PS2561L1-1 [NEC]

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES; 高隔离电压单晶体管型多光耦合器系列


型号：	PS2561L1-1
厂家：	NEC
描述：	HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES 高隔离电压单晶体管型多光耦合器系列晶体光电晶体管输出元件分离技术隔离技术
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DATA SHEET

PHOTOCOUPLER

PS2561-1,-2, PS2561L-1,-2

HIGH ISOLATION VOLTAGE

SINGLE TRANSISTOR TYPE

MULTI PHOTOCOUPLER SERIES

DESCRIPTION

The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an

NPN silicon phototransistor.

PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for

surface mount.

FEATURES

•

High isolation voltage

BV = 5 000 Vr.m.s.: standard products

BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)

•

High collector to emitter voltage (V^CEO= 80 V)

High current transfer ratio (CTR = 200 % TYP.)

High-speed switching (t^r= 3 µs TYP., t^f= 5 µs TYP.)

UL approved (File No. E72422 (S) )

CSA approved (No. CA 101391)

BSI approved (BS415, BS7002) No. 7112

SEMKO approved (SS4410165) No. 9317144

NEMKO approved (NEK-HD 195S6) No. A21409

DEMKO approved (Section 101, 137) No. 300535

FIMKO approved (E69-89) No. 167265-08

VDE0884 approved (Option)

APPLICATIONS

•

Power supply

Telephone/FAX.

FA/OA equipment

Programmable logic controller

The information in this document is subject to change without notice.

Document No. P12989EJ4V0DS00 (4th edition)

(Previous No. LC-2225)

The mark shows major revised points.

1992

Date Published August 1997 NS

Printed in Japan

PS2561-1,-2,PS2561L-1,-2

PACKAGE DIMENSIONS (in millimeters)

DIP Type

PS2561-1

PS2561-1 (New Package)

5.1 MAX.

4.6 ± 0.35

1 2

1. Anode

2. Cathode

3. Emitter

4. Collector

2. Cathode

3. Emitter

4. Collector

7.62

1.25±0.15

0.50 ± 0.10

0.25

0 to 15˚

0.50 ± 0.10

0.25

2.54

PS2561L1-1

PS2561-2

8 7 6 5

5.1 MAX.

10.2 MAX.

1 2 3 4

1. Anode

1, 3. Anode

2. Cathode

3. Emitter

4. Collector

2, 4. Cathode

5, 7. Emitter

6, 8. Collector

10.16

7.62

0.50 ± 0.10

1.25±0.15

0 to 15˚

1.25±0.15

0.25

0 to 15˚

0.50 ± 0.10

0.25

2.54

Caution New package 1ch only

PS2561-1,-2,PS2561L-1,-2

Lead Bending Type

PS2561L-1 (New Package)

PS2561L-1

4.6 ± 0.35

5.1 MAX.

1 2

1. Anode

2. Cathode

3. Emitter

4. Collector

2. Cathode

3. Emitter

4. Collector

7.62

0.90 ± 0.25

9.60 ± 0.4

0.90 ± 0.25

9.60 ± 0.4

1.25±0.15

0.25

1.25±0.15

0.25

2.54

PS2561L-2

PS2561L2-1

8 7 6 5

5.1 MAX.

10.2 MAX.

1 2 3 4

1. Anode

1, 3. Anode

2. Cathode

3. Emitter

4. Collector

2, 4. Cathode

5, 7. Emitter

6, 8. Collector

7.62

0.9 ± 0.25

10.16

0.90 ± 0.25

9.60 ± 0.4

1.25±0.15

0.25

12.0 MAX.

2.54

Caution New package 1ch only

PS2561-1,-2,PS2561L-1,-2

ORDERING INFORMATION

Part Number

Package

Safety Standard Approval

Application part

number^*1

PS2561-1

4-pin DIP

Standard products

• UL approved

PS2561-1

• CSA approved

PS2561L-1

PS2561L1-1

PS2561L2-1

4-pin DIP (lead bending surface mount)

4-pin DIP (for long distance)

4-pin DIP (for long distance surface

mount)

• BSI approved

• NEMKO approved

• DEMKO approved • SEMKO approved

• FIMKO approved

PS2561-2

8-pin DIP

PS2561-2

PS2561-1

PS2561L-2

8-pin DIP (lead bending surface mount)

PS2561-1-V

4-pin DIP

VDE0884 approved products (Option)

PS2561L-1-V

PS2561L1-1-V

PS2561L2-1-V

4-pin DIP (lead bending surface mount)

4-pin DIP (for long distance)

4-pin DIP (for long distance surface

mount)

PS2561-2-V

8-pin DIP

PS2561-2

PS2561L-2-V

8-pin DIP (lead bending surface mount)

*1 As applying to Safety Standard, following part number should be used.

