MPC8217TU-E2 [NEC]
Narrow Band Low Power Amplifier, 1800MHz Min, 2000MHz Max, LEAD LESS, MINIMOLD-8;
| 型号： | MPC8217TU-E2 |
| 厂家： | 
NEC |
| 描述： | Narrow Band Low Power Amplifier, 1800MHz Min, 2000MHz Max, LEAD LESS, MINIMOLD-8 射频 微波 |
| 文件： | 总11页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8217TU
SILICON MMIC LNA + MIX IC FOR 1.9 GHz PHS
DESCRIPTION
The µPC8217TU is a silicon monolithic integrated circuit designed for use as LNA (Low Noise Amplifier) + Mixer for
1.9 GHz PHS. This IC manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.
This device is packaged in surface mount 8-pin lead-less minimold package.
FEATURES
•
•
•
•
Low noise
: NF = 4.2 dBm TYP.
: CG = 22.5 dB TYP.
: ICC = 11.5 mA TYP.
High Gain
Low Current Consumption
Packaged in 8-pin lead-less minimold (2.0 × 2.2 × 0.5 mm) suitable for high-density surface mounting
APPLICATION
•
1.9 GHz applications (Example : PHS etc.)
ORDERING INFORMATION
Part Number
Package
Marking
8217
Supplying Form
• Embossed tape 8 mm wide
µ PC8217TU-E2
8-pin lead-less minimold
• Pin 5, 6, 7, 8 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPC8217TU
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10479EJ01V0DS (1st edition)
Date Published September 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
µPC8217TU
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
1
2
3
4
8
7
6
5
LNAin
LNAout
RFin
VCC
MIX
GND
IFout
GND
LOin
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage (LNA)
Symbol
VCC (LNAout)
VCC (IFout)
ICC
Test Conditions
Ratings
3.6
Unit
V
Supply Voltage (MIX)
3.6
V
Circuit Current
23
mA
dBm
dBm
°C
Maximum Input Power (LNA)
Maximum Input Power (MIX)
Operating Ambient Temperature
Storage Temperature
PLNAin
PLOin
+10
+10
TA
−30 to +70
−55 to +150
1.06
Tstg
°C
Power Dissipation of Package
PD
Note
W
Note Mounted on 33 × 21 × 0.4 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage (LNA)
Supply Voltage (MIX)
Symbol
VCC (LNAout)
VCC (IFout)
TA
Test Conditions
MIN.
2.7
TYP.
3.0
MAX.
3.3
Unit
V
2.7
3.0
3.3
V
Operating Ambient Temperature
RF Input Frequency (MIX)
Local Input Power
−30
1.8
+25
1.9
+70
2.0
°C
fRFin
GHz
dBm
PLOin
−15
−10
−5
2
Data Sheet PU10479EJ01V0DS
µPC8217TU
ELECTRICAL CHARACTERISTICS (VCC = 3.0 V, TA = +25°C, ZS = ZL = 50 Ω, fRF = 1.9 GHz, fIF = 240
MHz, fLO = 1.66 GHz, PLO = −10 dBm, unless otherwise specified)
Parameter
Current Consumption
Symbol
ICC
Test Conditions
MIN.
8.5
TYP.
11.5
22.5
4.2
MAX.
15.0
27.5
5.3
Unit
mA
dB
No Signal
Convertion Gain
Noise Figure
CG
PRFin = −35 dBm
17.2
−
NF
SSB
dB
Input 3rd Order Distortion Intercept
Point
IIP3
fRF1 = 1.9 GHz, fRF2 = 1.9006 GHz,
−17
−15
−
dBm
PRF = −35 dBm/tone
Image Rejection Ratio
IMR
fRF1 = 1.9 GHz, fRF2 = 1.42 GHz,
30
40
−
36
50
−
−
−
dBc
dBc
dBm
PRF = −35 dBm/tone
1/2 IF Ratio
1/2 IFR fRF1 = 1.9 GHz, fRF2 = 1.78 GHz,
PRF = −35 dBm/tone, 240 MHz out
Local Leak
LoLeak RF Port
−49
3
Data Sheet PU10479EJ01V0DS
µPC8217TU
TEST CIRCUIT
1 F
µ
3 V
4.7 nH
3.9 nH
RFin
1 pF
0.75 pF 0.75 pF
0.5 pF
0.5 pF
1 F
µ
5.6 nH
3 V
6.8 nH
LOin
100 nH
18 pF
100 nH
IFout
6 pF
100 pF
2 pF
100 nH
82 nH
3 V
18 pF
1 F
µ
4
Data Sheet PU10479EJ01V0DS
µPC8217TU
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
NOISE FIGURE
vs. LOCAL INPUT POWER
CONVERTION GAIN
vs. LOCAL INPUT POWER
7
6
5
4
3
30
25
20
15
10
V
CC = 3.3 V
3.0 V
2.7 V
V
CC = 2.7 V
3.0 V
3.3 V
f
RF = 1.9 GHz,
f
RF = 1.9 GHz,
LO = 1.66 GHz
P
RF = –35 dBm,
f
f
LO = 1.66 GHz
2
–15
–10
–5
0
–25
–20
–15
–10
–5
0
Local Input Power PLOin (dBm)
Local Input Power PLOin (dBm)
IMAGE REJECTION RATIO
vs. LOCAL INPUT POWER
IMAGE REJECTION RATIO
vs. RF INPUT POWER
40
35
30
25
40
35
30
25
20
V
CC = 3.3 V
3.0 V
V
CC = 2.7 V
3.0 V
2.7 V
3.3 V
f
f
RFdes = 1.9 GHz,
f
f
