NP80N03KLE [NEC]
SWITCHING N-CHANNEL POWER MOS FET; 切换N沟道功率MOS FET
| 型号： | NP80N03KLE |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
PART NUMBER
NP80N03CLE
NP80N03DLE
NP80N03ELE
NP80N03KLE
PACKAGE
TO-220AB
TO-262
FEATURES
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
• Channel Temperature 175 degree rated
• Super Low On-state Resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2600 pF TYP.
★
(TO-220AB)
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT
30
V
V
±20
±80
A
Drain Current (Pulse) Note2
A
±320
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
1.8
W
W
°C
°C
A
(TO-262)
PT
120
Tch
175
Storage Temperature
Tstg
–55 to +175
50 / 40 / 9
2.5 / 160 / 400
Single Avalanche Current Note3
Single Avalanche Energy Note3
IAS
EAS
mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
(TO-263)
2. PW ≤ 10 µs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.25
83.3
°C/W
°C/W
Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
Date Published December 2002 NS CP(K)
Printed in Japan
D14032EJ4V0DS00 (4th edition)
The mark ★ shows major revised points.
1999, 2000
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
SYMBOL
IDSS
TEST CONDITIONS
VDS = 30 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±10
2.5
µA
µA
V
IGSS
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 40 A
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 40 A
VGS = 4.5 V, ID = 40 A
VDS = 25 V
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
1.5
20
2.0
41
S
Drain to Source On-state Resistance
5.3
6.8
7.5
7.0
9.0
11
mΩ
mΩ
mΩ
pF
pF
pF
ns
Input Capacitance
2600 3900
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V
590
270
20
12
60
14
48
28
10
14
1.0
34
22
890
490
44
Crss
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 15 V, ID = 40 A
VGS = 10 V
31
ns
Turn-off Delay Time
Fall Time
RG = 1 Ω
120
35
ns
ns
Total Gate Charge 1
Total Gate Charge 2
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QG1
VDD = 24 V, VGS = 10 V, ID = 80 A
VDD = 24 V
72
nC
nC
nC
nC
V
QG2
42
QGS
VGS = 5 V
QGD
VF(S-D)
trr
ID = 80 A
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V
di/dt = 100 A/µs
ns
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
PG.
50 Ω
V
DD
V
DD
V
GS = 20→0V
DS
90%
d(on)
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25 50 75 100 125 150 175 200
0
25 50 75 100 125 150 175 200
- Case Temperature - ˚C
T
C
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Figure3. FORWARD BIAS SAFE OPERATING AREA
450
400
350
300
250
200
150
100
50
1000
100
10
400 mJ
I
D(pulse)
I
D(DC)
P
o
w
Limiteedr Dissipation
I
AS = 9 A
40 A
50 A
160 mJ
1
T
C
= 25˚C
Single pulse
2.5 mJ
50
0.1
0.1
0
1
10
100
25
75
100
125
150
175
VDS
-
Drain to Source Voltage - V
Starting Tch - Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 1.25˚C/W
1
0.1
0.01
Single pulse
100 1000
µ
10
1 m
10 m
100 m
1
10
100
µ
PW - Pulse Width - s
3
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
400
350
300
250
200
150
100
50
Pulsed
Pulsed
V
GS = 10 V
100
5 V
10
1
T
A
= −50˚C
25˚C
75˚C
150˚C
175˚C
4.5 V
0
0.1
4.0
2.0
0.0
1.0
3.0
1
2
5
6
3
4
VDS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
50
V
DS = 10 V
Pulsed
Pulsed
40
30
20
10
10
T
A
= 175˚C
75˚C
25˚C
1
0.1
−50˚C
ID = 40 A
0.01
0.01
0
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18
I
D
- Drain Current - A
VGS - Gate to Source Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
RESISTANCE vs. DRAIN CURRENT
Pulsed
3.0
V
DS = V
GµS
30
20
I
D
= 250 A
2.5
2.0
1.5
1.0
V
GS = 4.5 V
5 V
10 V
10
0
0.5
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
Tch - Channel Temperature - ˚C
4
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
CHANNEL TEMPERATURE
12
10
1000
100
10
Pulsed
Pulsed
VGS = 4.5 V
5 V
10 V
V
GS = 10 V
8
6
4
2
0
V
GS = 0 V
1
I
D
= 40 A
150
ch - Channel Temperature - ˚C
100
0.1
0
50
−50
0
1.5
1.0
- Source to Drain Voltage - V
0.5
T
V
SD
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure15. SWITCHING CHARACTERISTICS
1000
100
10000
V
GS = 0 V
f = 1 MHz
t
f
Ciss
t
d(off)
1000
100
10
C
oss
rss
t
d(on)
C
10
1
t
r
0.1
1
10
100
0.1
1
10
100
ID - Drain Current - A
V
DS - Drain to Source Voltage - V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
16
14
12
10
8
40
35
30
25
20
15
10
5
1000
100
di/dt = 100 A/µs
V
GS = 0 V
V
GS
V
DD = 24 V
15 V
6 V
6
10
1
4
VDS
2
I
D
= 80 A
70 80
0
0
0
10
20 30 40 50
60
0.1
1
10
100
Q
G
- Gate Charge - nC
I
F
- Drain Current - A
5
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
1.3±0.2
φ
3.6±0.2
10 TYP.
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.8±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
2.Drain
4.Fin (Drain)
3.Source
4.Fin (Drain)
★
3) TO-263 (MP-25ZJ)
4) TO-263 (MP-25ZK)
4.8 MAX.
10 TYP.
10.0±0.3
4.45±0.2
1.3±0.2
1.3±0.2
No plating
7.88 MIN.
4
4
0.025 to
0.25
1
2
3
1.4±0.2
0.7±0.2
0.5±0.2
0.75±0.2
2.54 TYP.
2.54 TYP.
2.54
0.25
1.Gate
1
2
3
2.Drain
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
EQUIVALENT CIRCUIT
Drain
Remark The diode connected between the gate and source of
the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit
is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Body
Diode
Gate
Gate
Protection
Diode
Source
7
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
•
The information in this document is current as of December, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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•
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•
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M8E 02. 11-1
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