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, unless otherwise specified)

Parameter

Symbol

Ratings

PS2561-1,

Unit

PS2561-2,

PS2561L-2

PS2561L-1

Diode

Reverse Voltage

V^R

I^F

Forward Current (DC)

Power Dissipation Derating

Power Dissipation

∆P^D/°C

P^D

1.5

1.2

mW/°C

mW/ch

150

120

Peak Forward Current^*1

I^FP

Transistor Collector to Emitter Voltage

Emitter to Collector Voltage

Collector Current

V^CEO

V^ECO

I^C

mA/ch

mW/°C

mW/ch

Vr.m.s.

Power Dissipation Derating

∆P^C/°C

P^C

1.5

1.2

Power Dissipation

150

120

Isolation Voltage^*2

5 000

3 750^*3

Operating Ambient Temperature

Storage Temperature

T^A

–55 to +100

–55 to +150

°C

T^stg

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at T^A= 25 °C, RH = 60 % between input and output

*3 VDE0884 approved products (Option)

PS2561-1,-2,PS2561L-1,-2

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

Parameter

Symbol

V^F

Conditions

MIN.

TYP.

1.17

MAX.

1.4

Unit

Diode

Forward Voltage

Reverse Current

Terminal Capacitance

I^F= 10 mA

V^R= 5 V

I^R

µA

C^t

V = 0 V, f = 1.0 MHz

V^CE= 80 V, I^F= 0 mA

Transistor Collector to Emitter Dark

Current

I^CEO

100

Current Transfer Ratio^*1

Coupled

CTR

I^F= 5 mA, V^CE= 5 V

I^F= 10 mA, I^C= 2 mA

200

400

0.3

Collector Saturation

Voltage

V^{CE (sat)}

Isolation Resistance

Isolation Capacitance

Rise Time ^*2

R^I-O

C^I-O

t^r

V^I-O= 1.0 kV

10¹¹

Ω

V = 0 V, f = 1.0 MHz

V^CC= 10 V, I^C= 2 mA, R^L= 100 Ω

0.5

µs

Fall Time ^*2

t^f

*1 CTR rank (only PS2561-1, PS2561L-1)

: 200 to 400 (%)

*2 Test circuit for switching time

Pulse Input

VCC

PW = 100

M : 80 to 240 (%)

D : 100 to 300 (%)

H : 80 to 160 (%)

W : 130 to 260 (%)

Duty Cycle = 1/10

OUT

50 Ω

RL = 100 Ω

PS2561-1,-2,PS2561L-1,-2

TYPICAL CHARACTERISTICS (T^A= 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

150

100

150

100

PS2561-1

PS2561L-1

PS2561-2

1.5 mW/˚C

PS2561L-2

1.5 mW/˚C

PS2561L-2

1.2 mW/˚C

100

Ambient Temperature T

125

(˚C)

150

100

125

(˚C)

150

Ambient Temperature T

FORWARD CURRENT vs.

FORWARD VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

= +100 ˚C

+60 ˚C

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

0.5

IF = 5 mA

0.1

0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

Forward Voltage V (V)

Collector to Emitter Voltage VCE (V)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

10 000

1 000

100

CE = 80 V

40 V

24 V

10 V

5 V

= 1 mA

0.5

0.1

–50

–25

100

1.0

0.2

0.4

0.6

0.8

Ambient Temperature T (˚C)

Collector Saturation Voltage VCE(sat) (V)

PS2561-1,-2,PS2561L-1,-2

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

1.2

1.0

0.8

0.6

0.4

0.2

450

400

350

300

250

200

150

100

Normalized to 1.0

at T^A= 25 ˚C,

I^F= 5 mA, VCE = 5 V

–50

0.05 0.1

0.5

Forward Current I^F(mA)

–25

100

Ambient Temperature T^A(˚C)

SWITCHING TIME vs.

LOAD RESISTANCE

SWITCHING TIME vs.

LOAD RESISTANCE

1 000

100

IF = 5 mA,

V^CC= 5 V,

CTR = 290 %

IC = 2 mA,

V^CC= 10 V,

CTR = 290 %

0.1

100

10 k

5 k

50 100

500

1 k

500 1 k

5 k 10 k

50 k 100 k

Load Resistance RL (Ω)

Load Resistance R^L(Ω)

FREQUENCY RESPONSE

LONG TIME CTR DEGRADATION

1.2

1.0

0.8

0.6

0.4

0.2

IF = 5 mA,

V^CE= 5 V

TYP.

