2SC5289-T1KB-A [NEC]
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-61, 4 PIN;
| 型号： | 2SC5289-T1KB-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-61, 4 PIN |
| 文件： | 总12页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC5289
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital
cordless phones (DECT, PHS, etc.).
PACKAGE DRAWING
(Unit: mm)
+0.2
–0.3
+0.2
–0.1
2.8
1.5
FEATURES
•
P–1 = 27 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
4-Pin Mini Mold Package
•
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
5°
5°
5°
5°
2SC5289-T1
3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark To order evaluation samples, contact your nearby sales office.
(Unit sample quantity is 50 pcs.)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
9.0
6.0
V
2.0
V
300
mA
mW
W
Total Power Dissipation
PT
200 (CW)
1.2 (duty = 1/8)
Note
Note
3.0 (duty = 1/24)
150
W
Junction Temperature
Storage Temperature
Tj
˚C
˚C
Tstg
–65 to +150
Note Pulse period is 10 msec or less.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10040EJ01V0DS (1st edition)
(Previous No. P10250EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Corporation 1995
NEC Compound Semiconductor Devices 2001
2SC5289
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Power
Symbol
ICBO
IEBO
hFE
Condition
VCB = 5 V, IE = 0
MIN.
TYP.
MAX.
Unit
µA
5
5
VEB = 1 V, IC = 0
µA
VCE = 3.6 V, IC = 200 mA
VCC = 3.6 V, f = 1.9 GHz,
ICq = 1 mA (class AB operation)
Duty factor 1/8
60
26.3
5.0
60
P–1
27.0
6.0
70
dBm
dB
Power Gain
GP
Collector Efficiency
ηC
%
hFE Classification
Rank
KB
Marking
T90
hFE
more than 60
APPLICATION EXAMPLES
(1) Power amplifier for DECT
+3 dBm
PO
= 27 dBm
2SC5192
2SC5288
2SC5289
(2) Power amplifier for PHS
+7 dBm
PL = 23 dBm
2SC5288
2SC5289
2
Data Sheet PU10040EJ01V0DS
2SC5289
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
500
400
300
200
100
VCE = 3.6 V
0
0.5
1.0
1.5
V
BE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
5.5 mA
500
400
300
200
100
IB = 5.0 mA
4.0 mA
3.0 mA
2.0 mA
1.0 mA
500 µA
0
1
2
3
4
V
CE - Collector to Emitter Voltage - V
Data Sheet PU10040EJ01V0DS
3
2SC5289
S-Parameters
(VCE = 3.0 V, IC = 60 mA)
FREQUENCY
S11
S21
S21
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
48.639 106.35 mU
45.93 110.68 mU
MAG.
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
810.84 mU
813.96 mU
816.5 mU
820.32 mU
823.53 mU
138.58
133.87
131.39
128.91
126.37
124.27
122.04
119.84
117.85
115.84
113.83
1.9411 U
1.8066 U
1.6922 U
1.5947 U
1.5047 U
1.4214 U
1.3543 U
1.2811 U
1.2145 U
1.1656 U
1.1211 U
46.46
583.53 mU
590.28 mU
592.75 mU
598.22 mU
601.49 mU
606.01 mU
611.23 mU
618.61 mU
623.46 mU
159.88
158.28
156.45
154.73
153.51
151.61
150.13
148.64
147.37
146.29
144.88
44.993
43.52
43.227 116.71 mU
40.814 121.32 mU
42.529
41.046
39.913
38.572
37.029
35.675
34.898
