AC10FSMA [NEC]
10 A RESIN INSULATION TYPE TRIAC; 10树脂绝缘型双向可控硅
| 型号： | AC10FSMA |
| 厂家： | 
NEC |
| 描述： | 10 A RESIN INSULATION TYPE TRIAC |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
THYRISTORS
AC10DSMA,AC10FSMA
10 A RESIN INSULATION TYPE TRIAC
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The AC10DSMA and AC10FSMA are resin insulation type
TRIACs with an effective current of 10 A (TC = 85°C).
These products are covered with resin mold on the entire case
and are electrically insulated with electrodes, giving them a
considerable advantage over conventional TRIACs when
mounting on a heatsink board or performing high-density
mounting.
4.7 MAX.
3.0 MAX.
10.5 MAX.
7
0.ꢀ
φ
3.ꢀ 0.ꢀ
*
1
ꢀ 3
These products features ratings and electrical characteristics
equal to TO-220AB package TRIAC and a high reliability design.
FEATURES
• Insulation type TRIAC fully covered with resin on the entire
case other than electrode leads
• Insulation voltage and conduction equal to conventional mica
and polyester film
• Can be replaced with TO-220AB package
• High allowable on-current when using a single unit
0.8 0.1
ꢀ.54 TYP.
1.3 0.ꢀ 0.5 0.1
1.5 0.ꢀ
ꢀ.5 0.1
TRIAC
ꢀ.54 TYP.
1: T
ꢀ: T
1
ꢀ
3: Gate
Standard weight: ꢀ g
: TC test bench-mark
*
APPLICATIONS
Non-contact switches of motor speed control, heater temperature control, lamp light control
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13661EJ4V0DS00 (4th edition)
The mark shows major revised points.
Date Published June 2004 NS CP(K)
Printed in Japan
2002
AC10DSMA,AC10FSMA
MAXIMUM RATINGS
Parameter
Symbol
VDSM
AC10DSMA
500
AC10FSMA
700
Unit
V
Remarks
Non-repetitive Peak Off-state Voltage
Repetitive Peak Off-state Voltage
Effective On-state Current
−
−
VDRM
400
600
V
IT(RMS)
ITSM
10 (TC = 85°C)
A
Refer to Figure 11 and 12.
Refer to Figure 2.
Surge On-state Current
80 (50 Hz 1 cycle)
88 (60 Hz 1 cycle)
28 (1 ms ≤ t ≤ 10 ms)
50
A
Fusing Current
∫ iT dt
A2s
A/µs
W
−
−
−
−
−
−
−
2
Critical Rate Rise of On-state Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
dIT/dt
PGM
PG(AV)
IGM
5.0 (f ≥ 50 Hz, Duty ≤ 10%)
0.5
W
±3 (f ≥ 50 Hz, Duty ≤ 10%)
−40～+125
A
Junction Temperature
Tj
°C
°C
−55～+150
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Parameter
Symbol
Conditions
Tj = 25°C
MIN. TYP. MAX. Unit
Remarks
Repetitive Peak Off-state Current
IDRM
VDM = VDRM
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
2
µ A
mA
V
−
Tj = 125°C
−
On-state Voltage
VTM
IGT
ITM = 10 A
VDM = 12 V,
RL = 30 Ω
−
1.3
20
−
Refer to Figure 1.
Gate Trigger Current
Mode I
T2+, G+
T2−, G+
T2−, G−
T2+, G−
T2+, G+
T2−, G+
T2−, G−
T2+, G−
−
mA Refer to Figure 4.
II
III
−
−
20
20
1.5
−
IV
−
Gate Trigger Voltage
Mode I
II
VGT
VGD
VDM = 12 V,
−
V
Refer to Figure 4.
RL = 30 Ω
−
III
−
1.5
1.5
−
IV
−
1
Tj = 125°C, VDM =
VDRM
Gate Non-trigger Voltage
Holding Current
0.3
V
−
2
IH
VDM = 24 V, ITM = 10 A
2
−
−
30
−
−
mA
−
−
Tj = 125°C, VDM =
VDRM
Critical Rate Rise of Off-state Voltage
dv/dt
100
V/µs
3
Commutating Critical Rate Rise of
Off-state Voltage
(dv/dt)c Tj = 125°C,
10
−
−
V/µs
−
(diT/dt)c = −5 A/ms, VD = 400 V
Note
Thermal Resistance
Rth(j-c)
Junction-to-case AC
−
−
3.5 °C/W Refer to Figure 13.
