NE687M33-T3FB [NEC]
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-3;
| 型号： | NE687M33-T3FB |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TRANSISTOR
NE687M33
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN SUPER LEAD-LESS MINIMOLD (M33)
FEATURES
•
Low noise
NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
3-pin super lead-less minimold (M33) package
•
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE687M33
50 pcs (Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
NE687M33-T3
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
5.0
V
V
3.0
2.0
30
V
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
90
Tj
150
−65 to +150
Tstg
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10342EJ02V0DS (2nd edition)
Date Published August 2003 CP(K)
The mark shows major revised points.
Printed in Japan
© NEC Compound Semiconductor Devices 2003
NE687M33
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
–
–
–
–
100
100
140
nA
nA
–
VEB = 1 V, IC = 0 mA
VCE = 1 V, IC = 10 mA
Note 1
hFE
70
110
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
10
7
12
9
–
–
GHz
dB
S21e2
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
NF
–
1.5
2.0
dB
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IC = 0 mA, f = 1 MHz
–
0.4
0.7
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
W2
Marking
hFE Value
70 to 140
2
Data Sheet PU10342EJ02V0DS
NE687M33
TYPICAL CHARACTERISTICS (TA = +25°C ,unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
200
150
0.6
0.5
0.4
Mounted on Glass Epoxy PCB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
0.3
0.2
0.1
100
90
50
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature TA (˚C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
VCE = 1 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
500 A
µ
400
450 A
µ
µ
A
350 A
µ
30
300
250
µ
A
A
25
20
µ
µ
µ
200
150
A
A
15
10
5
µ
µ
100
A
A
IB = 50
0
1
2
3
4
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10342EJ02V0DS
NE687M33
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 1 V
VCE = 2 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10342EJ02V0DS
NE687M33
PACKAGE DIMENSIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm)
0.64 0.05
0.44 0.05
(Bottom View)
2
3
1
0.15
NE package code: M33
SOT number: –
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
5
Data Sheet PU10342EJ02V0DS
NE687M33
•
The information in this document is current as of August, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
6
Data Sheet PU10342EJ02V0DS
NE687M33
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
E-mail: salesinfo@csd-nec.com (sales and general)
techinfo@csd-nec.com (technical)
http://www.ncsd.necel.com/
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
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California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0307
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