RFdes = 1.9 GHz,
RFundes = 1.42 GHz,
RFundes = 1.42 GHz,
P
RF = –35 dBm,
P
LO = –10 dBm,
f
LO = 1.66 GHz,
–10
Local Input Power PLOin (dBm)
fLO = 1.66 GHz,
0
0
–15
–5
–40 –35 –30 –25 –20 –15 –10
–5
RF Input Power PRFin (dBm)
1/2 IF Ratio vs. LOCAL INPUT POWER
1/2 IF Ratio vs. RF INPUT POWER
65
80
70
60
50
40
30
20
10
V
CC = 3.0 V
60
55
50
45
40
35
V
CC = 2.7 V
3.0 V
3.3 V
f
f
RFdes = 1.9 GHz,
f
f
RFdes = 1.9 GHz,
RFundes = 1.78 GHz,
RFundes = 1.78 GHz,
P
RF = –35 dBm,
P
LO = –10 dBm,
f
LO = 1.66 GHz,
–10
Local Input Power PLOin (dBm)
f
LO = 1.66 GHz,
–35 –30
0
–20 –15 –10
–5
0
–15
–5
–40
–25
RF Input Power PRFin (dBm)
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10479EJ01V0DS
µPC8217TU
IF OUTPUT POWER, IM
vs. RF INPUT POWER
3
IF OUTPUT POWER, IM
vs. RF INPUT POWER
3
10
0
10
0
VCC = 2.7 V
VCC = 3.0 V
–10
–20
–30
–40
–50
–60
–70
–10
–20
–30
–40
–50
–60
–70
IM3L, IFdes
IM3L, IFdes
IM3H, IFundes
IM3H, IFundes
f
RFdes = 1.9 GHz,
RFundes = 1.9006 GHz,
f
RFdes = 1.9 GHz,
f
f
RFundes = 1.9006 GHz,
P
LO = –10 dBm,
P
LO = –10 dBm,
f
LO = 1.66 GHz,
–20 –15
f
LO = 1.66 GHz,
–40
–35
–30
–25
–10
–40
–35
–30
–25
–20 –15
–10
RF Input Power PRFin/tone (dBm)
RF Input Power PRFin/tone (dBm)
IF OUTPUT POWER, IM
vs. RF INPUT POWER
3
IF OUTPUT POWER, IM
vs. RF INPUT POWER
3
10
0
10
0
VCC = 3.3 V
–10
–20
–30
–40
–50
–60
–70
–10
–20
–30
–40
–50
–60
–70
IM3L, IFdes
IM3L, IFdes
IM3H, IFundes
IM3H, IFundes
f
= 1.88 GHz,
fRFdes = 1.8806 GHz,
f
RFdes = 1.9 GHz,
RFundes = 1.9006 GHz,
LO = –10 dBm,
LO = 1.66 GHz,
RFun=des–10 dBm,
f
P
P
f
LOLO= 1.64 GHz,
f
VCC = 3.0 V
–40
–35
–30
–25
–20 –15
–10
–30
–10
–40
–35
–25
–20 –15
RF Input Power PRFin/tone (dBm)
RF Input Power PRFin/tone (dBm)
IF OUTPUT POWER, IM
vs. RF INPUT POWER
3
10
0
–10
–20
–30
–40
–50
–60
–70
IM3L, IFdes
IM3H, IFundes
f
= 1.92 GHz,
fRFdes = 1.9206 GHz,
P
RFun=des–10 dBm,
f
LOLO= 1.68 GHz,
VCC = 3.0 V
–40
–35
–30
–25
–20
–15
–10
RF Input Power PRFin/tone (dBm)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10479EJ01V0DS
µPC8217TU
IIP vs. LOCAL INPUT POWER
3
IF OUTPUT POWER vs. RF INPUT POWER
–10
–11
–12
–13
–14
–15
–16
–17
–18
–19
–20
5
0
–5
V
CC = 3.3 V
3.0 V
2.7 V
–10
–15
–20
–25
–30
f
RFdes = 1.9 GHz,
f
RFundes = 1.9006 GHz,
f
RF = 1.9 GHz,
P
RF = –35 dBm,
P
LO = –10 dBm,
f
LO = 1.66 GHz,
fLO = 1.66 GHz
V
CC = 3.0 V
–15
–10
–5
0
–40
–10
–35 –30 –25 –20 –15
–5
0
Local Input Power PLOin (dBm)
RF Input Power PRFin (dBm)
CONVERTION GAIN vs. RF FREQUENCY
30
V
CC = 3.3 V
25
20
15
3.0 V
2.7 V
P
RF = –35 dBm,
LO = –10 dBm,
P
fIF = 240 MHz
1 870 1 880 1 890 1 900 1 910 1 920 1 930
RF Input frequency fRF (MHz)
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10479EJ01V0DS
µPC8217TU
PACKAGE DIMENSIONS
8-PIN LEAD-LESS MINIMOLD (UNIT: mm)
(Top View)
(Bottom View)
5
6
7
8
8
7
6
5
8217
0.16
1
2
3
4
0.25 0.25
0.75
0.75
4
3
2
1
2.0
8
Data Sheet PU10479EJ01V0DS
µPC8217TU
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Condition Symbol
IR260
Peak temperature (package surface temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
VP215
WS260
HS350
: 0.2%(Wt.) or below
Wave Soldering
Partial Heating
Peak temperature (molten solder temperature)
Time at peak temperature
: 260°C or below
: 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
: 0.2%(Wt.) or below
Maximum chlorine content of rosin flux (% mass)
Caution Do not use different soldering methods together (except for partial heating).
9
Data Sheet PU10479EJ01V0DS
µPC8217TU
•
The information in this document is current as of September, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
10
Data Sheet PU10479EJ01V0DS
µPC8217TU
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0406
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