2SC5181FB-A [NEC]
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3;
| 型号： | 2SC5181FB-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3 放大器 ISM频段 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC5181
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
•
Low current consumption and high gain
PACKAGE DIMENSIONS
(Units: mm)
1.6 ± 0.1
|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
Ultra Super Mini-Mold package
•
0.8 ± 0.1
2
ORDERING INFORMATION
PART
QUANTITY
NUMBER
ARRANGEMENT
3
1
2SC5181
50 units/box
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
2SC5181-T1
3 000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
V
V
PIN CONNECTIONS
Collector to Emitter Voltage VCEO
3
1. Emitter
2. Base
3. Collector
Emitter to Base Voltage
Collector Current
VEBO
IC
2
V
10
30
mA
mW
°C
°C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
Tj
150
Tstg
–65 to +150
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published November 1996 N
Printed in Japan
1994
©
2SC5181
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
ICBO
IEBO
MIN.
TYP.
MAX.
100
UNIT
nA
CONDITIONS
VCB = 5 V, IE = 0
100
nA
VEB = 1 V, IC = 0
*1
hFE
70
8.0
7.0
140
VCE = 2 V, IC = 7 mA
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
|S21e|2
|S21e|2
NF
10.5
9.0
1.5
1.5
13
dB
dB
VCE = 2 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 2 V, IC = 3 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 2 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCB = 2 V, IE = 0 mA, f = 1 MHz
2.0
2.0
dB
Noise Figure (2)
NF
dB
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
fT
10
GHz
GHz
pF
fT
8.5
12
*2
Cre
0.4
0.6
*1. Measured with pulses: Pulse width ≤ 350 µs, duty cycle ≤ 2 %, pulsed
*2. Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
Class
FB
84
Marking
hFE
70 to 140
2
2SC5181
CHARACTERISTICS CURVES (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
Passive air cooling
200
VCE = 2 V
40
30
20
100
10
0
30 mW
0
50
100
150
0.5
1.0
100
20
T
A
– Ambient Temperature – °C
V
BE – Base to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER
500
25
20
15
200
100
µ
200
180
160
140
120
100
80
A
A
A
A
A
A
A
V
CE = 2 V
µ
µ
µ
µ
µ
µ
50
10
5
VCE = 1 V
60
µA
µ
A
40
20
10
µ
I = 20 A
B
0
1.0
2.0
3.0
1
2
5
10
20
50
I – Collector Current – mA
C
V
CE – Collector to Emitter Voltage – V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
f = 2 GHz
V
CE = 2 V
15
10
5
V
CE = 2 V
10
V
CE = 1 V
V
CE = 1 V
5
1
2
3
5
7
10
20
0
1
2
3
5
7
10
I
C
– Collector Current – mA
I
C
– Collector Current – mA
3
2SC5181
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
0.8
0.6
0.4
0.2
f = 2 GHz
f = 1 MHz
V
CE = 1 V
CE = 2 V
2
1
V
1
2
3
5
7
10
20
0.0
2.0
4.0
6.0
8.0
10.0
I
C
– Collector Current – mA
VCB – Collector to Base Voltage – V
4
2SC5181
S-PARAMETERS
VCE = 1 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.892
0.795
0.704
0.653
0.598
