AQ1F3P-AZ [NEC]
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN;型号: | AQ1F3P-AZ |
厂家: | NEC |
描述: | Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN 晶体 晶体管 |
文件: | 总6页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
COMPOUND TRANSISTOR
AQ1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
PACKAGE DRAWING (UNIT: mm)
FEATURES
•
High current drives such as IC and motor solenoid available up
to 2 A
•
•
On-chip bias resistor
Low power consumption during drive
AQ1 SERIES LISTS
R1 (KΩ)
R2 (KΩ)
1.0
Products
AQ1L2N
AQ1A3M
AQ1F3M
AQ1F3P
AQ1L2Q
AQ1F2Q
AQ1A4A
0.47
1.0
2.2
2.2
0.47
0.22
−
1.0
2.2
Electrode Connection
10
1. Emitter
2. Collector JEDEC: TO-92
3. Base IEC : PA33
EIAJ : SC-43B
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
IB(DC)
PT
Ratings
−20
Unit
V
−20
V
−10
V
−2.0
A
−3.0
A
−0.04
750
A
Total power dissipation
Junction temperature
mW
°C
°C
Tj
150
−55 to +150
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10840EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
AQ1 SERIES
ꢁꢂꢃꢄꢀꢅ
ꢆꢄꢆꢇꢈꢉꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈꢏꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
−
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.7 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VCE(sat) **
VIL **
R1
50
150
50
−
DC current gain
−
DC current gain
−0.55
−0.3
611
Low level output voltage
Low level input voltage
Input resistance
V
V
Ω
329
0.7
470
1.0
kΩ
E-to-B resistance
R2
1.3
ꢏꢏ ꢐꢑꢃ≤ꢃꢒꢓꢈꢃµꢔꢕꢃꢖꢗꢂꢘꢃꢙꢘꢙꢚꢆꢃ≤ꢃꢍꢃꢛ
ꢁꢂꢃꢁꢓꢔ
ꢆꢄꢆꢇꢈꢉꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈꢏꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.5 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
50
150
50
−
DC current gain
−
DC current gain
−0.4
−0.3
1.3
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
0.7
0.7
1.0
1.0
E-to-B resistance
R2
1.3
ꢏꢏ ꢐꢑꢃ≤ꢃꢒꢓꢈꢃµꢔꢕꢃꢖꢗꢂꢘꢃꢙꢘꢙꢚꢆꢃ≤ꢃꢍꢃꢛ
ꢁꢂꢃꢕꢓꢔ
ꢆꢄꢆꢇꢈꢉꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈꢏꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
−
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.3 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
80
150
50
−
DC current gain
−
DC current gain
−0.3
−0.3
2.86
2.86
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
1.54
1.54
2.2
2.2
E-to-B resistance
R2
ꢏꢏ ꢐꢑꢃ≤ꢃꢒꢓꢈꢃµꢔꢕꢃꢖꢗꢂꢘꢃꢙꢘꢙꢚꢆꢃ≤ꢃꢍꢃꢛ
ꢀ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢉꢊꢈꢋꢌꢍꢎꢈꢀꢄ
AQ1 SERIES
ꢁꢂꢃꢕꢓꢖ
ꢆꢄꢆꢇꢈꢉꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈꢏꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.3 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
200
150
50
−
DC current gain
−
DC current gain
−0.3
−0.3
2.86
13
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
1.54
7
2.2
10
E-to-B resistance
R2
ꢏꢏ ꢐꢑꢃ≤ꢃꢒꢓꢈꢃµꢔꢕꢃꢖꢗꢂꢘꢃꢙꢘꢙꢚꢆꢃ≤ꢃꢍꢃꢛ
ꢁꢂꢃꢄꢀꢂ
ꢆꢄꢆꢇꢈꢉꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈꢏꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.7 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
150
150
50
−
DC current gain
−
DC current gain
−0.55
−0.3
611
Low level output voltage
Low level input voltage
Input resistance
V
V
Ω
329
470
4.7
kΩ
E-to-B resistance
R2
3.29
6.11
ꢏꢏ ꢐꢑꢃ≤ꢃꢒꢓꢈꢃµꢔꢕꢃꢖꢗꢂꢘꢃꢙꢘꢙꢚꢆꢃ≤ꢃꢍꢃꢛ
ꢁꢂꢃꢕꢀꢂ
ꢆꢄꢆꢇꢈꢉꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈꢏꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −5.0 A, IC = −0.7 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
80
150
50
−
DC current gain
−
DC current gain
−0.55
–0.3
286
Low level output voltage
Low level input voltage
Input resistance
V
V
Ω
154
220
2.2
kΩ
E-to-B resistance
R2
1.54
2.86
ꢏꢏ ꢐꢑꢃ≤ꢃꢒꢓꢈꢃµꢔꢕꢃꢖꢗꢂꢘꢃꢙꢘꢙꢚꢆꢃ≤ꢃꢍꢃꢛ
ꢓ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢉꢊꢈꢋꢌꢍꢎꢈꢀꢄ
AQ1 SERIES
ꢁꢂꢃꢁꢗꢁ
ꢆꢄꢆꢇꢈꢉꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈꢏꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −1.0 A, IC = −20 mA
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
200
150
50
−
DC current gain
−
DC current gain
−0.35
−0.45
–0.3
−
Collector saturation voltage
Low level input voltage
Input resistance
V
V
−
−
Ω
kΩ
E-to-B resistance
R2
7
10
13
ꢏꢏ ꢐꢑꢃ≤ꢃꢒꢓꢈꢃµꢔꢕꢃꢖꢗꢂꢘꢃꢙꢘꢙꢚꢆꢃ≤ꢃꢍꢃꢛ
ꢗ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢉꢊꢈꢋꢌꢍꢎꢈꢀꢄ
AQ1 SERIES
ꢈꢘꢖꢊꢇꢁꢄꢋꢋꢇꢌꢁꢉꢁꢇꢈꢆꢉꢊꢍꢈꢊꢇꢍꢋꢋꢎꢈaꢋꢋꢐꢋꢋꢀꢑ°ꢇꢒ
ꢑ
ꢀꢁꢂꢁꢃꢄꢅꢆꢆꢂꢃꢃꢀꢇꢈꢉꢊꢈꢋꢌꢍꢎꢈꢀꢄ
AQ1 SERIES
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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