概述
规格参数
数据手册NNCD3.3D-A 概述
暂无描述 瞬态抑制器
NNCD3.3D-A 规格参数
| 生命周期： | Transferred | 包装说明： | R-PDSO-G2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.50 |
| 风险等级： | 5.66 | 最大击穿电压： | 3.5 V |
| 最小击穿电压： | 3.1 V | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 代码： | R-PDSO-G2 | JESD-609代码： | e6 |
| 最大非重复峰值反向功率耗散： | 85 W | 元件数量： | 1 |
| 端子数量： | 2 | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性： | UNIDIRECTIONAL |
| 最大功率耗散： | 0.2 W | 认证状态： | Not Qualified |
| 表面贴装： | YES | 技术： | AVALANCHE |
| 端子面层： | TIN BISMUTH | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
NNCD3.3D-A 数据手册
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PDF下载DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3D to NNCD12D
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
PACKAGE DIMENSIONS
(in millimeters)
2.5 ± 0.15
1.7 ± 0.1
Type NNCD3.3D to NNCD12D Series are into 2PIN Super Mini
Mold Package having allowable power dissipation of 200 mW.
FEATURES
•
Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
Cathode
Indication
•
APPLICATIONS
•
•
External interface circuit E.S.D protection.
Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
200 mW
Surge Reverse Power
Junction Temperature
Storage Temperature
PRSM
Tj
85 W (tT = 10 µs 1 pulse) Fig. 6
150 °C
Tstg
–55 °C to +150 °C
Document No. D11772EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
1996
©
NNCD3.3D to NNCD12D
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Dynamic
Note 1
Breakdown Voltage
Reverse Leakage
Capacitance
Ct (pF)
E.S.D Voltage
(kV)
Note 2
Impedance
VBR (V)
IR (µA)
Zz (Ω)
Type Number
TEST
TYP.
TEST
MIN.
MIN.
MAX.
IT (mA)
MAX.
IT (mA)
MAX.
VR (V)
CONDITION
CONDITION
NNCD3.3D
NNCD3.6D
NNCD3.9D
NNCD4.3D
NNCD4.7D
NNCD5.1D
NNCD5.6D
NNCD6.2D
NNCD6.8D
NNCD7.5D
NNCD8.2D
NNCD9.1D
NNCD10D
NNCD11D
NNCD12D
3.10
3.40
3.70
4.00
4.40
4.82
5.29
5.84
6.44
7.03
7.73
8.53
9.42
10.40
11.38
3.50
3.80
4.10
4.49
4.92
5.39
5.94
6.55
7.17
7.87
8.67
9.58
10.58
11.60
12.64
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
130
130
130
130
130
130
80
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
20
10
10
10
10
5
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
220
210
200
180
170
160
140
120
110
90
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
5
VR = 0 V
f = 1 MHz
50
5
30
2
30
2
30
2
90
30
2
90
30
2
80
30
2
70
35
2
70
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3D to NNCD12D
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
200
150
100
50
30 × 30 × 1.6
P.C.B. (Glass Epoxy)
0
0
25
50
75
100
125
150
TA
- Ambient Temperature - °C
Fig. 2 I
T
- VBR CHARACTERISTICS
Fig. 3 I
T
- VBR CHARACTERISTICS
NNCD11D
NNCD7.5D
NNCD8.2D
NNCD6.8D
NNCD9.1D
100 m
10 m
1 m
100 m
10 m
1 m
NNCD10D
NNCD3.3D
NNCD3.6D
NNCD3.9D
NNCD4.3D
NNCD12D
NNCD4.7D
100
10
1
100
10
1
µ
µ
µ
µ
µ
µ
NNCD5.1D
NNCD5.6D
100 n
10 n
1 n
100 n
10 n
1 n
NNCD6.2D
0
1
2
3
4
5
6
7
8
9 10
0
7
8
9 10 11 12 13 14 15
V
BR - Breakdown Voltage - V
VBR - Breakdown Voltage - V
3
NNCD3.3D to NNCD12D
Fig. 4 Z
Z
- I
T
CHARACTERISTICS
1 000
100
TYP.
NNCD3.9D
NNCD4.7D
NNCD5.1D
NNCD5.6D
NNCD10D
NNCD7.5D
10
1
0.1
1
10
100
IT - On State Current - mA
Fig. 5 TRANSIENT THERMAL IMPEDANCE
5 000
1 000
625 °C/W
100
NNCD [ ] D
10
5
1 m
10 m
100 m
1
10
100
t - Time - s
Fig. 6 SURGE REVERSE POWER RATING
1 000
100
T
A
= 25 °C
Non-repetitive
t
T
NNCD [ ] D
10
1
1 µ
10 µ
100 µ
1 m
10 m
100 m
tT
- Pulse Width - s
4
NNCD3.3D to NNCD12D
Sample Application Circuits
SetNote
Conecter
Micro
com.
PC
Palallel
(CD ROM)
Interface
Interface Cable
Note Set
Printer, P.C.D, T.V Game etc.
5
NNCD3.3D to NNCD12D
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor device
C11745E
MEI-1201
C11531E
C10535E
MEI-1202
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor device
6
NNCD3.3D to NNCD12D
[MEMO]
7
NNCD3.3D to NNCD12D
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
NNCD3.3D-A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| NNCD3.3D-T1-AT | RENESAS | NNCD3.3D-T1-AT | 获取价格 |
|
| NNCD3.3D-T2 | RENESAS | 暂无描述 | 获取价格 |
|
| NNCD3.3D-T2-A | RENESAS | TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR | 获取价格 |
|
| NNCD3.3DA | RENESAS | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD | 获取价格 |
|
| NNCD3.3E | NEC | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE | 获取价格 |
|
| NNCD3.3E-A | NEC | Trans Voltage Suppressor Diode, 100W, Unidirectional, 1 Element, Silicon, MINIMOLD, SC-59, 3 PIN | 获取价格 |
|
| NNCD3.3F | NEC | ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD | 获取价格 |
|
| NNCD3.3F-A | NEC | Trans Voltage Suppressor Diode, 100W, Unidirectional, 2 Element, Silicon, MINIMOLD, SC-59, 3 PIN | 获取价格 |
|
| NNCD3.3F-L | RENESAS | NNCD3.3F-L | 获取价格 |
|
| NNCD3.3F-T2B | RENESAS | NNCD3.3F-T2B | 获取价格 |
|
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