2SK2498 [NEC]
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE; 切换N沟道功率MOS FET工业用
| 型号： | 2SK2498 |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 文件： | 总8页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2498
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
(in millimeter)
2SK2498 is N-Channel MOS Field Effect Transistor designed for
high current switching applications.
10.0 0.ꢀ
4.5 0.ꢁ
FEATURES
ꢀ.ꢁ 0.ꢁ
ꢁ.7 0.ꢁ
• Super Low On-State Resistance
RDS (on)1 ≤ 9 mΩ (VGS = 10 V, ID = 25 A)
RDS (on)2 ≤ 14 mΩ (VGS = 4 V, ID = 25 A)
• Low Ciss
Ciss = 3400 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
• Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
60
±20
±50
±200
35
V
V
0.7 0.1
ꢁ.54
1.ꢀ 0.ꢁ
ꢁ.5 0.1
0.65 0.1
Drain Current (DC)
A
1.5 0.ꢁ
ꢁ.54
Drain Current (pulse)*
A
Total Power Dissipation (Tc = 25 ˚C)
Total Power Dissipation (TA = 25 ˚C)
Channel Temperature
W
W
˚C
1. Gate
ꢁ. Drain
ꢀ. Source
PT2
2.0
Tch
150
1
ꢁ ꢀ
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
Single Avalanche Energy**
IAS
50
A
MP-45F (ISOLATED TO-220)
EAS
250
mJ
Drain
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Body
Diode
Gate
Gate Protection
Diode
Source
Document No. D10044EJ1V0DS00 (1st edition)
Date Published July 1995
Printed in Japan
P
1995
©
2SK2498
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
RDS (on)1
RDS (on)2
VGS (off)
| yfs |
IDSS
MIN.
TYP.
7.3
11
MAX.
9.0
UNIT
mΩ
mΩ
V
TEST CONDITIONS
Drain to Source On-Resistance
VGS = 10 V, ID = 25 A
VGS = 4 V, ID = 25 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 25 A
VDS = 60 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V
14
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
1.0
20
1.5
58
2.0
S
10
µA
nA
pF
pF
pF
ns
IGSS
±10
Ciss
3400
1600
770
55
Output Capacitance
Coss
VGS = 0
Reverse Transfer Capacitance
Turn-On Delay Time
Crss
f = 1 MHz
td (on)
tr
ID = 25 A
Rise Time
360
480
360
152
11
ns
VGS(on) = 10 V
VDD = 30 V
Turn-Off Delay Time
Fall Time
td (off)
tf
ns
ns
RG = 10 Ω
Total Gate Charge
QG
nC
nC
nC
V
ID = 50 A
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
VDD = 48 V
QGD
60
VGS = 10 V
VF (S-D)
trr
0.92
105
265
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
di/dt = 100 A/µs
ns
Qrr
µC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
D.U.T.
V
GS
RL
L
V
90 %
V
GS
Wave Form
RG
= 25 Ω
V
GS (on)
10 %
10 %
RG
0
PG.
RG = 10 Ω
VDD
PG
50 Ω
DD
I
D
90 %
V
GS = 20 → 0 V
90 %
10 %
I
D
VGS
0
I
D
0
BVDSS
Wave Form
t
d (on)
t
r
t
d (off)
t
f
IAS
t
V
DS
ID
t
on
t
off
V
DD
t = 1
µ
s
Duty Cycle ≤ 1 %
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
= 2 mA
I
G
R
L
PG.
50 Ω
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2498
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
100
80
60
40
20
0
20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
0
20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
1000
100
Pulsed
200
ID(pulse)
µ
VGS = 20 V
VGS = 10 V
160
120
µ
ID(DC)
VGS = 4 V
80
40
10
1
TC = 25 ˚C
Single Pulse
2
4
0.1
1
10
100
0
3
1
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
Pulsed
1000
100
10
TA = –25 ˚C
25 ˚C
125 ˚C
1
VDS = 10 V
0
2
4
6
8
VGS - Gate to Source Voltage - V
3
2SK2498
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
10
Rth(ch-a) = 62.5 ˚C/W
Rth(ch-c) = 3.57 ˚C/W
1
0.1
0.01
Single Pulse
0.001
µ
100 µ
10
1 m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
1000
100
10
Pulsed
VDS = 10 V
Pulsed
20
10
ID = 25 A
1
1
10
100
1000
0
10
20
30
ID - Drain Current - A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
VDS = 10 V
ID = 1 mA
30
20
2.0
1.5
1.0
VGS = 4 V
10
0
0.5
0
VGS = 10 V
10
100
1000
–50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - ˚C
4
2SK2498
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
20
100
10
1
15
10
5
VGS = 4 V
4 V
VGS = 0
VGS = 10 V
0.1
ID = 25 A
150
0
0
0
–50
1.5
0.5
1.0
100
50
Tch - Channel Temperature - ˚C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100 000
10 000
1 000
100
VGS = 0
td(off)
f = 1 MHz
tf
tr
Ciss
td(on)
Coss
Crss
1 000
100
10
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1.0
0.1
0.1
1
10
100
1.0
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
16
14
12
10
8
80
60
40
20
µ
di/dt =100 A/ s
VDD = 48 V
ID = 50 A
VGS = 0
VDS
VGS
6
10
4
2
1.0
0.1
0
1.0
10
100
0
50
100
150
200
ID - Drain Current - A
Qg - Gate Charge - nC
5
2SK2498
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
160
140
V
= 30 V
RDD= 25 Ω
VGGS = 20 V → 0
IAS = 50 A
<
AS 50 A
I
120
100
80
60
1.0
0.1
40
VDD = 30 V
20
0
VGS = 20 V → 0
RG = 25 Ω
10 µ
100 µ
1 m
10 m
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - ˚C
6
2SK2498
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
MEI-1202
MF-1134
TEA-1034
TEA-1035
TEA-1037
Power MOS FET features and application switching power supply.
Application circuits using Power MOS FET.
Safe operating area of Power MOS FET.
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
7
2SK2498
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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