33.256
38.489 126.6
mU
826
mU
35.858 132.01 mU
33.591 135.99 mU
31.268 140.46 mU
28.982 143.87 mU
26.992 147.44 mU
25.076 152.24 mU
832.11 mU
832.82 mU
835.22 mU
839.52 mU
840.38 mU
629
mU
632.59 mU
(VCE = 3.0 V, IC = 80 mA)
FREQUENCY
S11
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
813.12 mU
816.14 mU
818.21 mU
822.23 mU
825.38 mU
829.15 mU
832.63 mU
834.44 mU
836.5 mU
839.25 mU
842.51 mU
136.29
133.57
131.14
128.59
126.15
124
1.9451 U
1.8087 U
1.6967 U
1.5995 U
1.5075 U
1.4232 U
1.3533 U
1.2662 U
1.2165 U
1.1706 U
49.022 106.65 mU
46.342 112.69 mU
47.457
45.889
44.529
43.227
42.023
40.346
39.234
37.601
36.573
35.034
33.795
603.6 mU
605.91 mU
609.17 mU
615.78 mU
619.82 mU
623.76 mU
630.54 mU
634.29 mU
636.78 mU
644.03 mU
645.68 mU
159.07
157.35
156.06
154.14
152.61
151.12
149.1
43.58
118.33 mU
41.298 123.28 mU
38.838 128.06 mU
36.546 133.55 mU
34.178 137.17 mU
31.984 141.07 mU
29.798 146.25 mU
27.681 148.91 mU
25.898 153.45 mU
121.76
119.51
117.57
115.54
113.57
147.64
146.34
145.35
144.07
1.127
U
(VCE = 3.0 V, IC = 100 mA)
FREQUENCY
S11
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
814.76 mU
819.31 mU
820.45 mU
823.79 mU
827.67 mU
830.69 mU
834.12 mU
836.05 mU
838.39 mU
841.47 mU
842.96 mU
136.05
133.37
130.97
128.45
125.99
123.79
121.57
119.32
117.41
115.41
113.41
1.9314 U
1.7962 U
1.6833 U
1.5864 U
1.4947 U
1.4116 U
1.3432 U
1.2755 U
1.2099 U
1.1664 U
1.1146 U
49.065 107.99 mU
46.439 113.83 mU
43.752 119.44 mU
41.582 123.31 mU
38.993 128.74 mU
48.52
613.88 mU
617.68 mU
620.63 mU
624.8 mU
626.73 mU
631.19 mU
642.25 mU
544.41 mU
546.33 mU
653.15 mU
655.82 mU
158.57
156.93
155.09
153.83
151.85
150.46
148.78
147.45
145.95
144.75
143.5
46.594
45.216
44.018
42.175
40.887
39.995
37.886
36.992
35.305
33.58
36.707 134.1
mU
34.319 138.16 mU
32.113 142.04 mU
30.096 146.83 mU
27.746 150.91 mU
26.175 154.92 mU
4
Data Sheet PU10040EJ01V0DS
2SC5289
(VCE = 3.0 V, IC = 120 mA)
FREQUENCY
S11
S21
S21
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
817.28 mU
820.4 mU
823.36 mU
825.32 mU
829.2 mU
832.76 mU
836.5 mU
837.77 mU
839.95 mU
843.73 mU
845.73 mU
135.92
133.2
1.9053 U
49.017 108.15 mU
46.493 114.57 mU
43.726 120.09 mU
48.654
46.991
45.655
44.155
42.933
40.954
38.463
38.091
36.9
619.53 mU
621.8 mU
626.29 mU
630.47 mU
635.85 mU
638.73 mU
647.33 mU
649.58 mU
655.77 mU
657.89 mU
661.28 mU
158.16
156.39
154.92
153.42
151.35
150.05
148.43
147
1.772
U
130.75
128.24
125.81
123.66
121.44
119.19
117.27
115.36
113.3
1.6595 U
1.5695 U
1.4774 U
41.45
124.51 mU
39.018 129.92 mU
36.696 135.38 mU
34.448 139.38 mU
32.257 143.42 mU
30.067 147.59 mU
27.979 151.38 mU
25.164 155.57 mU
1.394
U
1.3251 U
1.2596 U
1.1933 U
1.1516 U
1.1061 U
145.6
35.674
33.967
144.41
143.06
(VCE = 3.6 V, IC = 60 mA)
FREQUENCY
S11
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
48.44
MAG.
