NEZ3642-8DL [NEC]
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| 型号： | NEZ3642-8DL |
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NEC |
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PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (unit: mm)
0.5±0.1
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 Ω are
designed to provide good flatness of gain and output power
in allocated band.
C1.5 4PLACES
GATE
2.4
SOURCE
R1.6 2PLACES
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
DRAIN
17.0±0.2
21.0±0.3
SELECTION CHART
10.7
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
4.4 to 5.0
5.9 to 6.45
12.0
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
FEATURES
•
•
•
•
•
Internally matched to 50 Ω
High power output
High linear gain
High reliability
Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
©
4W/8W C-BAND POWER-GaAs FET NEZ Series
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
RATINGS
CHARACTERISTIC
SYMBOL
UNIT
NEZ-4D, 4DD
NEZ-8D, 8DD
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
VDS
VGS
VGD
ID
15
15
V
V
– 12
–12
– 18
– 18
V
4.5
9.0
A
Gate Current
IG
25
25
50
50
mA
W
˚C
˚C
Total Power Dissipation
Channel Temperature
Storage Temperature
PT*
Tch
Tstg
175
175
– 65 to + 175
– 65 to + 175
*TC = 25 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
IDSS
Part No.
NEZ-4D
MIN.
1.0
2.0
– 3.5
– 3.5
—
TYP.
2.3
MAX.
UNIT
TEST CONDITIONS
VDS = 2.5 V, VGS = 0 V
3.5
7.0
– 0.5
– 0.5
—
Saturated Drain Current
A
V
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
4.5
– 2.0
– 2.0
1300
2600
22
VDS = 2.5 V, IDS = 15 mA
VDS = 2.5 V, IDS = 30 mA
VDS = 2.5 V, IDS = 1 A
VDS = 2.5 V, IDS = 2 A
IGD = 15 mA
Pinch-off Voltage
VP
gm
Trans-Conductance
Gate to Drain Voltage
Thermal Resistance
mS
V
—
—
20
—
BVGD0
Rth
20
22
—
IGD = 30 mA
—
5.0
6.0
3.0
˚C/W
Channel to Case
—
2.5
2
4W/8W C-BAND Power-GaAs FET NEZ Series
4W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 Ω)
P1dB
GL
IDS
GL
IM3
ηadd
TEST CONDITIONS
IDS FREQUENCY IM3 TEST
(dBm)
(dB)
(A)
(dB)
(dBc)
(%)
VDS
PART NUMBER
NEZ3642-4D
*1
*2
*3, 4
*4
(RF OFF)
(A)
BAND
(GHz)
FREQ.
*5
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V)
(GHz)
4.2
35.5 36.5 10.0 11.0 1.2
1.5
1.5
1.5
1.5
1.5
1.5
1.0 – 45 – 42 43
1.0 – 45 – 42 40
1.0 – 45 – 42 37
1.0 – 45 – 42 35
1.0 – 45 – 42 33
1.0 – 45 – 42 33
10
10
10
10
10
10
0.8
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
NEZ4450-4D, 4DD 35.5 36.5 9.5 10.5 1.2
NEZ5964-4D, 4DD 35.5 36.5 9.0 10.0 1.2
0.8
5.0
0.8
6.45
7.2
NEZ6472-4D, 4DD 35.5 36.5 8.0
NEZ7177-4D, 4DD 35.5 36.5 7.5
NEZ7785-4D, 4DD 35.5 36.5 7.0
9.0
8.5
8.0
1.2
1.2
1.2
0.8
0.8
7.7
0.8
8.5
Notes *1 Output power at 1dB gain compression point
*2 IDS values are specified at P1dB point.
*3 Gain flatness
*4 Applies to – 4DD option only
*5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 26dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
VDS max.
(V)
(Ω)
200
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3
4W/8W C-BAND POWER-GaAs FET NEZ Series
8W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 Ω)
P1dB
GL
IDS
GL
IM3
ηadd
TEST CONDITIONS
IDS FREQUENCY IM3 TEST
(dBm)
(dB)
(A)
(dB)
(dBc)
(%)
VDS
PART NUMBER
*1
*2
*3, 4
*4
(RF OFF)
(A)
BAND
(GHz)
FREQ.
*5
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V)
(GHz)
4.2
NEZ3642-8D, 8DD 38.5 39.5 10.0 11.0 2.4
NEZ4450-8D, 8DD 38.5 39.5 9.5 10.5 2.4
3.0
3.0
3.0
3.0
3.0
3.0
1.0 – 45 – 42 40
1.0 – 45 – 42 37
1.0 – 45 – 42 35
1.0 – 45 – 42 32
1.0 – 45 – 42 30
1.0 – 45 – 42 30
10
10
10
10
10
10
1.6
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
1.6
5.0
NEZ5964-8D, 8DD 38.5 39.5 8.5
NEZ6472-8D, 8DD 38.5 39.5 7.5
NEZ7177-8D, 8DD 38.5 39.5 7.0
NEZ7785-8D, 8DD 38.5 39.5 6.5
9.5
8.5
8.0
7.5
2.4
2.4
2.4
2.4
1.6
6.45
7.2
1.6
1.6
7.7
1.6
8.5
Notes *1 Output power at 1dB gain compression point
*2 IDS values are specified at P1dB point.
*3 Gain flatness
*4 Applies to – 8DD option only
*5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 29dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
VDS max.
