2SK3435-Z [NEC]
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE; 切换N沟道功率MOS FET工业用
| 型号： | 2SK3435-Z |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
ORDERING INFORMATION
PART NUMBER
2SK3435
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
PACKAGE
TO-220AB
TO-262
2SK3435-S
FEATURES
2SK3435-Z
TO-220SMD
• Super low on-state resistance:
DS(on)1
GS
D
R
R
= 14 mΩ MAX. (V = 10 V, I = 40 A)
(TO-220AB)
DS(on)2
GS
D
= 22 mΩ MAX. (V = 4.0 V, I = 40 A)
★
★
iss
iss
• Low C : C = 3200 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
VGSS
ID(DC)
ID(pulse)
PT
60
±20
V
V
Gate to Source Voltage
Drain Current (DC)
±80
A
(TO-262)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
±320
84
A
★
W
W
°C
°C
A
PT
1.5
Tch
150
Storage Temperature
Tstg
–55 to +150
31
★
★
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
96
mJ
(TO-220SMD)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
★
Channel to Case
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
Channel to Ambient
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ★ shows major revised points.
Document No.
Date Published March 2000 NS CP(K)
Printed in Japan
D14604EJ1V0DS00 (1st edition)
1999, 2000
©
2SK3435
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
TEST CONDITIONS
VGS = 10 V, ID = 40 A
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
11
16
2.0
43
14
22
mΩ
mΩ
V
★
★
VGS = 4.0 V, ID = 40 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 40 A
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
1.5
21
2.5
S
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0V
VDS = 10 V, VGS = 0 V, f = 1 MHz
10
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
IGSS
±10
★
★
Ciss
3200
520
260
80
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Turn-on Delay Time
td(on)
tr
td(off)
tf
ID = 40 A, VGS(on) = 10 V, VDD = 30 V,
Rise Time
RG = 10 Ω
1200
200
350
60
Turn-off Delay Time
Fall Time
★
★
★
Total Gate Charge
QG
ID = 80 A , VDD = 48 V, VGS = 10 V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
10
16
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/µs
1.0
46
★
★
ns
nC
Qrr
66
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
GS
R
L
90 %
90 %
PG.
V
GS
V
GS(on)
10 %
V
DD
50 Ω
Wave Form
0
R
G
V
GS = 20 → 0 V
PG.
V
DD
90 %
I
D
BVDSS
I
D
I
AS
V
0
GS
10 %
10 %
I
D
0
V
DS
Wave Form
I
D
t
r
t
d(on)
t
d(off)
t
f
VDD
τ
t
on
toff
τ = 1µs
Starting Tch
Duty Cycle ≤ 1 %
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
R
L
PG.
VDD
50 Ω
2
Preliminary Data Sheet D14604EJ1V0DS00
2SK3435
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
10.6 MAX.
10.0
φ
3.6±0.2
4.8 MAX.
1.3±0.2
(10)
4
4
1
2
3
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
1.Gate
0.75±0.1
2.54 TYP.
0.5±0.2
2.8±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.Drain
3.Source
4.Fin (Drain)
3) TO-220SMD (MP-25Z)
EQUIVALENT CIRCUIT
4.8 MAX.
(10)
4
1.3±0.2
Drain
Body
Diode
Gate
1.4±0.2
1.0±0.3
Gate
Protection
Diode
0.5±0.2
Source
2.54 TYP.
2.54 TYP.
1
2
3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
3
Preliminary Data Sheet D14604EJ1V0DS00
2SK3435
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
相关型号：
2SK3435-Z-AZ
Power Field-Effect Transistor, 80A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN
NEC
2SK3437(2-10S1B)
TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3 PIN, FET General Purpose Power
TOSHIBA
2SK3437(2-10S2B)
TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power
TOSHIBA
©2020 ICPDF网 联系我们和版权申明