2SC5336-RF-A [NEC]
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4;
| 型号： | 2SC5336-RF-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4 晶体 放大器 晶体管 |
| 文件： | 总6页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
PACKAGE DIMENSIONS
•
High gain
| S21
2 = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA
(in millimeters)
|
4.5±0.1
•
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3357
1.6±0.2
1.5±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
C
B
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
E
E
20
12
V
0.42
±0.06
0.42
±0.06
3.0
V
0.25±0.02
100
mA
W
1.5
3.0
0.46
±0.06
Note1
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
1.2
Tj
150
°C
°C
Tstg
–65 to +150
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
2
Note 1
×
. 0.7 mm 16 cm double sided ceramic substrate (Copper plating)
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICB0
IEB0
hFE
Test Conditions
VCB = 10 V, IE = 0
MIN.
50
TYP.
MAX.
1.0
Unit
µA
VEB = 1 V, IC = 0
1.0
µA
VCE = 10 V, IC = 20 mANote2
120
6.5
250
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
fT
VCE = 10 V, IC = 20 mA
GHz
pF
Cre
VCB = 10 V, IE = 0, f = 1.0 MHzNote3
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
0.5
0.8
2
| S21e
NF
|
12.0
1.1
dB
dB
Noise Figure
NF
1.8
3.0
dB
Notes 2
3
≤
µ
≤
. Pulse measurement : PW 350 S, Duty Cycle 2 %
. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank
Marking
hFE
RH
RH
RF
RF
RE
RE
50 to 100
80 to 160
125 to
250
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996
2SC5336
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1.0 MH
Z
3.0
2.0
2.0
Ceramic Substrate
16 cm2 × 0.7 mm
1.0
1.0
0.5
0.3
Free Air
Rth(j–a) 312.5 ˚C/W
0
50
100
150
1
3
5
10
20 30
T
A
- Ambient Temperature - ˚C
VCB - Collector to Base Voltage - V
INSERTION GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
15
10
200
100
V
CE = 10 V
V
CE = 10 V
f = 1 GH
Z
50
5
0
20
10
0.5
1
5
10
50
1
3
5
10
20 30 50 100
I
C
- Collector Current - mA
IC - Collector Current - mA
INSERTION GAIN .MAXIMUM GAIN vs.
FREQUENCY
GAIN BAND WIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5
2
21e
S
MAG
3
2
20
10
0
1
0.5
0.3
V
CE = 10 V
VCE = 10 V
f = 1 GH
Z
IC
= 20 mA
1
3
5
10
20
30 50
0.2
0.4
0.6 0.8 1.0 1.4 2.0
f - Frequency - GH
Z
I
C
- Collector Current - mA
2
2SC5336
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
NOISE FIGURE vs. COLLECTOR CURRENT
7
6
V
CE = 10 V
f = 1 GH
Z
–80
–70
–60
IM
3
5
4
IM
2
3
2
1
0
–50
–40
–30
V
CE = 10 V
at
µ
V
O
= 100 dB V/50 Ω
R
g
= R = 50 Ω
e
IM
IM
2
f = 90 + 100 MH
= 2 × 200 – 190 MH
Z
3
f
Z
0.5
1
5
10
50
20
30
40
50
60 70
I
C
- Collector Current - mA
I
C
- Collector Current - mA
3
2SC5336
S-PARAMETER
VCE = 10 V, IC = 20 mA
S11
S21
S12
S22
f (MHz)
100
MAG
.519
.413
.413
.345
.331
.320
.302
.296
.283
.285
.265
.260
.263
.242
.252
.253
.253
.257
.262
.273
ANG
74.5
MAG
30.931
18.965
13.324
10.164
8.177
6.834
5.832
5.107
4.600
4.200
3.930
3.979
3.741
3.115
2.844
2.595
2.420
2.305
2.171
2.049
ANG
131.9
111.5
101.9
95.9
91.8
89.1
86.7
84.3
83.1
82.3
80.8
78.5
68.6
66.6
65.7
64.1
63.7
63.0
62.6
61.2
MAG
.017
.031
.038
.045
.055
.064
.074
.077
.088
.097
.100
.109
.114
.119
.133
.140
.158
.165
.172
.177
ANG
60.6
61.9
65.1
69.8
71.8
70.9
73.9
74.4
71.2
74.5
76.3
75.9
76.8
78.3
82.0
81.0
80.9
82.2
80.5
78.3
MAG
.752
.570
.465
.428
.436
.438
.434
.429
.436
.455
.467
.529
.551
.509
.510
.496
.515
.518
.536
.524
ANG
30.2
39.7
39.8
40.1
41.1
43.5
47.5
47.8
46.5
47.8
46.8
47.4
55.8
55.8
58.5
55.2
54.8
56.5
58.6
61.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
200
112.9
133.4
145.7
153.8
159.6
166.8
169.2
173.2
179.8
175.2
174.1
166.0
163.0
160.1
154.0
149.9
147.2
143.0
141.5
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
4
2SC5336
S-PARAMETER
VCE = 10 V, IC = 40 mA
S11
S21
S12
S22
f (MHz)
100
MAG
.378
.317
.308
.299
.297
.288
.274
.261
.255
.260
.243
.239
.245
.216
.235
.243
.233
.242
.249
.260
ANG
97.1
MAG
32.908
18.819
12.955
9.775
7.899
6.586
5.607
4.879
4.435
4.024
3.801
3.827
3.587
2.980
2.726
2.537
2.348
2.200
2.073
1.986
ANG
123.3
106.0
97.5
93.1
89.8
87.6
85.2
83.5
82.2
81.4
80.6
78.2
68.4
66.0
66.1
64.0
64.2
63.5
63.3
61.7
MAG
.017
.027
.035
.042
.052
.061
.071
.081
.092
.095
.098
.109
.117
.125
.137
.143
.159
.163
.171
.184
ANG
71.1
71.2
71.8
78.1
78.5
79.1
77.4
76.4
76.5
77.6
77.1
78.3
78.0
80.3
86.5
80.6
81.2
80.4
81.7
77.5
MAG
.665
.487
.398
.393
.399
.407
.400
.415
.399
.440
.441
.494
.517
.486
.500
.474
.496
.491
.534
.535
ANG
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
34.7
38.7
38.5
36.9
37.6
39.9
44.6
47.4
46.2
44.3
45.2
46.2
55.4
54.5
59.0
53.7
56.8
53.6
58.0
61.3
−
−
−
−
−
−
−
200
131.8
150.1
158.7
165.5
169.2
173.7
177.3
178.9
173.0
169.4
169.3
160.3
157.8
155.3
148.8
146.0
144.6
141.9
140.4
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
5
2SC5336
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use of
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of a
device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard : Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they
should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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