2SK3991-ZK-E1-AZ [NEC]
Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3ZK, 3 PIN;
| 型号： | 2SK3991-ZK-E1-AZ |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 30A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3ZK, 3 PIN ISM频段 开关 晶体管 |
| 文件： | 总8页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3991
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3991 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
PART NUMBER
2SK3991
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
2SK3991-ZK
FEATURES
• Low on-state resistance
RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A)
• Low Ciss: Ciss = 830 pF TYP.
• 5 V drive available
(TO-251)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
25
±20
V
V
±30
A
±120
21
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation
W
W
°C
°C
A
PT2
1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
15
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
22.5
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17434EJ2V0DS00 (2nd edition)
The mark ★ shows major revised points.
Date Published February 2005 NS CP(K)
Printed in Japan
2005
2SK3991
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
µA
nA
V
IDSS
VDS = 25 V, VGS = 0 V
10
IGSS
VGS = 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 7.5 A
VGS = 10 V, ID = 15 A
VGS = 5.0 V, ID = 15 A
VDS = 10 V
100
3.0
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
2.0
5
2.5
10
Note
Forward Transfer Admittance
S
Note
Drain to Source On-state Resistance
10.3
17.4
830
200
140
10
13.0
30.2
mΩ
mΩ
pF
pF
pF
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 12.5 V, ID = 15 A
VGS = 10 V
9
ns
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
26
ns
10
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
VDD = 20 V
17
nC
nC
nC
V
QGS
QGD
VF(S-D)
trr
VGS = 10 V
3
ID = 30 A
6
Note
Body Diode Forward Voltage
IF = 30 A, VGS = 0 V
IF = 30 A, VGS = 0 V
di/dt = 100 A/µs
0.99
23
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
Qrr
14
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
t
f
V
DD
t
on
t
off
τ = 1
µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
V
DD
2
Data Sheet D17434EJ2V0DS
2SK3991
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
25
20
15
10
5
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
★
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse) = 120 A
I
D(DC) = 30 A
100
10
1
PW = 100 µs
R
DS(on) Limited
(at VGS = 10 V)
Power Dissipation Limited
1 ms
10 ms
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
★
1000
100
10
Rth(ch-A) = 125°C/W
Rth(ch-C) = 5.95°C/W
1
0.1
Single pulse
100
0.01
100 µ
1 m
10 m
100 m
1
10
1000
PW - Pulse Width - s
3
Data Sheet D17434EJ2V0DS
2SK3991
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
150
100
50
1000
100
10
Pulsed
V
GS = 10 V
5.0 V
T
ch = −55°C
−25°C
25°C
1
75°C
125°C
150°C
0.1
0.01
V
DS = 10 V
Pulsed
0
0
1
2
3
4
5
0
1
2
3
4
5
6
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
6
100
10
1
V
DS = 10 V
= 1 mA
V
DS = 10 V
I
D
Pulsed
5
4
3
2
1
0
T
ch = −55°C
−25°C
25°C
75°C
125°C
150°C
0.1
0.1
1
10
100
-75
-25
25
75
125
175
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
50
Pulsed
Pulsed
25
20
40
30
20
10
0
V
GS = 5.0 V
10 V
15
10
5
I
D
= 15 A
10
0
0
5
15
20
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D17434EJ2V0DS
2SK3991
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
50
I
D
= 15 A
Pulsed
40
30
20
10
0
1000
100
10
C
iss
V
GS = 5.0 V
Coss
C
rss
10 V
75
V
GS = 0 V
f = 1 MHz
0.01
0.1
1
10
100
-75
-25
25
125
175
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
1
24
20
16
12
8
12
10
8
ID = 30 A
V
DD = 20 V
12.5 V
5 V
t
d(off)
t
f
t
d(on)
6
V
GS
t
r
4
V
V
R
DD = 12.5 V
GS = 10 V
= 10 Ω
4
2
V
DS
G
0
0
0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
100
10
1
V
GS = 10 V
0 V
1
0.1
0.01
di/dt = 100 A/µs
V
GS = 0
Pulsed
0
0.5
1
1.5
1
10
IF - Diode Forward Current - A
100
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D17434EJ2V0DS
2SK3991
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
120
100
80
60
40
20
0
V
DD = 12.5 V
= 25 Ω
GS = 20 → 0 V
AS ≤ 15 A
R
G
V
I
I
AS = 15 A
E
AS = 22.5 mJ
V
DD = 12.5 V
R = 25 Ω
G
V
GS = 20 → 0 V
Starting Tch = 25°C
0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D17434EJ2V0DS
2SK3991
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3ZK)
6.6 0.2
Mold Area
2.3 0.1
5.3 TYP.
4.3 MIN.
0.5 0.1
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
4
0.5 0.1
No Plating
4
1
2
3
No Plating
1
2
3
1.14 MAX.
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
0.5 0.1
0.76 0.1
2.3 TYP.
1.0
2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
7
Data Sheet D17434EJ2V0DS
2SK3991
•
The information in this document is current as of February, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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customers or third parties arising from the use of these circuits, software and information.
•
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M8E 02. 11-1
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