AN1L3M-A [NEC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN;


型号：	AN1L3M-A
厂家：	NEC
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN 晶体小信号双极晶体管开关
文件：	总4页 (文件大小：86K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

COMPOUND TRANSISTOR

AN1L3M

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

On-chip bias resistor

(R¹= 4.7 kΩ, R²= 4.7 kΩ)

•

Complementary transistor with AA1L3M

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

−60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

−50

−10

−100

°C

−200

250

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50 %

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −50 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

V^CE= −5.0 V, I^C= −5.0 mA

V^CE= −5.0 V, I^C= −50 mA

I^C= −5.0 mA, I^B= −0.25 mA

V^CE= −5.0 V, I^C= −100 µA

V^CE= −0.2 V, I^C= −5.0 mA

h^FE1**

h^FE2**

V^CE(sat)**

V^IL**

V^IH**

R¹

110

−0.02

−1.1

−1.5

4.7

−

DC current gain

−0.3

−0.8

Collector saturation voltage

Low level input voltage

High level input voltage

Input resistance

−3.0

3.29

0.9

kΩ

−

6.11

1.1

0.5

3.0

5.0

Resistance ratio

R¹/R²

t^on

1.0

V^CC= −5 V, R^L= 1 kΩ

V^I= −5 V, PW = 2 µs

duty cycle≤2 %

µs

Turn-on time

Storage time

t^stg

Turn-off time

t^off

** PW ≤ 350 µs, duty cycle ≤ 2 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16168EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

AN1L3M

TYPICAL CHARACTERISTICS (T^a= 25°C)

Data Sheet D16168EJ1V0DS

AN1L3M

Data Sheet D16168EJ1V0DS

AN1L3M

•

The information in this document is current as of July, 2001. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

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•

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M8E 00. 4

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