2SK3653CEF
更新时间:2024-09-18 12:59:02
品牌:NEC
描述:Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3
2SK3653CEF 概述
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 小信号场效应晶体管
2SK3653CEF 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | SOF | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最大漏极电流 (ID): | 0.01 A |
FET 技术: | JUNCTION | JESD-30 代码: | R-PDSO-F3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
2SK3653CEF 数据手册
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PDF下载DATA SHEET
JUNCTION FIELD EF2FESCTKTR3A6NS5IS3TOBR
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3653B is suitable for converter of ECM.
+0.1
0.3 0.0ꢀ
0.13
–0.0ꢀ
General-purpose product.
FEATURES
3
0 to 0.0ꢀ
• Low noise:
−108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Especially suitable for audio and telephone
• Super thin thickness package:
t = 0.37 mm TYP.
2
1
0.4ꢀ
0.4ꢀ
1.4 0.1
MAX. 0.4
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3653B
3pXSOF (0814)
+0.1
–0
0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = −1.0 V)
Gate to Drain Voltage
Drain Current
VDSX
VGDO
ID
20
−20
V
V
2
10
mA
mA
mW
°C
3
Gate Current
IG
10
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
100
1
Tj
125
1: Source
2: Drain
3: Gate
Tstg
−55 to +125
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17284EJ1V0DS00 (1st edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
2SK3653B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
SYMBOL
TEST CONDITIONS
MIN.
90
TYP.
MAX.
UNIT
IDSS
VGS(off)
| yfs1 |
| yfs2 |
Ciss
VDS = 2.0 V, VGS = 0 V
200
−0.37
480
430
µ A
V
VDS = 2.0 V, ID = 1.0 µA
−1.0
Forward Transfer Admittance
VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
VIN = 10 mV, f = 1 kHz
300
750
µS
µS
pF
dB
1300
4.0
Input Capacitance
Voltage Gain
GV
−1.0
Noise Voltage
NV
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
A-curve
−108.5
dB
IDSS CLASSIFICATION
MARKING
CE
CF
150 to 240
CH
CJ
320 to 430
IDSS (µA)
90 to 180
210 to 350
VOLTAGE GAIN TEST CIRCUIT
VDD
R
L
Out
C
NOISE VOLTAGE TEST CIRCUIT
VDD
RL
JIS A
NV (r.m.s)
C
2
Data Sheet D17284EJ1V0DS
2SK3653B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
800
600
400
200
0
100
80
60
40
20
0
VGS = 0.2 V
0.1 V
µ
−0.2 V
−0.3 V
0 V
−0.1 V
0
25
50
75
100
125
150
175
0
2
4
6
8
10
TA - Ambient Temperature - °C
VDS - Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1600
1400
1200
1000
800
600
400
200
0
40
30
VDS = 2.0 V
µ
µ
20
10
−0.8 −0.6 −0.4 −0.2
0
0.2 0.4 0.6 0.8
−10
−20
−30
−40
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
DRAIN TO SOURCE VOLTAGE
10
10
VDS = 2.0 V
VGS = 0 V
f = 1.0 MHz
| yfs |
1
VGS(off)
0.1
1
10
100
1000
1
10
VDS - Drain to Source Voltage - V
100
IDSS - Zero Gate Voltage Drain Current - µA
3
Data Sheet D17284EJ1V0DS
2SK3653B
VOLTAGE GAIN vs. DRAIN CURRENT
NOISE VOLTAGE vs. DRAIN CURRENT
3
2
−103
−105
−107
−109
−111
−113
−115
V
DD = 2.0 V
C = 5 pF
= 2.2 kΩ
IN = 10 mV
f = 1 kHz
V
DD = 2.0 V
C = 5 pF
= 2.2 kΩ
R
V
L
R
L
1
0
−1
−2
−3
−4
−5
10
100
IDSS - Drain Current - µA
1000
10
100
IDSS - Drain Current - µA
1000
4
Data Sheet D17284EJ1V0DS
2SK3653B
•
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
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for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
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(Note)
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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
2SK3653CEF 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
2SK3653CEH | NEC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 | 获取价格 | |
2SK3653CEJ | NEC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 | 获取价格 | |
2SK3653J2 | NEC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 | 获取价格 | |
2SK3653J2-A | NEC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 | 获取价格 | |
2SK3653J2-AT | RENESAS | TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,38UA I(DSS),SOT-416VAR | 获取价格 | |
2SK3653J2-T1-A | RENESAS | TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,38UA I(DSS),SOT-416VAR | 获取价格 | |
2SK3653J2-T1-AT | RENESAS | TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,38UA I(DSS),SOT-416VAR | 获取价格 | |
2SK3653J3 | NEC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 | 获取价格 | |
2SK3653J3-T1-A | RENESAS | TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,56UA I(DSS),SOT-416VAR | 获取价格 | |
2SK3653J4 | NEC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3 | 获取价格 |
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