(V)
(Ω)
100
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
4
4W/8W C-BAND Power-GaAs FET NEZ Series
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
NEZ3642-4D
P
out
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
OUTPUT POWER vs. INPUT POWER
(dBm)
110
100
90
80
70
60
50
40
30
20
10
0
I
D
Test Conditions:
Freq = 3.9 (GHz),
P
out
(A)
V
P
DS = 10.0 (V), IDS = 0.8 (A),
out: Pin = 27.0 (dBm),
Infinite Heat sink
2
35
30
25
G
L: Pin = 20.0 (dBm),
Rg
= 200 (Ω)
I
D
1
0
–8D/–8DD
EFF
(%)
50
–4D/–4DD
EFF
40
30
20
10
0
0
25
50
75 100 125 150 175 200
15
20
25
T
C
- Case Temperature - ˚C
Pin - Input Power - dBm
NEZ3642-8D/8DD
NEZ4450-4D/4DD
P
out
P
out
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
(dBm)
(dBm)
I
D
I
D
Test Conditions:
Freq = 3.9 (GHz),
Test Conditions:
Freq = 4.7 (GHz), VDS = 10.0 (V),
40
(A)
(A)
P
out
Pout
VDS = 10.0 (V), IDS = 1.6 (A),
out: Pin = 31.0 (dBm),
I
D
= 0.80 A, Rg = 200 Ω
3
3
P
35
30
25
G
L
: Pin = 20.0 (dBm),
= 100 (Ω)
Rg
35
30
25
I
D
2
1
0
2
EFF
(%)
EFF
(%)
50
I
D
50
1
0
40
30
20
10
0
40
30
20
10
0
EFF
30
EFF
20
25
30
15
20
25
P
in - Input Power - dBm
Pin - Input Power - dBm
5
4W/8W C-BAND POWER-GaAs FET NEZ Series
NEZ4450-8D/8DD
P
out
OUTPUT POWER vs. INPUT POWER
(dBm)
I
D
Test Conditions:
Freq = 4.7 (GHz), VDS = 10.0 (V),
Pout
(A)
I
D
= 1.6 (A), Rg = 100 (Ω)
3 40
I
D
35
2
EFF
(%)
EFF
1 30
50
40
30
20
10
0
0
25
20
25
30
P
in - Input Power - dBm
NEZ5964-4D, 4DD
P
out
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
(dBm)
40
35
30
25
Test Conditions:
DS = 10 (V),
= 0.8 (A) (RF OFF),
= 200 (Ω)
I
D
Test Conditions:
DS = 10.0 (V), I
= 200 (Ω), f = 6.175 (GHz)
V
V
R
D = 0.8 (A) (RF OFF),
(A)
I
D
g
P
out
R
g
3
P
in = 28 dBm
35
30
25
2
EFF
(%)
50
P
in = 20 dBm
I
D
1
0
P
in = 18 dBm
40
30
20
10
0
EFF
15
20
25
30
5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
f - Frequency - GHz
P
in - Input Power - dBm
6
4W/8W C-BAND Power-GaAs FET NEZ Series
NEZ5964-8D, 8DD
Pout
(dBm)
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
ID
(A)
Test Conditions:
DS = 10.0 (V),
= 1.6 (A) (RF OFF),
= 100 (Ω),
Test Conditions:
VDS = 10.0 (V),
ID = 1.6 (A) (RF OFF)
Rg = 100 (Ω)
40
35
30
25
Pout
V
I
D
3
R
g
f = 6.175 (GHz)
40
Pin = 32 dBm
ID
2
1
0
35
30
EFF
(%)
Pin = 24 dBm
Pin = 22 dBm
50
EFF
40
30
20
10
0
20
25
30
35
5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
f - Frequency - GHz
Pin - Input Power - dBm
NEZ6472-4D, 4DD
Pout
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
(dBm)
40
ID
(A)
Test Conditions:
VDS = 10.0 (V),
ID = 0.8 (A) (RF OFF),
Rg = 200 (Ω)
Test Conditions:
VDS = 10.0 (V),
ID = 0.8 (A) (RF OFF),
Rg = 200 (Ω),
Pout
3
35
30
25
f = 6.8 (GHz)
Pin = 29 dBm
35
2
EFF
(%)
50
Pin = 20 dBm
Pin = 18 dBm
30
25
ID
1
0
40
30
20
10
0
EFF
20
25
30
5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8
f - Frequency - GHz
Pin - Input Power - dBm
7
4W/8W C-BAND POWER-GaAs FET NEZ Series
NEZ6472-8D, 8DD
P
out
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
(dBm)
I
D
Test Conditions:
DS = 10.0 (V),
= 1.6 (A) (RF OFF),
= 100 (Ω),
40
Test Conditions:
DS = 10.0 (V),
= 1.6 (A) (RF OFF)
= 100 (Ω)
V
(A)
V
I
D
ID
P
out
3
R
g
R
g
f = 6.8 (GHz)
40
35
30
25
P
in = 32 dBm
2
35
30
EFF
(%)
P
in = 24 dBm
in = 22 dBm
I
D
1
0
50
40
30
20
10
0
EFF
35
P
20
25
30
5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8