105.45 mU
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
808.3 mU
812.04 mU
814.93 mU
818.28 mU
821.86 mU
825.72 mU
829.72 mU
831.5 mU
833.66 mU
836.78 mU
839.53 mU
136.65
133.93
131.51
128.96
126.44
124.19
122.08
119.79
117.82
115.85
113.76
1.9727 U
1.8331 U
46.052
44.817
43.513
42.255
40.746
39.637
37.827
36.841
35.421
33.849
32.978
581.18 mU
583.78 mU
590.19 mU
593.64 mU
595.96 mU
600.82 mU
607.63 mU
611.6 mU
616.97 mU
621.4 mU
626.63 mU
159.62
157.84
156.29
154.41
153.05
151.54
149.72
148.28
146.8
45.887 112.14 mU
43.075 116.65 mU
40.627 121.29 mU
38.187 126.81 mU
1.717
U
1.6198 U
1.5247 U
1.4443 U
1.3633 U
1.3006 U
1.2319 U
1.1841 U
1.1409 U
35.744 131.1
mU
33.442 135.38 mU
31.143 139.8
28.858 143.3
mU
mU
26.723 148.34 mU
24.857 152.76 mU
145.82
144.7
(VCE = 3.6 V, IC = 80 mA)
FREQUENCY
S11
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
810.02 mU
812.97 mU
816.71 mU
819.83 mU
823.48 mU
825.71 mU
830.91 mU
831.7 mU
833.9 mU
837.44 mU
839.42 mU
136.4
1.9728 U
1.8375 U
1.7238 U
1.5254 U
1.5286 U
1.4464 U
1.3721 U
1.3042 U
1.2261 U
1.1905 U
1.1422 U
48.837 105.15 mU
46.192 113.25 mU
43.597 117.53 mU
41.101 123.16 mU
38.741 127.71 mU
36.372 133.19 mU
33.966 136.97 mU
31.579 141.48 mU
29.511 145.67 mU
27.144 149.19 mU
25.406 153.36 mU
47.085
45.405
44.256
42.965
41.206
40.31
593.74 mU
600.04 mU
603.01 mU
610.67 mU
613.44 mU
616.32 mU
625.55 mU
626.62 mU
632.27 mU
638.49 mU
639.69 mU
158.81
157.07
155.32
153.74
152.03
150.5
133.62
131.18
128.68
126.14
123.85
121.82
119.52
117.61
115.59
113.49
38.649
37.348
35.89
148.79
147.4
145.74
144.59
143.59
34.415
33.499
Data Sheet PU10040EJ01V0DS
5
2SC5289
(VCE = 3.6 V, IC = 100 mA)
FREQUENCY
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
811.66 mU
814.26 mU
818.45 mU
820.54 mU
824.22 mU
828.13 mU
831.24 mU
833.15 mU
835.39 mU
838.01 mU
841.32 mU
136.12
133.43
131.04
128.48
126.03
123.78
121.67
119.38
117.42
115.39
113.33
1.9697 U
1.8813 U
1.7121 U
1.6163 U
1.5227 U
1.4383 U
1.3657 U
1.2999 U
49.003 107.38 mU
46.439 113.38 mU
43.815 119.26 mU
41.259 123.58 mU
38.087 129.16 mU
36.568 133.74 mU
34.401 137.58 mU
32.191 142.12 mU
29.872 146.24 mU
27.857 150.55 mU
25.845 154.24 mU
47.804
46.29
605.34 mU
610.91 mU
615.04 mU
619.69 mU
623.96 mU
626.33 mU
635.21 mU
635.78 mU
640.55 mU
644.12 mU
651.67 mU
158.29
156.55
155.21
153.57
151.68
150.24
148.57
147.17
145.67
144.38
143.26
44.804
43.22
42.119
40.513
39.212
37.807
36.259
34.921
33.691
1.232
U
1.1855 U
1.1384 U
(VCE = 3.6 V, IC = 120 mA)
FREQUENCY
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
1 500.000 000
1 600.000 000
1 700.000 000
1 800.000 000
1 900.000 000
2 000.000 000
2 100.000 000
2 200.000 000
2 300.000 000
2 400.000 000
2 500.000 000
813.57 mU
816.62 mU
818.87 mU
822.29 mU
826.68 mU
829.06 mU
833.73 mU
834.92 mU
836.52 mU
840.11 mU
841.88 mU
135.96
133.29
