2SK3755 [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET
| 型号： | 2SK3755 |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3755
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3755 is N-channel MOS Field Effect Transistor
PART NUMBER
2SK3755
PACKAGE
designed for high current switching applications.
Isolated TO-220
FEATURES
• Super low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A)
RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A)
• Low Ciss: Ciss = 1200 pF TYP.
• Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
40
±20
V
V
±45
A
±140
24
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
2.0
Tch
150
Storage Temperature
Tstg
−55 to +150
23
Single Avalanche Current Note2
Single Avalanche Energy Note2
Repetitive Avalanche Energy Note3
IAS
EAS
53
mJ
mJ
EAR
53
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
3. IAR ≤ 23 A, Tch ≤ 150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16641EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004
2SK3755
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
µA
µA
V
IDSS
VDS = 40 V, VGS = 0 V
10
10
IGSS
VGS = 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 23 A
VGS = 10 V, ID = 23 A
VGS = 4.5 V, ID = 23 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
12
2.0
25
2.5
Note
Forward Transfer Admittance
S
Note
Drain to Source On-state Resistance
9.7
12.9
1200
330
120
10
12
18
mΩ
mΩ
pF
pF
pF
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 20 V, ID = 23 A
VGS = 10 V
4
ns
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 0 Ω
35
ns
5
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
VDD = 32 V
25.5
4.2
7.1
0.98
29
nC
nC
nC
V
QGS
QGD
VF(S-D)
trr
VGS = 10 V
ID = 45 A
Note
Body Diode Forward Voltage
IF = 45 A, VGS = 0 V
IF = 45 A, VGS = 0 V
di/dt = 100 A/µs
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
Qrr
30
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
VDD
PG.
GS = 20 → 0 V
VDD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1
µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
VDD
2
Data Sheet D16641EJ1V0DS
2SK3755
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
30
24
18
12
6
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R
DS(on) Limited
I
D(pulse)
(at VGS = 10 V)
PW = 100 µs
I
D(DC)
Power Dissipation Limited
1
1 ms
10 ms
T
C
= 25°C
Ｓingle pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 62.5°C/W
R
th(ch-C) = 5.21°C/W
1
0.1
Single pulse
1 m
0.01
100 µ
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D16641EJ1V0DS
2SK3755
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
1000
DRAIN TO SOURCE VOLTAGE
160
140
120
100
80
Pulsed
100
10
T
A
= 150°C
75°C
VGS = 10 V
25°C
−55°C
1
4.5 V
60
0.1
40
0.01
0.001
V
DS = 10 V
20
Pulsed
0
0
1
2
3
4
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
2
100
10
1
V
DS = 10 V
= 1 mA
T
A
= −55°C
25°C
I
D
75°C
150°C
1.5
1
V
DS = 10 V
0.5
Pulsed
0
0.1
-100
-50
0
50
100
150
200
0.1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
30
Pulsed
Pulsed
25
20
20
I = 45 A
D
V
GS = 4.5 V
15
10
5
23 A
10
0
10 V
0
0
5
10
15
20
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D16641EJ1V0DS
2SK3755
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
30
10000
VGS = 0 V
f = 1 MHz
I
D
= 23 A
Pulsed
C
1000
100
10
iss
20
10
0
V
GS = 4.5 V
Coss
10 V
C
rss
0.1
1
10
100
-100
-50
0
50
100
150
200
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
100
10
1
14
12
10
8
I = 45 A
D
30
25
20
15
10
5
t
t
d(off)
V
DD = 32 V
20 V
8 V
d(on)
6
t
t
f
r
4
V
GS
V
V
DD = 20 V
GS = 10 V
2
V
DS
G
R = 0 Ω
0
0
0
5
10
15
20
25
30
0.1
1
10
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1000
100
10
Pulsed
GS = 10 V
4.5 V
V
GS = 0 V
di/dt = 100 A/µs
V
0 V
1
1
0.1
0.1
1
10
100
0
0.5
1
1.5
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D16641EJ1V0DS
2SK3755
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
100
80
60
40
20
0
V
DD = 20 V
= 25 Ω
GS = 20 → 0 V
AS ≤ 23 A
RG
V
I
I
AS = 23 A
E
AS = 53 mJ
V
DD = 20 V
R
G
= 25 Ω
V
GS = 20 → 0 V
Starting Tch = 25°C
10 µ
100 µ
1 m
10 m
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - H
6
Data Sheet D16641EJ1V0DS
2SK3755
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
4.5 ±0.2
2.7 ±0.2
10.0 ±0.3
φ
3.2 ±0.2
2.5 ±0.1
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
0.65 ±0.1
1. Gate
2. Drain
3. Source
1
2 3
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
7
Data Sheet D16641EJ1V0DS
2SK3755
•
The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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or any other liability arising from the use of such products. No license, express, implied or otherwise, is
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
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