f - Frequency - GHz
P
in - Input Power - dBm
NEZ7177-4D/4DD
P
out
OUTPUT POWER vs. INPUT POWER
(dBm)
I
D
Test Conditions:
Freq = 7.40 (GHz),
(A)
Pout
VDS = 10.0 (V),
3
ID = 0.80 (A),
35
30
25
Rg = 200 (Ω)
2
EFF
(%)
50
1
0
I
D
40
30
20
10
0
EFF
20
25
30
P
in - Input Power - dBm
8
4W/8W C-BAND Power-GaAs FET NEZ Series
NEZ7177-8D/8DD
NEZ7785-4D/4DD
P
out
P
out
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
(dBm)
(dBm)
I
D
I
D
Test Conditions:
Freq = 7.4 (GHz),
Test Conditions:
Freq = 8.1 (GHz),
40
(A)
(A)
P
out
V
DS = 10.0 (V),
P
out
V
DS = 10.0 (V),
I
DS = 1.6 (A)
3
3
I
D
= 0.8 (A)
P
out: Pin = 33.5 (dBm),
Rg
= 200 (Ω)
35
30
25
G
R
L: Pin = 23.0 (dBm),
g
= 100 (Ω)
35
I
D
2
2
EFF
(%)
EFF
(%)
30
25
I
D
1
0
50
1
0
50
EFF
35
40
30
20
10
0
40
30
20
10
0
EFF
20
25
30
20
P
25
30
P
in - Input Power - dBm
in - Input Power - dBm
NEZ7785-8D/8DD
P
out
OUTPUT POWER vs. INPUT POWER
(dBm)
I
D
Test Conditions:
Freq = 8.1 (GHz),
40
(A)
P
out
D
V
DS = 10.0 (V),
D = 1.6 (A)
3
I
Rg
= 100 (Ω)
I
35
30
25
2
EFF
(%)
50
1
0
EFF
35
40
30
20
10
0
20
25
30
P
in - Input Power - dBm
9
4W/8W C-BAND POWER-GaAs FET NEZ Series
S-PARAMETER
NEZ3642-4D
VDS = 10 V, IDS = 800 mA, VGS = –1.486 V, IG = 0.0 mA, RG = 100 Ω
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
11.4
8.6
12.8
7.1
–2.6
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.250
2.500
2.750
3.000
3.200
3.300
3.400
3.500
3.600
3.700
3.800
3.900
4.000
4.100
4.200
4.300
4.400
4.500
4.600
4.700
4.800
5.000
6.000
0.957
0.957
0.960
0.968
0.954
0.931
0.911
0.878
0.827
0.749
0.699
0.685
0.676
0.664
0.638
0.594
0.523
0.427
0.315
0.194
0.162
0.295
0.455
0.590
0.697
0.781
0.830
0.840
0.980
–129.5
–158.1
171.4
142.4
112.3
78.9
11.354
6.114
2.444
1.231
0.949
1.034
104.3
82.7
43.0
–6.3
–50.2
–93.9
0.005
0.007
0.006
0.006
0.009
0.012
0.012
0.012
0.008
0.006
0.017
0.023
0.029
0.036
0.044
0.050
0.058
0.063
0.068
0.070
0.072
0.069
0.065
0.061
0.057
0.053
0.050
0.047
0.007
0.587
0.634
0.700
0.792
0.824
0.836
0.836
0.808
0.781
0.704
0.601
0.535
0.460
0.387
0.342
0.337
0.364
0.401
0.422
0.401
0.329
0.209
0.089
0.082
0.185
0.293
0.385
0.525
0.982
180.0
–179.7
173.2
156.5
134.9
111.9
98.5
–24.2
–50.6
–77.8
–133.1
109.4
38.8
57.5
28.8
1.233 –119.1
1.590 –148.5
82.7
–10.4
–64.1
–113.6
–138.9
–163.7
172.3
149.2
126.6
103.9
80.7
2.182
2.985
3.665
4.020
4.356
4.682
4.967
5.181
5.295
5.316
5.211
5.015 –119.5
4.877 –143.0
4.622 –168.2
4.219
3.774
3.344
3.016
2.715
2.300
0.316
174.7
130.2
90.3
63.7
39.3
12.8
69.3
18.4
–4.1
–3.5
47.7
–23.8
–50.4
–83.8
–122.0
–157.7
171.9
145.3
122.0
101.3
85.3
25.3
–27.0
–48.5
–71.4
–94.7
–119.1
–145.8
–173.0
158.6
129.5
104.2
80.8
2.0
–21.9
–46.3
–70.7
–95.4
54.5
15.8
–58.7
–119.5
–153.4
–176.1
165.3
149.2
135.4
110.0
95.5
166.7
144.1
122.1
101.5
82.0
42.9
165.9
91.7
172.8
–176.1
176.4
168.0
151.1
83.9
57.5
37.7
18.5
–16.7
158.6
NEZ4450-4DD
VDS = 10 V, IDS = 800 mA, VGS = –1.409 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.500
3.000
3.500
3.700
3.800
3.900
4.000
4.100
4.200
4.300
4.400
4.500
4.600
4.700
4.800
4.900
5.000
5.100
5.200
0.961
0.964
0.970
0.971
0.961
0.949
0.929
0.907
0.830
0.773
0.742
0.711
0.685
0.680
0.656
0.632
0.621
0.625
0.626
0.632
0.629
0.626
0.619
0.606
0.591
–116.2
–149.8
177.3
150.5
125.8
102.0
74.2
11.641
6.618
2.841
1.555
1.187
1.079
1.138
114.8
94.4
0.005
0.007
0.008