Note The thermal resistance with a 50 Hz or 60 Hz sine wave current, as shown in the following expression:
Tj(max)−TC
Rth(j-c) =
Tj(max): Maximum junction temperature
PT(AV )
TC: Case temperature
PT(AV): Average on-dissipation
2
Data Sheet D13661EJ4V0DS
AC10DSMA,AC10FSMA
TYPICAL CHARACTERISTICS
Figure 1. iT vs. νT CHARACTERISTIC
MAX.
Figure 2. ITSM RATING
100
50
Initial T
j
= 1ꢀ5˚C
140
1ꢀ0
100
80
I
TSM
0
π
ꢀ π
N = 1
10
5
TC = 1ꢀ5˚C
60 Hz
50 Hz
60
ꢀ5˚C
1.0
0.5
40
ꢀ0
0.1
0
0
1
ꢀ
3
4
5
1
5
10
50
100
νT - On-state Voltage - V
Cycles - N
Figure 3. GATE RATING
Figure 4. GATE CHARACTERISTIC
10
ꢀ.0
Mode
I, III, IV
Tj = −40 to +1ꢀ5˚C
8
6
4
ꢀ
0
1.5
1.0
0.5
0
ꢀ5˚C
−40˚C
P
GM = 5 W
1ꢀ5˚C
f ≥ 50 Hz
Duty ≤ 10%
P
G(AV) = 0.5 W
0
0.5
1.0
1.5
ꢀ.0
ꢀ.5
3.0
0
10
ꢀ0
30
40
IG - Gate Current - A
IGT - Gate Trigger Current - mA
Figure 5. IGT vs. TA CHARACTERISTIC
Figure 6. VGT vs. TA CHARACTERISTIC
1000
100
10
Mode
I, III, IV
Mode
I, III, IV
1.4
1.ꢀ
1.0
0.8
0.6
0.4
0.ꢀ
0
1
−40
0
40
80
1ꢀ0
−40
0
40
80
1ꢀ0
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
3
Data Sheet D13661EJ4V0DS
AC10DSMA,AC10FSMA
Figure 7. iGT vs. τ CHARACTERISTIC
Figure 8. νGT vs. τ CHARACTERISTIC
10000
1000
100
10
5
4
3
ꢀ
1
0
Mode
I, III, IV
TA = ꢀ5˚C
Mode
I, III, IV
TA = ꢀ5˚C
1
1
10
100
1000
1
10
100
1000
τ - Pulse Width - µs
τ - Pulse Width - µs
Figure 9. IH vs. TA CHARACTERISTIC
Figure 10. PT(AV) vs. IT(RMS) CHARACTERISTIC
1000
100
10
1ꢀ
11
10
9
8
7
6
5
4
3
ꢀ
1
1
0
−ꢀ0
0
ꢀ0
40
60
80
100
1ꢀ0
0
1
ꢀ
3
4
5
6
7
8
9
10 11 1ꢀ
TA - Ambient Temperature - °C
IT(RMS) - Effective On-state Current - A
Figure 11. TC vs. IT(RMS) RATING
Figure 12. TA vs. IT(RMS) RATING
140
1ꢀ0
100
80
140
1ꢀ0
100
80
60
60
40
40
ꢀ0
ꢀ0
0
0
0
1
ꢀ
3
4
5
6
7
8
9
10 11 1ꢀ
0
1.0
ꢀ.0
IT(RMS) - Effective On-state Current - A
IT(RMS) - Effective On-state Current - A
4
Data Sheet D13661EJ4V0DS
AC10DSMA,AC10FSMA
Figure 13. Zth CHARACTERISTIC
100
10
1
Junction to ambient
Junction to case
0.1
0.1
1
10
100
1 k
10 k
100 k
Cycles (50 Hz)
5
Data Sheet D13661EJ4V0DS
AC10DSMA,AC10FSMA
•
The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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customers or third parties arising from the use of these circuits, software and information.
•
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M8E 0ꢀ. 11-1
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