0.524
0.464
0.415
0.355
ANG
–31.5
–40.9
–50.9
–60.1
–66.6
–73.7
–80.6
–88.8
–97.7
MAG
3.159
2.964
2.762
2.674
2.590
2.409
2.285
2.182
2.032
ANG
142.3
130.8
119.7
110.1
103.0
94.9
MAG
0.113
0.152
0.180
0.204
0.228
0.253
0.265
0.270
0.278
ANG
64.7
58.9
53.0
49.8
45.9
42.5
41.3
39.6
35.7
MAG
0.934
0.847
0.759
0.726
0.688
0.636
0.575
0.530
0.495
ANG
–25.9
–32.1
–39.9
–47.4
–53.1
–58.2
–64.2
–68.9
–74.6
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
87.2
81.7
74.6
VCE = 1 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.653
0.517
0.422
0.362
0.301
0.245
0.209
0.175
0.132
ANG
–48.4
–59.5
–68.5
–76.1
–81.4
–88.0
–92.7
–105.8
–121.6
MAG
6.121
5.199
4.502
4.084
3.661
3.279
3.024
2.796
2.535
ANG
124.0
111.4
100.6
92.8
MAG
0.095
0.123
0.143
0.165
0.183
0.204
0.220
0.230
0.244
ANG
59.6
55.7
53.0
53.5
51.6
50.1
49.7
50.0
46.8
MAG
0.754
0.629
0.533
0.493
0.448
0.411
0.369
0.334
0.311
ANG
–37.3
–43.1
–49.5
–54.2
–57.6
–61.1
–66.7
–69.5
–75.0
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
86.8
79.5
74.1
70.4
64.5
VCE = 1 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.514
0.389
0.307
0.253
0.202
0.157
0.130
0.108
0.077
ANG
–56.3
–66.9
–73.5
–79.7
–85.5
–91.8
–96.2
–116.1
–142.5
MAG
7.156
5.830
4.939
4.391
3.865
3.440
3.155
2.900
2.614
ANG
115.3
103.5
93.6
86.9
81.4
74.7
70.1
67.0
61.5
MAG
0.082
0.109
0.131
0.151
0.175
0.196
0.213
0.227
0.241
ANG
57.8
57.0
56.4
56.4
55.2
53.8
53.5
53.3
50.7
MAG
0.648
0.530
0.446
0.414
0.379
0.347
0.313
0.283
0.268
ANG
–40.3
–44.6
–48.9
–52.5
–55.2
–58.4
–63.6
–65.6
–71.7
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
VCE = 1 V, IC = 7 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.405
0.305
0.229
0.184
0.141
0.106
0.086
0.071
0.060
ANG
–61.9
–72.5
–78.2
–84.9
–91.4
–98.8
–104.3
–136.6
–174.6
MAG
7.590
6.043
5.059
4.454
3.886
3.455
3.162
2.898
2.606
ANG
109.4
98.4
89.2
83.2
78.0
71.6
67.6
64.6
59.4
MAG
0.077
0.101
0.124
0.145
0.169
0.191
0.210
0.224
0.237
ANG
59.1
59.0
57.9
59.2
57.6
56.2
55.3
55.9
52.7
MAG
0.570
0.469
0.399
0.374
0.347
0.322
0.290
0.264
0.249
ANG
–40.5
–43.6
–46.6
–49.4
–51.8
–54.5
–59.5
–61.4
–67.2
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
5
2SC5181
VCE = 1 V, IC = 10 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.324
0.232
0.167
0.128
0.094
0.067
0.055
0.068
0.083
ANG
–71.3
MAG
7.550
5.924
4.927
4.307
3.740
3.326
3.041
2.781
2.498
ANG
104.5
94.2
85.5
80.0
74.9
68.7
64.9
62.2
56.9
MAG
0.069
0.096
0.119
0.141
0.165
0.187
0.207
0.219
0.235
ANG
62.8
61.0
59.7
61.4
60.6
58.2
57.6
57.4
54.8
MAG
0.526
0.434
0.375
0.355
0.335
0.314
0.283
0.262
0.247
ANG
600.00
–39.4
–40.5
–42.1
–44.8
–47.0
–49.2
–54.0
–56.1
–62.0
800.00
–82.5
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
–89.5
–98.6
–110.3
–127.3
–140.2
–176.6
153.2
VCE = 2 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.901
0.811
0.719
0.671
0.621
0.549