0.008
0.010
0.012
0.013
0.015
0.019
0.020
0.023
0.025
0.032
0.042
0.054
0.057
0.056
0.055
0.056
0.057
0.059
0.063
0.064
0.068
0.070
24.8
24.1
0.627
0.654
0.666
0.675
0.682
0.699
0.698
0.689
0.657
0.628
0.614
0.595
0.574
0.551
0.499
0.456
0.432
0.417
0.400
0.389
0.375
0.368
0.363
0.359
0.357
179.2
175.7
164.4
147.8
128.3
107.2
83.6
62.2
5.1
22.4
–6.1
–16.3
–55.1
–96.0
–22.0
–52.2
–91.6
–139.5
144.3
122.0
103.5
92.0
39.2
1.410 –142.0
57.8
–8.9
1.937
2.221
2.383
2.579
2.684
2.874
3.000
3.114
3.252
3.360
3.452
3.484
3.471
3.493
3.482
3.458
162.5
137.5
124.0
109.3
92.6
76.5
59.7
25.8
–33.7
–47.7
–63.6
–81.3
–100.6
–122.2
–142.8
–162.6
177.7
158.7
140.2
122.5
105.6
88.9
9.8
0.9
–9.3
69.8
–21.1
–34.2
–46.0
–57.1
–67.1
–79.0
–91.9
–104.7
–117.6
–129.5
–140.1
–150.1
–158.4
61.1
31.6
43.5
5.1
27.4
–14.4
–32.7
–47.9
–65.0
–79.0
–96.6
–114.0
–130.2
–148.7
10.2
–8.0
–25.4
–43.5
–60.9
–78.3
–96.9
72.2
54.0
3.463 –115.6
10
4W/8W C-BAND Power-GaAs FET NEZ Series
NEZ5964-4DD
VDS = 10 V, IDS = 800 mA, VGS = –1.327 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.200
4.400
4.600
4.800
5.000
5.200
5.400
5.600
5.800
6.000
6.200
6.400
6.600
6.800
7.000
0.947
0.958
0.964
0.968
0.963
0.961
0.951
0.960
0.975
0.967
0.958
0.939
0.912
0.890
0.859
0.816
0.748
0.656
0.542
0.420
0.345
0.377
0.470
0.528
0.540
–107.2
–142.9
–177.3
158.0
137.0
119.1
101.9
83.2
13.855
8.208
3.525
1.854
1.271
1.008
0.873
0.837
0.864 –112.9
0.942 –145.0
0.997 –158.1
1.060 –171.4
1.143
1.261
1.404
1.621
1.836
2.135
2.483
2.878
3.201
3.370
3.352
3.171
2.929
120.4
99.3
69.5
35.9
3.9
–25.9
–53.7
–82.8
0.007
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.012
0.016
0.018
0.013
0.014
0.018
0.023
0.029
0.034
0.043
0.055
0.064
0.077
0.086
0.090
0.091
0.088
36.0
15.4
3.2
0.633
0.661
0.674
0.693
0.708
0.734
0.750
0.761
0.763
0.752
0.750
0.733
0.717
0.704
0.684
0.632
0.590
0.541
0.466
0.377
0.274
0.200
0.193
0.221
0.241
–177.3
178.4
167.7
153.0
137.0
120.4
103.1
84.9
–16.8
–25.6
–41.1
–57.7
–79.9
–104.1
–128.7
–159.6
177.5
179.2
165.7
148.4
126.1
100.3
75.5
63.3
42.9
34.7
25.6
16.9
7.4
–3.7
65.7
45.3
36.4
27.1
18.2
8.5
–2.6
174.7
160.6
144.8
125.9
108.2
89.5
67.7
43.5
16.7
–12.7
–41.9
–68.6
–92.7
–14.2
–27.7
–45.2
–69.5
–104.4
–156.5
146.0
104.7
74.1
–13.1
–24.6
–39.4
–58.0
–81.3
–115.9
–165.7
140.5
99.9
49.0
19.8
–10.8
–44.0
–73.4
–101.6
–126.4
50.6
74.9
NEZ6472-4DD
VDS = 10 V, IDS = 800 mA, VGS = –1.458 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
3.000
4.000
4.500
5.000
5.500
6.000
6.200
6.300
6.400
6.500
6.600
6.700
6.800
6.900
7.000
7.100
7.200
7.300
7.400
0.942
0.958
0.963
0.968
0.960
0.955
0.949
0.930
0.872
0.749
0.590
0.528
0.562
0.580
0.600
0.613
0.617
0.604
0.580
0.552
0.506
0.470
0.404
0.342
0.271
–103.4
–141.0
–177.8
155.5
133.3
113.5
71.5
13.187
7.998
3.473
1.846
1.294
1.050
0.914
121.3
100.9
71.0
37.5
6.3
0.008
0.008
0.009
0.010
0.010
0.011
0.013
0.020
0.019
0.024
0.042
0.065
0.072
0.075
0.080
0.083
0.087
0.092
0.095
0.101
0.103
0.107
0.106
0.110
0.110
62.3
16.7
–0.6
0.625
0.677
0.691
0.701
0.709
0.726
0.748
0.756
0.759
0.728
0.645
0.484
0.395
0.345
0.305
0.265
0.234
0.218
0.204
0.211
0.224
0.240
0.244
0.254
0.248
179.6
177.2
166.6
151.7
134.5
118.8
84.7
48.6
28.0
5.8
–21.3
–59.5
–78.7
–90.2
–102.6
–117.9
–135.4
–154.9
–178.2
159.7
139.5
117.8
102.2
88.0
–12.2
–25.4
–41.3
