2SK3575 [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET
| 型号： | 2SK3575 |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3575
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
★ ORDERING INFORMATION
The 2SK3575 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
PART NUMBER
2SK3575
PACKAGE
TO-220AB
2SK3575-S
2SK3575-ZK
2SK3575-Z
TO-262
TO-263
TO-220SMDNote
FEATURES
Note TO-220SMD package is produced only in Japan.
•4.5V drive available
•Low on-state resistance
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
•Low gate charge
QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A)
•Avalanche capability ratings
•Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
30
±20
V
V
±83
A
Note1
±332
1.5
A
Drain Current (pulse)
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
105
Tch
150
Storage Temperature
Tstg
–55 to +150
57
Note2
IAS
Single Avalanche Current
Note2
EAS
325
mJ
Single Avalanche Energy
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16261EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
2002
©
2SK3575
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 30 V, VGS = 0 V
MIN.
TYP.
MAX.
UNIT
µA
nA
V
10
±100
2.5
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 42 A
VGS = 10 V, ID = 42 A
VGS = 4.5 V, ID = 42 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
27
Forward Transfer Admittance
Drain to Source On-state Resistance
S
3.3
4.3
3700
1430
500
26
4.5
6.4
mΩ
mΩ
pF
pF
pF
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 15 V, ID = 42 A
VGS = 10 V
27
ns
Turn-off Delay Time
Fall Time
RG = 10 Ω
110
40
ns
ns
Total Gate Charge
QG
VDD = 24 V
70
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
12
ID = 83 A
20
IF = 83 A, VGS = 0 V
IF = 83 A, VGS = 0 V
di/dt = 100 A/µs
1.0
61
ns
Qrr
94
nC
★
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
90%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
V
DD
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D16261EJ2V0DS
2SK3575
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
ID(pulse)
PW =
10 µs
RDS(on)
Limited
ID(DC)
µ
100
s
1 ms
Power Dissipation
Limited
10 ms
DC
1
C
°
T
= 25 C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3°C/W
Rth(ch-C) = 1.19°C/W
1
0.1
0.01
Single pulse
100 1000
10 µ
100 µ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D16261EJ2V0DS
2SK3575
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
350
300
250
200
150
100
50
1000
100
10
Pulsed
ch
°
= 150 C
T
°
75 C
25°C
GS
V
= 10 V
−
°
55 C
4.5 V
1
0.1
0.01
DS
V
= 10 V
Pulsed
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
3
2.5
2
VDS = 10 V
ID = 1 mA
ch
−
°
T
=
55 C
25°C
°
75 C
°
150 C
1.5
1
0.5
0
DS
V
= 10 V
Pulsed
0.1
-50
0
50
100
150
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
10
Pulsed
Pulsed
8
8
6
6
GS
V
= 4.5 V
10 V
4
2
0
4
2
0
D
= 42 A
I
1
10
100
1000
0
2
4
6
8
10 12 14 16 18 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D16261EJ2V0DS
2SK3575
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
10000
1000
100
D
I
= 42 A
Pulsed
iss
C
6
4
2
0
GS
V
= 4.5 V
oss
rss
C
C
10 V
GS
V
= 0 V
f = 1 MHz
10
-50
0
50
100
150
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
30
12
10
8
DD
V
V
R
= 10 V
= 10 V
GS
25
20
15
10
5
G
Ω
= 10
d(off)
DD
t
V
= 24 V
15 V
f
t
GS
V
d(on)
t
6
r
t
4
2
DS
V
D
I
= 83 A
1
0
0
0.1
1
10
100
0
20
40
60
80
ID - Drain Current - A
QG - Gate Change - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
100
10
1000
100
10
µ
di/dt = 100 A/
s
GS
V
= 0 V
GS
V
= 10 V
0 V
1
0.1
0.01
pulsed
1.2
1
0
0.2
0.4
0.6
0.8
1
1.4
0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
ID - Drain Current - A
5
Data Sheet D16261EJ2V0DS
2SK3575
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
1000
100
10
120
100
80
60
40
20
0
DD
V
R
V
= 15 V
G
Ω
= 25
GS
→
= 20 0 V
AS ≤
I
57 A
IAS = 57 A
EAS = 325 mJ
VDD = 15 V
RG=25 Ω
VGS = 20→0 V
Starting Tch = 25°C
1
0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D16261EJ2V0DS
2SK3575
★
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
10.6 MAX.
4.8 MAX.
1.3±0.2
φ
10 TYP.
3.6±0.2
1.3±0.2
10.0 TYP.
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
1.Gate
2.Drain
3.Source
2.54 TYP.
4.Fin (Drain)
Note
4) TO-220SMD(MP-25Z)
3) TO-263(MP-25ZK)
4.8 MAX.
10 TYP.
4
10.0±0.2
4.45±0.2
1.3±0.2
0.4
1.3±0.2
No plating
8.4 TYP.
4
0.025 to
0.25
1
2
3
1.4±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
0.7±0.15
1.Gate
2.Drain
3.Source
2.54
0.25
1
2
3
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark Strong electric field, when exposed to this device, can
cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to
stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
Body
Diode
Gate
Source
7
Data Sheet D16261EJ2V0DS
2SK3575
•
The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4
相关型号：
2SK3575-ZK-AZ
Power Field-Effect Transistor, 83A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, MP-25ZK, 3 PIN
NEC
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