0.488
0.438
0.380
ANG
–29.6
–38.5
–47.8
–56.7
–62.9
–69.2
–75.6
–83.6
–91.1
MAG
3.172
2.995
2.797
2.715
2.646
2.467
2.343
2.243
2.095
ANG
143.7
132.6
121.7
112.2
105.3
97.5
MAG
0.106
0.143
0.172
0.196
0.220
0.240
0.255
0.261
0.268
ANG
66.0
59.6
55.0
51.4
47.9
44.4
43.6
41.6
37.8
MAG
0.940
0.861
0.778
0.745
0.712
0.659
0.601
0.556
0.522
ANG
–24.4
–30.3
–37.6
–45.0
–50.5
–55.0
–60.8
–65.6
–70.9
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
89.8
84.3
77.3
VCE = 2 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.678
0.543
0.447
0.388
0.325
0.270
0.231
0.193
0.148
ANG
–44.9
–55.3
–63.1
–69.9
–74.0
–78.9
–82.5
–93.2
–103.1
MAG
6.256
5.350
4.650
4.225
3.809
3.408
3.144
2.918
2.647
ANG
125.7
113.4
102.7
94.8
MAG
0.088
0.114
0.137
0.157
0.176
0.195
0.214
0.223
0.236
ANG
60.5
56.1
54.8
54.2
53.1
51.3
51.5
51.1
48.8
MAG
0.778
0.656
0.563
0.519
0.481
0.441
0.397
0.363
0.343
ANG
–34.8
–40.4
–46.1
–50.7
–54.5
–57.3
–62.3
–65.0
–70.0
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
88.9
81.8
76.3
72.7
66.8
6
2SC5181
VCE = 2 V, IC = 5 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.539
0.415
0.332
0.280
0.228
0.183
0.157
0.123
0.084
ANG
–51.7
–61.1
–66.2
–71.9
–74.8
–78.2
–80.9
–95.6
–108.3
MAG
7.390
6.057
5.136
4.579
4.043
3.597
3.298
3.042
2.746
ANG
117.1
105.3
95.5
88.7
83.3
76.8
72.2
69.1
63.7
MAG
0.080
0.103
0.125
0.146
0.168
0.187
0.207
0.218
0.232
ANG
61.7
58.5
57.5
58.5
57.3
55.4
55.4
55.5
52.6
MAG
0.676
0.560
0.478
0.445
0.413
0.383
0.345
0.317
0.301
ANG
–37.8
–41.6
–45.6
–49.2
–51.6
–54.0
–58.9
–61.2
–66.0
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
VCE = 2 V, IC = 7 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.442
0.331
0.257
0.213
0.168
0.132
0.110
0.081
0.048
ANG
–56.3
–65.1
–67.8
–73.1
–74.5
–77.3
–79.7
–99.2
–123.7
MAG
7.920
6.345
5.311
4.689
4.103
3.643
3.335
3.065
2.760
ANG
111.3
100.3
91.1
85.1
80.1
73.8
69.8
66.9
61.7
MAG
0.070
0.097
0.118
0.141
0.162
0.184
0.204
0.214
0.231
ANG
63.0
59.0
57.7
60.4
59.5
58.3
57.4
57.5
54.8
MAG
0.610
0.507
0.434
0.407
0.386
0.359
0.323
0.301
0.286
ANG
–38.1
–40.7
–43.4
–45.9
–48.0
–50.5
–54.8
–56.9
–62.3
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
VCE = 2 V, IC = 10 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
0.358
0.264
0.199
0.158
0.121
0.089
0.073
0.052
0.030
ANG
–60.7
–68.8
–70.8
–75.7
–77.9
–80.4
–82.4
–114.2
–166.0
MAG
8.135
6.411
5.335
4.674
4.068
3.610
3.301
3.027
2.724
ANG
106.8
96.5
87.8
82.4
77.5
71.4
67.8
65.1
59.9
MAG
0.068
0.090
0.113
0.139
0.157
0.180
0.198
0.211
0.228
ANG
61.8
62.0
61.6
62.5
61.1
59.7
59.3
58.9
56.0
MAG
0.565
0.475
0.414
0.392
0.377
0.352
0.321
0.298
0.286
ANG
–36.5
–38.3
–40.1
–42.2
–44.8
–46.6
–50.6
–52.5
–58.0
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
7
2SC5181
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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