–85.6
–148.4
161.2
127.1
71.5
–23.5
–82.4
23.9
–3.2
1.047 –147.7
1.262
1.547
2.027
2.631
2.849
2.907
3.002
3.061
3.134
3.189
3.195
3.245
3.167
174.5
134.8
88.7
33.8
9.7
–35.9
–87.0
–167.7
158.3
141.4
126.3
112.6
98.8
86.3
73.1
60.7
49.0
33.6
19.3
2.3
–17.1
7.7
–20.1
–32.9
–46.7
–59.1
–71.9
–83.9
–97.7
–110.3
–123.7
–138.5
–150.7
–163.6
–175.1
–3.5
–16.1
–28.6
–41.7
–54.2
–67.9
–81.2
–94.1
3.236 –108.6
3.152 –121.6
3.164 –135.6
3.068 –147.9
76.6
11
4W/8W C-BAND POWER-GaAs FET NEZ Series
NEZ7177-4DD
VDS = 10 V, IDS = 800 mA, VGS = –2.002 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
3.000
4.000
5.000
5.500
6.000
6.300
6.500
6.700
6.900
7.000
7.100
7.200
7.300
7.400
7.500
7.600
7.700
7.800
7.900
0.964
0.961
0.960
0.959
0.959
0.952
0.953
0.922
0.801
0.717
0.581
0.508
0.478
0.465
0.460
0.455
0.448
0.431
0.414
0.395
0.380
0.358
0.332
0.318
0.307
–96.7
–135.6
–173.9
162.3
138.5
119.9
80.9
13.227
8.162
3.583
2.441
1.299
1.092
0.864
126.5
104.3
73.2
41.5
9.9
0.007
0.008
0.009
0.011
0.013
0.014
0.016
0.015
0.021
0.031
0.045
0.055
0.058
0.066
0.072
0.074
0.079
0.080
0.088
0.087
0.098
0.098
0.104
0.104
0.108
39.2
19.7
10.4
1.0
–8.4
0.623
0.659
0.680
0.694
0.709
0.733
0.776
0.806
0.803
0.789
0.714
0.641
0.581
0.520
0.453
0.419
0.389
0.352
0.314
0.268
0.228
0.185
0.144
0.116
0.091
–178.2
178.3
168.7
154.4
140.2
124.1
92.1
–18.4
–74.8
–26.2
–61.8
–108.6
176.3
130.4
59.6
37.6
0.901 –134.7
58.5
19.8
–1.2
–19.0
–52.9
–105.9
–148.6
178.0
141.6
105.8
88.2
1.230
1.501
2.002
2.354
2.596
2.807
3.011
3.038
3.039
3.040
2.915
2.902
2.897 –106.9
2.841 –120.1
2.867 –132.6
2.819 –144.8
2.759 –158.7
157.3
121.3
74.0
42.3
19.0
–28.3
–45.5
–58.0
–71.1
–85.9
–93.3
–101.2
–112.1
–122.4
–134.4
–148.4
–164.4
175.5
150.4
117.1
17.8
–8.5
–5.1
–31.7
–54.5
–68.5
–77.6
–91.1
–102.8
–116.3
–128.8
–139.7
–155.7
–168.2
178.2
–31.2
–44.5
–57.8
–70.3
–82.9
–96.1
71.9
55.8
39.6
23.3
6.7
–10.2
–29.7
–49.5
–70.0
NEZ7785-4DD
VDS = 10 V, IDS = 800 mA, VGS = –1.324 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
6.700
6.900
7.100
7.300
7.500
7.700
7.900
8.100
8.300
8.500
8.700
0.960
0.957
0.956
0.958
0.957
0.955
0.942
0.955
0.963
0.956
0.914
0.869
0.801
0.689
0.559
0.515
0.490
0.495
0.510
0.527
0.547
0.544
0.526
0.496
0.456
0.419
–96.7
–135.4
–174.0
159.5
137.4
119.1
101.0
82.8
14.856
9.147
4.012
2.093
1.435
1.118
0.940
0.862
0.837
126.3
104.7
74.3
42.6
13.2
–14.5
–41.3
–67.2
–93.8
0.007
0.009
0.010
0.011
0.013
0.014
0.015
0.017
0.017
0.021
0.015
0.024
0.028
0.037
0.046
0.052
0.057
0.061
0.067
0.071
0.079
0.087
0.089
0.094
0.095
0.098
40.9
19.9
3.8
0.630
0.671
0.693
0.707
0.714
0.739
0.753
0.774
0.790
0.795
0.807
0.793
0.775
0.727
0.641
0.591
0.527
0.456
0.380
0.312
0.243
0.187
0.157
0.151
0.166
0.180
–177.3
179.0
168.6
155.4
141.0
125.8
109.6
94.3
–5.6
–11.0
–24.9
–39.7
–56.8
–77.7
–91.5
–113.4
–144.1
161.3
105.5
47.6
63.3
43.7
25.0
1.5
79.0
63.3
45.7
27.8
0.852 –121.5
0.868 –151.3
0.994
1.222
1.567
2.070
2.306
2.566
2.710
2.728
2.680
2.665
2.598
180.0
147.2
108.7
64.4
44.4
21.8
–26.8
–62.7
–114.9
–143.2
–176.0
149.6
115.1
85.0
58.0
33.6
10.9
–11.7
–34.2
–59.8
7.9
–14.7
–41.3
–53.1
–67.0
–80.1
–94.4
–110.4
–129.8
–156.4
168.7
123.7
84.0
24.8
4.1
–1.8
–19.0
–40.7
–63.5
–84.4
–107.1
–130.0
–151.8
–174.5
164.9
–26.7
–48.8
–71.1
–93.3
2.557 –114.8
2.479 –137.8
2.343 –159.7
2.277
179.9