–5

IF = 5 mA

T^A= 25 ˚C

–10

–15

–20

100 Ω

I^F= 5 mA

T^A= 60 ˚C

RL = 1 kΩ

300 Ω

10²

10⁴

10⁵

0.5

10 20 50 100200 500

10³

Frequency f (kHz)

Time (Hr)

PS2561-1,-2,PS2561L-1,-2

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

4.3±0.2

1.55±0.1

0.3

1.55±0.1

5.6±0.1

8.0±0.1

Taping Direction

PS2561L-1-E3

PS2561L-1-F3

PS2561L-1-E4

PS2561L-1-F4

Outline and Dimensions (Reel)

2.0±0.5

13.0±0.5

R 1.0

21.0±0.8

+2.0

16.4

–0.0

Packing: PS2561L-1-E3, E4 1 000 pcs/reel

PS2561L-1-F3, F4 2 000 pcs/reel

PS2561-1,-2,PS2561L-1,-2

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

1.55±0.1

4.3±0.2

0.3

10.4±0.1

1.55±0.1

12.0±0.1

Taping Direction

PS2561L-2-E3

PS2561L-2-E4

Outline and Dimensions (Reel)

2.0±0.5

φ13.0±0.5

R 1.0

φ21.0±0.8

+2.0

16.4

–0.0

Packing: 1 000 pcs/reel

PS2561-1,-2,PS2561L-1,-2

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering

• Peak reflow temperature

• Time of temperature higher than 210 °C

• Number of reflows

235 °C (package surface temperature)

30 seconds or less

Three

• Flux

Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

235 ˚C (peak temperature)

210 ˚C

to 30 s

120 to 160 ˚C

60 to 90 s

(preheating)

Time (s)

Caution Please avoid to removed the residual flux by water after the first reflow processes.

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature

260 °C or below (molten solder temperature)

• Time

10 seconds or less

• Number of times

• Flux

One

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of

0.2 Wt % is recommended.)

PS2561-1,-2,PS2561L-1,-2

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter

Application classification (DIN VDE 0109)

Symbol

Speck

Unit

for rated line voltages ≤ 300 Vr.m.s.

for rated line voltages ≤ 600 Vr.m.s.

III

Climatic test class (DIN IEC 68 Teil 1/09.80)

55/100/21

Dielectric strength maximum operating isolation voltage

Test voltage (partial discharge test procedure a for type test and random test)

U^pr= 1.2 × U^IORM, P^d< 5 pC

U^IORM

U^pr

890

V^peak

1 068

Test voltage (partial discharge test procedure b for random test)

U^pr= 1.6 × U^IORM, P^d< 5 pC

U^pr

1 424

V^peak

Highest permissible overvoltage

Degree of pollution (DIN VDE 0109)

Clearance distance

U^TR

6 000

V^peak

> 7.0

Creepage distance

> 7.0

Comparative tracking index (DIN IEC 112/VDE 0303 part 1)

Material group (DIN VDE 0109)

Storage temperature range

CTI

175

III a

T^stg

T^A

–55 to +150

–55 to +100

°C

Operating temperature range

Isolation resistance, minimum value

V^IO= 500 V dc at T^A= 25 °C

Ris MIN.

10¹²

10¹¹

Ω

V^IO= 500 V dc at T^AMAX. at least 100 °C

Safety maximum ratings (maximum permissible in case of fault, see thermal

derating curve)

Package temperature

Tsi

Isi

175

400

700

°C

Current (input current I^F, Psi = 0)

Power (output or total power dissipation)

Isolation resistance

Psi

V^IO= 500 V dc at T^A= 175 °C (Tsi)

Ris MIN.

10⁹

Ω

PS2561-1,-2,PS2561L-1,-2

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a

harmful substance if ingested. Please do not under any circumstances break the

hermetic seal.

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this

document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

PS2561L1-1 [NEC]

相关型号：

PS2561L1-1-A

PS2561L1-1-A

PS2561L1-1-A-L

PS2561L1-1-A-M

PS2561L1-1-A-W

PS2561L1-1-E3-H

PS2561L1-1-E3-L

PS2561L1-1-E3-Q

PS2561L1-1-E4-D

PS2561L1-1-E4-H

PS2561L1-1-E4-L

PS2561L1-1-E4-Q