2SD2425-AB3 [NEC]

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin;
2SD2425-AB3
型号: 2SD2425-AB3
厂家: NEC    NEC
描述:

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

开关 晶体管
文件: 总6页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
SILICON TRANSISTOR  
2SD2425  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SD2425 is  
a transistor featuring high current  
capacitance in small dimension. This transistor is ideal for  
DC/DC converters and motor drivers.  
FEATURES  
• New package with dimensions in between those of small  
signal and power signal package  
• High current capacitance  
• Low collector saturation voltage  
• Complementary transistor with 2SB1578  
QUALITY GRADES  
Electrode connection  
1. Emitter  
• Standard  
Please refer to “Quality Grades on NEC Semiconductor  
Devices” (Document No. C11531E) published by NEC  
Corporation to know the specification of quality grade on the  
devices and its recommended applications.  
2. Collector  
3.Base  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
IB(DC)  
PT  
Conditions  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
60  
60  
V
6.0  
5.0  
V
A
PW 10 ms, duty cycle 50 %  
7.0  
1.0  
A
A
7.5 cm2 × 0.7 mm ceramic board mounted  
Total power dissipation  
Junction temperature  
Storage temperature  
2.0  
W
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16157EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©
2SD2425  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 50 V, IE = 0  
MIN.  
TYP.  
MAX.  
10  
Unit  
µA  
µA  
IEBO  
VEB = 6.0 V, IC = 0  
10  
hFE1  
hFE2  
hFE3  
VCE(sat)  
VBE(sat)  
ton  
VCE = 1.0 V, IC = 0.1 A  
VCE = 1.0 V, IC = 2.0 A  
VCE = 2.0 V, IC = 5.0 A  
IC = 2.0 A, IB = 0.2 A  
IC = 2.0 A, IB = 0.2 A  
60  
100  
50  
180  
200  
150  
90  
DC current gain  
400  
DC current gain  
Collector saturation voltage  
Base saturation voltage  
Turn-on time  
300  
1.2  
mV  
V
0.9  
µs  
µs  
µs  
IC = 2.0 A, VCC= 10 V  
IB1 = IB2 = 0.2 A  
RL = 5.0 Ω  
0.6  
Storage time  
tstg  
0.8  
Fall time  
tf  
0.08  
hFE CLASSIFICATION  
Marking  
hFE2  
AB1  
AB2  
AB3  
200 to 400  
100 to 200  
160 to 320  
TYPICAL CHARACTERISTICS (Ta = 25°C)  
2
Data Sheet D16157EJ1V0DS  
2SD2425  
3
Data Sheet D16157EJ1V0DS  
2SD2425  
4
Data Sheet D16157EJ1V0DS  
2SD2425  
[MEMO]  
5
Data Sheet D16157EJ1V0DS  
2SD2425  
The information in this document is current as of July, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  

相关型号:

2SD2425-AZ

2SD2425-AZ
RENESAS

2SD2425AB1

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
NEC

2SD2425AB1-AY

TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR
RENESAS

2SD2425AB1-T1-AY

暂无描述
RENESAS

2SD2425AB1-T2-AZ

TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR
RENESAS

2SD2425AB2

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
NEC

2SD2425AB2-T1-AZ

TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR
RENESAS

2SD2425AB3

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
NEC

2SD2425AB3-AY

TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR
RENESAS

2SD2425AB3-T2-AY

TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR
RENESAS

2SD2426

Driver Applications
SANYO

2SD2428

TRANSISTOR 8 A, 600 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
TOSHIBA