54.3
12
4W/8W C-BAND Power-GaAs FET NEZ Series
NEZ3642-8D
VDS = 10 V, IDS = 1 600 mA, VGS = –1.618 V, IG = 0.0 mA, R
G
= 100 Ω
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.250
2.500
2.750
3.000
3.200
3.300
3.400
3.500
3.600
3.650
3.700
3.750
3.800
3.850
3.900
3.950
4.000
4.050
4.100
4.150
4.200
4.250
4.300
4.350
4.400
4.500
4.600
4.700
4.800
4.900
5.000
5.100
5.200
5.300
5.400
5.500
6.000
0.960
0.967
0.974
0.980
0.966
0.949
0.935
0.910
0.877
0.808
0.741
0.711
0.691
0.678
0.669
0.666
0.657
0.644
0.633
0.619
0.598
0.578
0.558
0.535
0.519
0.512
0.512
0.509
0.521
0.536
0.561
0.626
0.692
0.758
0.803
0.830
0.837
0.835
0.821
0.812
0.806
0.828
0.972
–154.1
–171.7
166.7
142.0
115.0
85.3
6.626
3.388
1.332
0.671
0.521
0.566
0.676 –108.9
0.881 –135.6
1.244 –169.0
1.828
2.439
2.782
3.111
3.422
3.684
3.788
3.871
3.920
3.978
3.987
4.003
3.984
3.950
3.907
3.855 –106.0
3.864 –117.9
3.886 –130.5
3.826 –144.1
3.711 –157.1
3.584 –170.4
3.413
3.071
2.720
2.446
2.181
1.955
1.759
1.593
1.435
1.278
1.111
0.969
92.5
76.5
41.8
–4.1
–45.2
–85.9
0.004
0.006
0.004
0.007
0.008
0.012
0.013
0.015
0.013
0.011
0.005
0.005
0.008
0.014
0.023
0.025
0.030
0.032
0.037
0.040
0.043
0.048
0.050
0.054
0.055
0.055
0.056
0.056
0.056
0.057
0.057
0.055
0.052
0.049
0.044
0.041
0.038
0.035
0.028
0.027
0.021
0.018
0.003
46.5
16.8
31.5
26.5
7.8
0.759
0.790
0.821
0.869
0.883
0.886
0.884
0.854
0.827
0.765
0.686
0.634
0.566
0.498
0.440
0.415
0.400
0.390
0.384
0.381
0.385
0.386
0.386
0.383
0.366
0.354
0.350
0.347
0.341
0.343
0.346
0.364
0.395
0.447
0.495
0.543
0.591
0.647
0.707
0.781
0.849
0.864
1.045
176.4
176.1
167.3
150.8
130.4
108.6
95.8
80.8
63.0
40.7
16.4
–14.4
–37.9
–57.5
–88.3
–133.2
163.2
96.7
67.0
43.1
10.9
–33.9
–79.7
–105.5
–132.9
–161.0
171.4
157.7
144.3
131.2
117.1
103.5
89.5
149.7
110.2
88.6
66.0
42.1
17.5
5.1
–7.4
–19.8
–32.6
–45.2
–57.5
–70.1
–82.3
–94.4
1.7
35.6
–0.1
–16.0
–37.7
–63.5
–78.2
–93.2
–108.1
–123.1
–138.1
–150.8
–163.2
–174.2
176.3
168.9
164.6
161.2
158.6
157.0
155.7
155.3
155.4
154.1
151.5
148.8
144.9
141.1
137.2
133.7
129.3
124.5
118.9
82.8
–32.0
–44.4
–58.9
–70.1
–83.9
–97.1
–109.7
–123.2
–135.9
–150.1
–163.2
–176.0
172.8
161.0
149.7
139.1
126.9
105.5
82.6
75.0
60.6
45.5
28.9
10.7
–9.2
–30.8
–51.1
–71.0
–89.2
–119.5
–144.7
–165.3
178.1
163.6
151.5
141.6
133.5
127.3
123.5
120.1
98.7
176.7
152.7
129.6
107.7
86.8
65.8
44.9
24.0
2.2
63.8
46.1
28.0
9.7
–7.0
–28.5
–42.1
–64.0
–95.8
–13.5
–20.2
–43.0
–78.2
0.263 –166.1
13
4W/8W C-BAND POWER-GaAs FET NEZ Series
NEZ4450-8DD
VDS = 10 V, IDS = 1 600 mA, VGS = –1.809 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.500
3.000
3.500
3.700
3.800
3.900
4.000
4.100
4.200
4.300
4.400
4.500
4.600
4.700
4.800
4.900
5.000
5.100
5.200
0.962
0.977
0.985
0.984
0.978
0.967
0.949
0.935
0.865
0.799
0.761
0.720
0.668
0.633
0.572
0.505
0.454
0.421
0.393
0.381
0.373
0.371
0.374
0.380
0.396
–147.3
–167.8
169.6
146.7
122.9
100.2
73.7
7.146
3.743
1.576
0.894
0.715
0.696
0.792
101.1
87.9
63.7
30.4
–4.6
0.002
0.004
0.005
0.008
0.011
0.013
0.016
0.018
0.022
0.022
0.025
0.028
0.035
0.045
0.050
0.051
0.051
0.052
0.054
0.056
0.059
0.062
0.063
0.064
0.067
14.6
24.1
25.3
20.9
1.7
0.776
0.802
0.804
0.793
0.771
0.748
0.702
0.642
0.559
0.521
0.505
0.487
0.480
0.474
0.438
0.406
0.389
0.380
0.371
0.365
0.356
0.348
0.337
0.321
0.295
176.8
173.6
162.0
