2SK2826-S-AZ [NEC]
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN;型号: | 2SK2826-S-AZ |
厂家: | NEC |
描述: | Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN |
文件: | 总8页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK2826 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
PART NUMBER
2SK2826
PACKAGE
TO-220AB
TO-262
2SK2826-S
2SK2826-ZJ
2SK2826-Z
FEATURES
TO-263
• Super Low On-state Resistance
RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss : Ciss = 7200 pF TYP.
• Built-in Gate Protection Diode
Note
★
★
TO-220SMD
Note TO-220SMD package is produced only in
Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS(AC)
VGSS(DC)
ID(DC)
ID(pulse)
PT1
60
V
V
V
A
A
±20
+20, –10
±70
±280
100
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
(TO-262)
PT2
1.5
W
°C
°C
A
Tch
150
Storage Temperature
Tstg
–55 to + 150
70
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
490
mJ
(TO-263, TO-220SMD)
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1%
★
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published April 2001 NS CP(K)
Printed in Japan
D11273EJ3V0DS00 (3rd edition)
The mark ! shows major revised points.
1998, 2001
©
2SK2826
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
IDSS
TEST CONDITIONS
VDS = 60 V, VGS = 0 V
MIN. TYP. MAX.
UNIT
µ A
µ A
V
10
±10
2.0
Zero Gate Voltage Drain Current
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 35 A
VGS = 10 V, ID = 35 A
VGS = 4.0 V, ID = 35 A
VDS = 10 V
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.0
20
1.5
94
Gate Cut-off Voltage
S
Forward Transfer Admittance
Drain to Source On-state Resistance
5.5
6.5
9.7
mΩ
mΩ
pF
pF
pF
ns
7.0
Input Capacitance
7200
2000
700
100
1200
440
520
150
20
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
td(off)
tf
ID = 35 A
VGS = 10 V
ns
Turn-off Delay Time
Fall Time
VDD = 30 V
ns
RG = 10 Ω
ns
Total Gate Charge
QG
ID = 70 A
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VDD = 48 V
VGS = 10 V
40
IF = 70 A, VGS = 0 V
IF = 70 A, VGS = 0 V
di/dt = 100A/µ s
0.97
80
ns
Qrr
250
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
GS
R
L
90%
PG.
GS = 20 → 0 V
V
GS
10%
VDD
50 Ω
Wave Form
0
RG
V
PG.
VDD
90%
I
D
90%
10%
BVDSS
I
D
I
AS
V
0
GS
10%
I
D
0
V
DS
Wave Form
I
D
t
r
t
d(on)
t
d(off)
t
f
V
DD
τ
t
on
toff
τ = 1µs
Starting Tch
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
RL
PG.
V
DD
50 Ω
2
Data Sheet D11273EJ3V0DS
2SK2826
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
100
80
60
40
20
60
40
20
0
20 40 60 80 100 120 140 160
Case Temperature - ˚C
0
20 40 60 80 100 120 140 160
T
C
-
TC - Case Temperature - ˚C
★
FORWARD BIAS SAFE OPERATING AREA
1000
PW = 10
I
D(pulse)
100
µ
s
µ
s
1 ms
10 ms
100 ms
100
10
1
I
D(DC)
Limited
RDS(on)
DC
Power Dissipation
Limited
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
th(ch-A) = 83.3 ˚C/W
th(ch-C) = 1.25 ˚C/W
R
1
0.1
0.01
Single Pulse
T
C
= 25˚C
0.001
10 µ
1 m
10 m
100 m
1
10
100
1000
100 µ
PW - Pulse Width - s
3
Data Sheet D11273EJ3V0DS
2SK2826
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
Pulsed
1000
100
10
Pulsed
100
80
60
V
GS =10 V
40
20
T
A
= –25˚C
25˚C
75˚C
125˚C
V
GS = 4.0 V
0.4
1
V
DS = 10 V
0
2
6
8
4
0
0.8
0.2
0.6
V
GS - Gate to Source Voltage - V
V
DS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
100
10
Pulsed
VDS=10V
Pulsed
V
GS = 0V
20
10
1.0
0.1
T
A
= 175˚C
75˚C
T
A
= 25˚C
= 35 A
25˚C
I
D
–25˚C
0.1
1.0
10
100
0
10
20
30
ID - Drain Current - A
V
GS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
V
DS = 10 V
30
20
I = 1 mA
D
2.0
1.5
1.0
10
0
V
GS = 4.0 V
0.5
0
V
GS = 10 V
10
100
D - Drain Current - A
1000
- 50
0
50
100
150
200
I
T
ch - Channel Temperature - ˚C
4
Data Sheet D11273EJ3V0DS
2SK2826
★
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1000
Pulsed
20
15
V
GS = 10 V
100
10
1
0 V
V
GS = 4.0 V
10
5
V
GS = 10 V
I
D
= 25 A
150
0
0.1
0
- 50
100
50
0
1.5
1.0
- Source to Drain Voltage - V
0.5
T
ch - Channel Temperature - ˚C
VSD
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
1000
100000
10000
V
GS = 0 V
f = 1 MHz
t
r
Ciss
t
f
t
d(off)
Coss
t
d(on)
100
10
1000
100
C
rss
V
V
DD = 30 V
GS = 10 V
R
G
= 10 Ω
100
0.1
1
10
0.1
1
10
100
I
D
- Drain Current - A
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
8
1000
100
80
60
40
20
di/dt = 100 A/µs
GS = 0 V
V
V
GS
6
4
2
V
DD = 48 V
30 V
12 V
10
1
V
DS
0
50
Q
100
150
200
0.1
1.0
10
100
G
- Gate Charge - nC
I
F
- Drain Current - A
5
Data Sheet D11273EJ3V0DS
2SK2826
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
100
10
V
DD = 30 V
= 25 Ω
GS = 20 → 0 V
AS ≤ 70 A
R
G
I
AS = 70 A
140
120
100
80
V
I
60
1.0
40
V
= 30 V
VDGDS = 20 → 0 V
20
R
G = 25 Ω
0
25
10 µ
50
75
100
125
150
100 µ
1 m
10 m
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - H
6
Data Sheet D11273EJ3V0DS
2SK2826
★
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
4.8 MAX.
1.3±0.2
10.6 MAX.
(10)
4
φ
3.6±0.2
1.3±0.2
10.0
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
1.Gate
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
0.5±0.2
2.8±0.2
2.54 TYP.
2.54 TYP.
2.Drain
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4) TO-220SMD(MP-25Z)Note
4.8 MAX.
4.8 MAX.
(10)
4
(10)
4
1.3±0.2
1.3±0.2
1.4±0.2
0.7±0.2
1.4±0.2
1.0±0.3
0.5±0.2
0.5±0.2
2.54 TYP.
2.54 TYP.
2.54 TYP.
2.54 TYP.
3
1
2
3
1
2
1.Gate
1.Gate
2.Drain
3.Source
2.Drain
3.Source
4.Fin (Drain)
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Body
Diode
Gate
Gate
Protection
Diode
Source
7
Data Sheet D11273EJ3V0DS
2SK2826
•
The information in this document is current as of April, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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M8E 00. 4
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