HR1A3M [NEC]
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching; 片上电阻PNP硅外延晶体管中速开关![HR1A3M](http://pdffile.icpdf.com/pdf1/p00073/img/icpdf/HR1A3M_384512_icpdf.jpg)
型号: | HR1A3M |
厂家: | ![]() |
描述: | On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
文件: | 总6页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
•
Up to 2A high current drives such as IC outputs and actuators
available
•
•
On-chip bias resistor
Low power consumption during drive
HR1 SERIES LISTS
Products
HR1A3M
HR1F3P
HR1L3N
HR1A4,
Marking
MP
R1 (KΩ)
1.0
R2 (KΩ)
1.0
10
MQ
2.2
MR
4.7
10
MS
10
10
HR1L2Q
HR1F2Q
HR1A4A
MT
0.47
0.22
−
4.7
2.2
10
MU
MX
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
IB(DC)
PT **
Tj
Ratings
−60
Unit
V
−60
V
−10
V
−1.0
A
−2.0
A
−0.02
2.0
A
Total power dissipation
Junction temperature
Storage temperature
W
°C
°C
150
Tstg
−55 to +150
* PW ≤ 10 ms, duty cycle ≤ 50 %
** When 0.7 mm × 16 cm2 ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
HR1 SERIES
ꢁꢂꢃꢄꢅꢆ
ꢇꢈꢇꢉꢊꢂꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊꢏꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.4 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
50
100
50
−
DC current gain
−
DC current gain
−0.4
−0.3
1.3
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
0.7
0.7
1.0
1.0
E-to-B resistance
R2
1.3
ꢐꢐ ꢑꢒꢃ≤ꢃꢓꢔꢏꢃµꢕꢖꢃꢗꢘꢂꢙꢃꢚꢙꢚꢛꢆꢃ≤ꢃꢍꢃꢜ
ꢁꢂꢃꢓꢅꢔ
ꢇꢈꢇꢉꢊꢂꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊꢏꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.3 A
VCE = –5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
150
100
50
−
DC current gain
−
DC current gain
−0.3
−0.3
2.86
13
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
1.54
7
2.2
10
E-to-B resistance
R2
ꢐꢐ ꢑꢒꢃ≤ꢃꢓꢔꢏꢃµꢕꢖꢃꢗꢘꢂꢙꢃꢚꢙꢚꢛꢆꢃ≤ꢃꢍꢃꢜ
ꢁꢂꢃꢈꢅꢕ
ꢇꢈꢇꢉꢊꢂꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊꢏꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.2 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
150
100
50
−
DC current gain
−
DC current gain
−0.3
−0.3
6.11
13
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
3.29
7
4.7
10
E-to-B resistance
R2
ꢐꢐ ꢑꢒꢃ≤ꢃꢓꢔꢏꢃµꢕꢖꢃꢗꢘꢂꢙꢃꢚꢙꢚꢛꢆꢃ≤ꢃꢍꢃꢜ
ꢀ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢇꢉꢊꢋꢌꢍꢎꢏꢀꢄ
HR1 SERIES
ꢁꢂꢃꢄꢖꢆ
ꢇꢈꢇꢉꢊꢂꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊꢏꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.1 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
150
100
50
−
DC current gain
−
DC current gain
−0.2
−0.3
13
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
7
7
10
10
E-to-B resistance
R2
13
ꢐꢐ ꢑꢒꢃ≤ꢃꢓꢔꢏꢃµꢕꢖꢃꢗꢘꢂꢙꢃꢚꢙꢚꢛꢆꢃ≤ꢃꢍꢃꢜ
ꢁꢂꢃꢈꢀꢗ
ꢇꢈꢇꢉꢊꢂꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊꢏꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.5 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
150
100
50
−
DC current gain
−
DC current gain
−0.55
−0.3
611
Low level output voltage
Low level input voltage
Input resistance
V
V
Ω
329
470
4.7
kΩ
E-to-B resistance
R2
3.29
6.11
ꢐꢐ ꢑꢒꢃ≤ꢃꢓꢔꢏꢃµꢕꢖꢃꢗꢘꢂꢙꢃꢚꢙꢚꢛꢆꢃ≤ꢃꢍꢃꢜ
ꢁꢂꢃꢓꢀꢗ
ꢇꢈꢇꢉꢊꢂꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊꢏꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.5 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
100
100
50
−
DC current gain
−
DC current gain
−0.55
−0.3
286
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
154
220
2.2
E-to-B resistance
R2
1.54
2.86
ꢐꢐ ꢑꢒꢃ≤ꢃꢓꢔꢏꢃµꢕꢖꢃꢗꢘꢂꢙꢃꢚꢙꢚꢛꢆꢃ≤ꢃꢍꢃꢜ
ꢅ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢇꢉꢊꢋꢌꢍꢎꢏꢀꢄ
HR1 SERIES
ꢁꢂꢃꢄꢖꢄ
ꢇꢈꢇꢉꢊꢂꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊꢏꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
MIN.
TYP.
0.20
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
IC = −500 mA, IB = −10 mA
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VCE(sat) **
VIL **
R1
150
100
50
−
DC current gain
−
DC current gain
Collector saturation voltage
Low level input voltage
Input resistance
0.35
−1.5
−
V
−0.3
−
V
−
Ω
kΩ
E-to-B resistance
R2
7
10
13
ꢐꢐ ꢑꢒꢃ≤ꢃꢓꢔꢏꢃµꢕꢖꢃꢗꢘꢂꢙꢃꢚꢙꢚꢛꢆꢃ≤ꢃꢍꢃꢜ
ꢖ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢇꢉꢊꢋꢌꢍꢎꢏꢀꢄ
HR1 SERIES
ꢊꢘꢔꢋꢉꢄꢈꢌꢌꢉꢁꢄꢂꢄꢉꢊꢇꢂꢋꢍꢊꢋꢉꢍꢌꢌꢎꢊaꢌꢌꢐꢌꢌꢀꢑ°ꢉꢒ
ꢑ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢇꢉꢊꢋꢌꢍꢎꢏꢀꢄ
HR1 SERIES
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号:
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HR1A3M-T1
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PLASTIC, SC-62, 3 PIN
NEC
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