144.4
124.1
102.8
79.1
53.7
22.8
7.2
–1.5
–12.4
–25.4
–40.1
–56.5
–71.7
–87.5
–104.9
–124.2
–142.9
–162.0
–179.6
163.3
146.6
129.6
–40.2
–78.7
–25.8
–55.9
–101.6
–161.5
169.5
150.0
133.9
107.0
88.4
41.3
–2.0
1.062 –123.3
1.601 –178.3
–24.4
–36.6
–50.9
–67.1
–86.2
–109.4
–133.6
–159.8
171.2
140.4
110.2
80.4
1.918
2.116
2.349
2.545
2.824
3.036
3.239
3.462
3.610
3.719
3.731
3.637
3.561
3.438
3.296
156.5
143.0
128.0
110.5
93.5
75.7
57.6
39.2
19.8
51.6
25.1
4.9
–14.9
–33.3
–54.6
–73.6
–93.7
–112.0
–130.0
–149.2
–1.1
–20.8
–40.5
–60.2
–78.2
–96.7
52.8
26.4
1.3
–23.5
3.194 –115.0
NEZ5964-8DD
VDS = 10 V, IDS = 1 600 mA, VGS = –1.644 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.200
4.400
4.600
4.800
5.000
5.200
5.400
5.600
5.800
6.000
6.200
6.400
6.600
6.800
7.000
0.952
0.975
0.980
0.985
0.977
0.972
0.962
0.967
0.974
0.944
0.923
0.892
0.853
0.798
0.718
0.623
0.507
0.421
0.414
0.465
0.481
0.421
0.301
0.146
0.083
–140.0
–163.2
173.5
152.3
131.5
113.2
95.1
8.776
4.698
1.952
1.045
0.746
0.625
0.580
0.604
0.684 –110.3
0.838 –145.8
0.934 –160.7
1.051 –176.4
1.230
1.433
1.675
1.996
2.362
2.777
3.134
3.374
3.426
3.344
105.5
90.6
67.4
37.5
7.3
–21.3
–48.9
–78.4
0.005
0.005
0.005
0.006
0.007
0.009
0.010
0.011
0.013
0.017
0.020
0.015
0.015
0.022
0.029
0.036
0.047
0.056
0.070
0.081
0.088
0.092
0.095
0.097
0.100
34.1
10.7
14.7
1.7
–4.4
0.799
0.805
0.808
0.813
0.811
0.823
0.821
0.821
0.814
0.799
0.796
0.778
0.796
0.779
0.751
0.705
0.628
0.519
0.367
0.205
0.132
0.228
0.333
0.394
0.412
179.0
175.7
166.4
152.5
138.4
123.6
108.2
91.8
74.5
55.8
47.5
38.5
–16.9
–35.9
–60.7
–87.0
–117.8
–152.6
–178.1
174.1
160.8
129.0
95.2
74.7
52.0
27.4
17.1
4.8
–6.4
165.2
146.9
126.6
103.8
79.0
51.2
20.6
–11.8
–44.5
–76.4
31.4
21.2
10.2
–1.8
–20.7
–38.0
–60.7
–92.1
–136.0
171.2
124.2
86.7
62.1
26.9
–7.9
–17.0
–34.9
–60.0
–97.7
–178.7
122.6
95.6
–43.4
–77.6
–108.7
–138.8
–167.8
164.6
55.6
27.3
–7.6
3.198 –107.4
3.000 –138.0
2.888 –168.8
75.3
57.6
–125.5
14
4W/8W C-BAND Power-GaAs FET NEZ Series
NEZ6472-8DD
VDS = 10 V, IDS = 1 100 mA, VGS = –1.686 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
5.800
6.000
6.200
6.400
6.500
6.600
6.700
6.800
6.900
7.000
7.100
7.200
7.400
0.971
0.975
0.981
0.985
0.978
0.973
0.962
0.972
0.984
0.973
0.955
0.862
0.720
0.606
0.532
0.477
0.464
0.472
0.486
0.491
0.488
0.475
0.442
0.420
0.364
0.247
–136.9
–161.5
174.4
153.4
133.4
115.9
98.3
8.298
4.465
1.859
0.991
0.703
0.579
0.520
0.516
0.547
106.7
92.4
69.8
41.4
13.5
–13.1
–39.2
–66.4
–95.1
0.004
0.005
0.005
0.007
0.008
0.010
0.011
0.012
0.014
0.019
0.015
0.020
0.030
0.037
0.047
0.057
0.070
0.076
0.082
0.088
0.093
0.100
0.103
0.105
0.104
0.106
–16.4
18.2
0.801
0.830
0.834
0.835
0.833
0.838
0.833
0.837
0.837
0.828
0.846
0.819
0.754
0.692
0.631
0.540
0.421
0.352
0.287
0.236
0.196
0.195
0.223
0.262
0.280
0.294
177.0
175.1
165.6
151.2
136.2
121.7
106.5
90.6
74.6
58.0
39.9
20.8
9.8
8.5
0.8
–13.9
–33.9
–50.9
–72.0
–104.8
–144.0
–175.3
120.1
80.1
79.4
59.3
38.6
16.7
0.615 –126.0
0.764 –160.9
–8.2
0.965
1.344
1.700
2.010
2.353
2.702
2.837
2.988
3.102
3.150
3.213
3.111
3.135
162.4
120.6
90.8
68.4
43.6
–42.1
–72.7
–101.1
–137.8
177.9
156.9
136.3
118.0
99.4
–0.4
–17.2
–31.4
–48.7
–71.0
–85.5
–103.1
–125.7
–156.8
168.9
139.5
112.6
94.7
54.0
22.0
15.3
0.8
–10.4
–25.8
–43.1
–58.6
–76.0
–91.9
–108.9
–126.6
–141.4
