NP90N03VUG-E2-AY [NEC]
Power Field-Effect Transistor, 90A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, MP-3ZP, 3 PIN;
| 型号： | NP90N03VUG-E2-AY |
| 厂家： | 
NEC |
| 描述： | Power Field-Effect Transistor, 90A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, MP-3ZP, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N03VUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N03VUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP90N03VUG-E1-AY
NP90N03VUG-E2-AY
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
Note
Note
Tape 2500 p/reel
TO-252 (MP-3ZP) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
• High current rating
(TO-252)
ID(DC) = 90 A
• Low input capacitance
Ciss = 5000 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
30
20
V
V
90
A
360
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
105
W
W
°C
°C
A
PT2
1.2
Tch
175
Storage Temperature
Tstg
−55 to +175
41
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
IAR
EAR
168
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.43
125
°C/W
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19544EJ1V0DS00 (1st edition)
Date Published November 2008 NS
Printed in Japan
2008
NP90N03VUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IDSS
VDS = 30 V, VGS = 0 V
1
μA
nA
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VDS = 25 V,
100
Gate to Source Threshold Voltage
2.0
25
3.0
51
4.0
V
S
Note
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Input Capacitance
2.5
3.2
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
5000 7500
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V,
600
420
32
900
760
64
f = 1 MHz
td(on)
tr
VDD = 15 V, ID = 45 A,
VGS = 10 V,
20
49
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 0 Ω
64
128
30
13
Total Gate Charge
QG
VDD = 24 V,
90
135
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V,
24
ID = 90 A
31
Note
Body Diode Forward Voltage
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V,
di/dt = 100 A/μs
0.9
42
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
ns
nC
Qrr
43
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
tr
td(off)
t
f
V
DD
t
on
t
off
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
IG
R
L
50 Ω
PG.
V
DD
2
Data Sheet D19544EJ1V0DS
NP90N03VUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
125
100
75
50
25
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(pulse)
I
D(DC)
DC
1 ms
1
10 ms
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
R
th(ch-A) = 125°C/W
th(ch-C) = 1.43°C/W
1
0.1
0.01
Single Pulse
100 1000
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
Data Sheet D19544EJ1V0DS
3
NP90N03VUG
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
400
300
200
100
0
1000
100
T
ch = −55°C
−25°C
25°C
10
1
75°C
0.1
125°C
150°C
175°C
0.01
0.001
0.0001
V
GS = 10 V
VDS = 10 V
Pulsed
Pulsed
0
1
2
3
4
5
6
0
0.2 0.4 0.6 0.8
1
1.2 1.4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
5
4
3
2
1
0
100
10
1
125°C
150°C
175°C
T
ch = −55°C
−25°C
25°C
75°C
V
DS = 5 V
V
DS = VGS
= 250 μA
Pulsed
I
D
-75
-25
25
75
125
175
225
0.1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
6
I
D
= 45 A
V
GS = 10 V
Pulsed
Pulsed
5
4
3
2
1
0
5
4
3
2
1
0
0
4
8
12
16
20
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D19544EJ1V0DS
NP90N03VUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
6
100000
V
GS = 10 V
= 45 A
I
D
5
4
3
2
1
0
10000
1000
100
C
iss
C
oss
C
rss
V
GS = 0 V
Pulsed
175
f = 1 MHz
-75
-25
25
75
125
225
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
1000
100
10
10
8
V
DD = 24 V
15 V
40
30
20
10
0
6 V
t
t
d(off)
6
t
d(on)
V
GS
4
t
r
f
V
V
DD = 15 V
GS = 10 V
R = 0 Ω
2
V
DS
D
I = 90 A
G
0
1
0
20
40
60
80
100
0.1
1
10
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
100
10
0 V
VGS = 10 V
1
0.1
0.01
0.001
V
GS = 0 V
di/dt = 100 A/μs
Pulsed
1.5
10
0
0.5
1
0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D19544EJ1V0DS
5
NP90N03VUG
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZP)
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
4
1.13
1
2
3
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D19544EJ1V0DS
NP90N03VUG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
Abbreviation of part number
90N03
Pb-free plating marking
UG
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP90N03VUG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19544EJ1V0DS
7
NP90N03VUG
•
The information in this document is current as of November, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
•
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•
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M8E 02. 11-1
相关型号：
NP90N04MUG-S18-AY
Power Field-Effect Transistor, 90A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN
NEC
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