130.77
128.31
125.87
123.66
121.53
119.23
117.34
115.29
113.25
1.9455 U
1.8105 U
1.6937 U
1.5976 U
1.5032 U
1.4259 U
1.3524 U
1.2885 U
1.2192 U
1.1746 U
1.1257 U
48.984 108.18 mU
46.497 113.89 mU
43.778 119.24 mU
41.362 124.45 mU
39.125 128.74 mU
36.705 134.73 mU
34.544 138.42 mU
32.201 142.75 mU
29.821 147.57 mU
27.779 150.95 mU
25.995 155.15 mU
48.385
47.178
45.229
44.199
42.33
614.69 mU
616.3 mU
620.14 mU
624.25 mU
628.44 mU
629.25 mU
639.79 mU
642.22 mU
645.15 mU
652.07 mU
653.43 mU
158.01
156.31
154.6
153.27
151.55
150.25
148.21
146.78
145.54
144.33
143.03
41.256
39.367
38.267
36.681
35.369
34.088
6
Data Sheet PU10040EJ01V0DS
2SC5289
CHARACTERISTICS CURVES
OUTPUT POWER / COLLECTOR EFFICIENCY / COLLECTOR CURRENT /
POWER GAIN VS. INPUT POWER
30
25
20
15
10
5
f = 1.9 GHz, VCC = 3.6 V,
ICq = 1 mA (Duty1/8)
Pout
ηC
80
60
40
20
0
ηC (%)
30
20
10
0
IC
(mA)
IC
8
7
GP
(dB)
GP
6
5
4
5
10
15
20
25
PIN (dBm)
(Reference) Data from the above graph
P–1
27.5
dBm
ηC (at P–1)
IC (at P–1)
GL
72
27
%
mA
dB
6.7
Note ICq is stand for the collector current when input power off.
Above the ICq and IC are showing current value at 1/8 duty operation.
In case of CW (continuous wave) operation, the current value becomes eight times.
Actual bias condition; VCE = 3.6 V, ICq = 8 mA @ Pin = OFF.
Data Sheet PU10040EJ01V0DS
7
2SC5289
ZIN (Ω), ZOUT (Ω) Data
90
ZIN
RESISTANCE COMPONENT
R
Zo
ZOUT
- 9 0
VCC = 3.6 V, ICq = 1 mA, duty = 1/8
f (GHz)
1.9
Zin (Ω)
Zout (Ω)
7.05 + j8.52
16.0 – j3.69
8
Data Sheet PU10040EJ01V0DS
2SC5289
(REFERENCE PERFORMANCE)
VCE = 3.0 V, Icq = 8 mA (RF OFF)
f = 1.9 GHz, NEC TEST BOARD
Input: π/4 DQPSKMOD. 384 Kbps, α = 0.5
PN9 ∆f = 600 kHz, <CW>
25
20
15
10
5
–45
–50
–55
–60
–65
–70
Pout
250
200
150
100
Padj (Low)
Padj (Up)
IC
4
3
2
1
0
50
0
IB
–75
0
5
10
15
20
Pin (dBm)
Data Sheet PU10040EJ01V0DS
9
2SC5289
TEST BOARD Unit (mm)
3.6
4.3
2.4
2.4
7.0
2.4
2.4
1.9
4.6
4.8
2.4
In
2.4
Out
0.5
0.6
2.4
8.7
42.0
t = 0.4 mm, polyimide substrate
10
Data Sheet PU10040EJ01V0DS
2SC5289
The application circuit and circuit constants shown in this document are for reference only and may not be employed
for mass production of the application system.
•
The information in this document is current as of October, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10040EJ01V0DS
11
2SC5289
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
FAX: +852-3107-7309
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-528-0301
FAX: +82-2-528-0302
NEC Electron Devices European Operations
http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
0110
相关型号：
2SC5295G
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC
2SC5295GQ
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC
2SC5295GR
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SSMINI3-F3, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明