–171.1
–14.6
–29.8
–46.3
–62.6
–78.6
–95.5
82.3
67.0
49.1
33.2
3.012 –110.8
2.834 –141.5
–5.5
70.1
NEZ7177-8D/8DD
VDS = 10 V, IDS = 1 600 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
6.700
6.900
7.100
7.300
7.500
7.700
7.900
8.100
8.300
8.500
8.700
0.965
0.971
0.976
0.978
0.974
0.970
0.958
0.966
0.979
0.949
0.927
0.865
0.781
0.644
0.456
0.382
0.335
0.331
0.370
0.416
0.452
0.470
0.469
0.451
0.431
0.424
–134.9
–160.1
175.6
155.2
136.0
119.2
102.0
83.9
10.517
5.614
2.333
1.222
0.861
0.692
0.604
0.576
0.580
108.5
94.0
72.4
46.4
20.4
0.004
0.006
0.007
0.009
0.012
0.013
0.017
0.021
0.021
0.025
0.023
0.034
0.040
0.041
0.040
0.043
0.046
0.049
0.052
0.058
0.064
0.072
0.077
0.082
0.084
0.082
11.1
18.7
19.2
18.7
12.3
0.802
0.823
0.832
0.833
0.830
0.841
0.843
0.847
0.858
0.872
0.866
0.853
0.848
0.824
0.779
0.747
0.698
0.651
0.586
0.519
0.440
0.355
0.272
0.199
0.170
0.176
178.3
176.2
167.3
154.9
141.2
127.0
112.5
98.9
85.3
72.6
57.2
41.6
–4.1
–2.3
–28.3
–52.1
–77.3
–18.9
–30.6
–47.0
–64.9
–82.0
–110.7
–156.0
147.0
81.4
64.2
45.6
24.2
–0.2
0.590 –106.7
0.642 –133.2
0.757 –161.6
–28.9
–65.4
–118.8
–149.5
171.1
129.4
90.1
0.955
1.256
1.686
1.883
2.103
2.268
2.368
2.412
2.440
2.408
165.9
127.0
82.5
62.4
40.0
17.0
–7.1
–31.4
–55.1
–79.4
24.6
5.9
–16.8
–26.7
–38.0
–48.8
–61.5
–75.3
–91.6
–112.1
–138.9
–177.0
132.2
86.9
56.0
32.0
3.6
–22.0
–46.3
–69.1
–95.9
–120.6
–144.7
–169.9
170.0
55.7
27.0
0.1
–25.8
–51.7
–77.8
–103.6
2.375 –103.0
2.307 –127.7
2.140 –152.2
2.003 –174.2
15
4W/8W C-BAND POWER-GaAs FET NEZ Series
NEZ7785-8DD
VDS = 10 V, IDS = 1 600 mA, VGS = –1.349 V, IG = 0.0 mA
FREQUENCY
GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.000
2.000
5.000
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
6.700
6.900
7.100
7.300
7.500
7.700
7.900
8.100
8.300
8.500
8.700
0.965
0.971
0.976
0.978
0.974
0.970
0.958
0.966
0.979
0.949
0.927
0.865
0.781
0.644
0.456
0.382
0.335
0.331
0.370
0.416
0.452
0.470
0.469
0.451
0.431
0.424
–134.9
–160.1
175.6
155.2
136.0
119.2
102.0
83.9
10.517
5.614
2.333
1.222
0.861
0.692
0.604
0.576
0.580
108.5
94.0
72.4
46.4
20.4
0.004
0.006
0.007
0.009
0.012
0.013
0.017
0.021
0.021
0.025
0.023
0.034
0.040
0.041
0.040
0.043
0.046
0.049
0.052
0.058
0.064
0.072
0.077
0.082
0.084
0.082
11.1
18.7
19.2
18.7
12.3
0.802
0.823
0.832
0.833
0.830
0.841
0.843
0.847
0.858
0.872
0.866
0.853
0.848
0.824
0.779
0.747
0.698
0.651
0.586
0.519
0.440
0.355
0.272
0.199
0.170
0.176
178.3
176.2
167.3
154.9
141.2
127.0
112.5
98.9
85.3
72.6
57.2
41.6
–4.1
–2.3
–28.3
–52.1
–77.3
–18.9
–30.6
–47.0
–64.9
–82.0
–110.7
–156.0
147.0
81.4
64.2
45.6
24.2
–0.2
0.590 –106.7
0.642 –133.2
0.757 –161.6
–28.9
–65.4
–118.8
–149.5
171.1
129.4
90.1
0.955
1.256
1.686
1.883
2.103
2.268
2.368
2.412
2.440
2.408
165.9
127.0
82.5
62.4
40.0
17.0
–7.1
–31.4
–55.1
–79.4
24.6
5.9
–16.8
–26.7
–38.0
–48.8
–61.5
–75.3
–91.6
–112.1
–138.9
–177.0
132.2
86.9
56.0
32.0
3.6
–22.0
–46.3
–69.1
–95.9
–120.6
–144.7
–169.9
170.0
55.7
27.0
0.1
–25.8
–51.7
–77.8
–103.6
2.375 –103.0
2.307 –127.7
2.140 –152.2
2.003 –174.2
16
4W/8W C-BAND Power-GaAs FET NEZ Series
[MEMO]
17
4W/8W C-BAND POWER GaAs FET NEZ Series
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
相关型号：
NEZ4450-15DL
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
NEC
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