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NESG210719-T1FB [NEC]

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3;

NESG210719-T1FB


元器件型号：	NESG210719-T1FB
生产厂家：	NEC
描述和应用：	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3 晶体晶体管
PDF文件：	总3页 (文件大小：116K)
下载文档：	下载PDF数据表文档文件
型号参数：NESG210719-T1FB参数

NESG210719-T1FB-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, S Band, Silicon Germanium, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN

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0 NEC

NESG2107M33

NECs NPN SILICON TRANSISTOR

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44 CEL

NESG2107M33-A

NECs NPN SILICON TRANSISTOR

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40 CEL

NESG2107M33-FB

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, M33, SUPER LEAD-LESS MINIMOLD PACKAGE-3

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0 NEC

NESG2107M33FB-A

RF SMALL SIGNAL TRANSISTOR

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0 RENESAS

NESG2107M33-T3-A

NECs NPN SILICON TRANSISTOR

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32 CEL

NESG2107M33-T3FB

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, M33, SUPER LEAD-LESS MINIMOLD PACKAGE-3

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0 NEC

NESG210833

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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17 NEC

NESG210833-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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16 NEC

NESG210833-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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17 NEC

NESG210833-T1B

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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14 RENESAS

NESG210833-T1B-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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9 NEC

NESG210833-T1B-A

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, MINIMOLD PACKAGE-3

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0 RENESAS

NESG210833-T1B-A-FB

TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

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0 RENESAS

NESG220033

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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10 NEC

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