
V
CC = 10 V,  
= 2 mA  
V
CE = 2 V  
I
C
µ
t
t
off  
on  
Sample A  
B
200  
100  
50  
t
t
f
C
D
r
1 000  
0
20  
50  
0.05 0.1  
0.5  
1
5
10  
50  
100  
200  
500  
()  
1 k  
2 k  
Forward Current I  
F
(mA)  
Load Resistance R  
L
LONG TERM CTR DEGRADATION  
FREQUENCY RESPONSE  
5
0
1.2  
1.0  
I = 1 mA,  
F
V
CE = 2 V  
I
T
F
= 1 mA,  
= 25 ˚C  
A
–5  
0.8  
0.6  
R = 100 Ω  
L
I
T
F
= 1 mA,  
= 60 ˚C  
A
–10  
–15  
0.4  
0.2  
0.0  
–20  
–25  
CTR Test condition  
= 1 mA, VCE = 2 V  
I
F
0.2 0.5  
1
2
5
10 20  
50 100 200  
10  
102  
103  
104 105 106  
Frequency f (kHz)  
Time (Hr)  
Remark The graphs indicate nominal characteristics.  
6
PS2607,PS2608,PS2607L,PS2608L  
RECOMMENDED SOLDERING CONDITIONS  
(1) Infrared reflow soldering  
• Peak reflow temperature  
235 °C (package surface temperature)  
• Time of temperature higher than 210 °C 30 seconds or less  
• Number of reflows  
• Flux  
Three  
Rosin flux containing small amount of chlorine (The flux with a  
maximum chlorine content of 0.2 Wt % is recommended.)  
Recommended Temperature Profile of Infrared Reflow  
(heating)  
to 10 s  
235 ˚C (peak temperature)  
210 ˚C  
to 30 s  
120 to 160 ˚C  
60 to 90 s  
(preheating)  
Time (s)  
Caution Please avoid removing the residual flux by water after the first reflow process.  
Peak temperature 235 ˚C or below  
(2) Dip soldering  
• Temperature  
260 °C or below (molten solder temperature)  
• Time  
10 seconds or less  
• Number of times  
• Flux  
One  
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of  
0.2 Wt % is recommended.)  
7
PS2607,PS2608,PS2607L,PS2608L  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEPOC is a trademark of NEC Corporation.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  

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