2SC5606-A [NEC]

NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG); NPN硅射频晶体管低噪声·高增益放大3 -PIN超超MINIMOLD ( 19 , 1608 PKG )
2SC5606-A
型号: 2SC5606-A
厂家: NEC    NEC
描述:

NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN硅射频晶体管低噪声·高增益放大3 -PIN超超MINIMOLD ( 19 , 1608 PKG )

晶体 晶体管 射频 光电二极管 放大器
文件: 总7页 (文件大小:67K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5606  
NPN SILICON RF TRANSISTOR FOR  
LOW NOISE · HIGH-GAIN AMPLIFICATION  
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)  
FEATURES  
Suitable for high-frequency oscillation  
fT = 25 GHz technology adopted  
3-pin ultra super minimold (19, 1608 PKG) package  
<R>  
ORDERING INFORMATION  
Part Number Order Number  
Package  
Quantity  
Supplying Form  
2SC5606  
2SC5606-A  
3-pin ultra super minimold 50 pcs (Non reel)  
• 8 mm wide embossed taping  
(19, 1608 PKG) (Pb-Free)  
3 kpcs/reel  
2SC5606-T1 2SC5606-T1-A  
• Pin 3 (collector) face the perforation side of  
the tape  
Remark To order evaluation samples, please contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
15  
3.3  
V
1.5  
V
35  
mA  
mW  
°C  
°C  
Note  
Ptot  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
115  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. PU10781EJ01V0DS (1st edition)  
(Previous No. P14658EJ3V0DS00)  
Date Published August 2009 NS  
Printed in Japan  
1999, 2009  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
2SC5606  
ELECTRICAL CHARACTERISTICS (TA = +25°C)  
Parameter  
DC Characteristics  
Symbol  
Test Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 5 V, IE = 0 mA  
200  
200  
100  
nA  
nA  
VEB = 1 V, IC = 0 mA  
VCE = 2 V, IC = 5 mA  
Note 1  
hFE  
60  
80  
RF Characteristics  
Gain Bandwidth Product  
Insertion Power Gain  
Noise Figure  
fT  
VCE = 2 V, IC = 20 mA, f = 2 GHz  
10  
21  
12.5  
1.2  
GHz  
dB  
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz  
VCE = 2 V, IC = 5 mA, f = 2 GHz,  
NF  
1.5  
dB  
ZS = Zopt  
Note 2  
Reverse Transfer Capacitance  
Maximum Available Power Gain  
Maximum Stable Power Gain  
Cre  
VCB = 2 V, IE = 0 mA, f = 1 MHz  
0.21  
14  
0.3  
pF  
dB  
dB  
MAGNote 3 VCE = 2 V, IC = 20 mA, f = 2 GHz  
MSGNote 4 VCE = 2 V, IC = 20 mA, f = 2 GHz  
15  
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
S21  
S12  
(K – (K2 – 1) )  
3. MAG =  
S21  
S12  
4. MSG =  
hFE CLASSIFICATION  
Rank  
Marking  
hFE  
FB/YFB  
UA  
<R>  
60 to 100  
2
Data Sheet PU10781EJ01V0DS  
2SC5606  
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)  
<R>  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
200  
150  
1.0  
f = 1 MHz  
Mounted on Glass Epoxy Board  
(1.08 cm2 × 1.0 mm (t) )  
115  
100  
50  
0
0.1  
0.1  
0
25  
50  
75  
100  
125  
(°C)  
150  
1.0  
10.0  
100.0  
Ambient Temperature T  
A
Collector to Base Voltage VCB (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
50  
40  
30  
20  
10  
40  
μ
I 100 A step  
B
V
CE = 2 V  
μ
650  
A
μ
450  
A
30  
20  
μ
μ
250  
A
A
10  
0
I
B
= 50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
3
0
1
2
4
Base to Emitter Voltage VBE (V)  
Collector to Emitter Voltage VCE (V)  
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
1 000  
V
CE = 2 V  
100  
10  
0.1  
1.0  
10.0  
(mA)  
100.0  
Collector Current I  
C
Remark The graphs indicate nominal characteristics.  
3
Data Sheet PU10781EJ01V0DS  
2SC5606  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
30  
25  
20  
30  
25  
20  
V
CE = 1 V  
V
CE = 2 V  
f = 2 GHz  
f = 2 GHz  
15  
10  
15  
10  
5
0
5
0
1
10  
100  
1
10  
100  
Collector Current I  
C
(mA)  
Collector Current I (mA)  
C
INSERTION POWER GAIN  
vs. FREQUENCY  
INSERTION POWER GAIN  
vs. FREQUENCY  
35  
30  
25  
20  
35  
30  
25  
20  
V
CE = 1 V  
= 10 mA  
VCE = 2 V  
IC = 20 mA  
IC  
15  
10  
5
15  
10  
5
0
0.1  
0
0.1  
1.0  
10.0  
1.0  
10.0  
Frequency f (GHz)  
Frequency f (GHz)  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
16  
16  
V
CE = 1 V  
VCE = 2 V  
f = 2 GHz  
f = 2 GHz  
14  
14  
12  
10  
8
12  
10  
8
6
4
6
4
2
0
2
0
1
10  
100  
1
10  
100  
Collector Current I  
C
(mA)  
Collector Current I (mA)  
C
Remark The graphs indicate nominal characteristics.  
4
Data Sheet PU10781EJ01V0DS  
2SC5606  
NOISE FIGURE vs.  
COLLECTOR CURRENT  
3.0  
2.5  
2.0  
V
CE = 2 V  
f = 2 GHz  
1.5  
1.0  
0.5  
0
1
10  
Collector Current I  
100  
C
(mA)  
Remark The graph indicates nominal characteristics.  
<R>  
S-PARAMETERS  
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import  
of the parameters to microwave circuit simulators without the need for keyboard inputs.  
Click here to download S-parameters.  
[RF and Microwave] [Device Parameters]  
URL http://www.necel.com/microwave/en/  
5
Data Sheet PU10781EJ01V0DS  
2SC5606  
PACKAGE DIMENSIONS  
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)  
1.6 0.1  
0.8 0.1  
2
1
3
PIN CONNECTIONS  
1. Emitter  
2. Base  
3. Collector  
6
Data Sheet PU10781EJ01V0DS  
2SC5606  
The information in this document is current as of August, 2009. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products  
and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC  
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers  
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate  
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in  
order to avoid risks of the damages to property (including public or social property) or injury (including death) to  
persons, as the result of defects of NEC Electronics products.  
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E0904E  

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