2SC3585-R [NEC]

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型号：	2SC3585-R
厂家：	NEC
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DATA SHEET

SILICON TRANSISTOR

2SC3585

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3585 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. The

2SC3585 features excellent power gain with very low-noise figures. The

2SC3585 employs direct nitride passivated base surface process (DNP

process) which is an NEC proprietary new fabrication technique which

provides excellent noise figures at high current values. This allows

excellent associated gain and very wide dynamic range.

(Units: mm)

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

1.8 dB TYP.

9 dB TYP.

@f = 2.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Marking

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

1.5

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

PIN CONNECTIONS

1. Emitter

2. Base

T^j

150

T^stg

65 to +150

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

250

I^EBO

V^EB= 1 V, I^C= 0

h^FE*

f^T

100

V^CE= 6 V, I^C= 10 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

GHz

C^re**

0.3

8.0

0.8

V^CB= 10 V, I^E= 0, f = 1.0 MHz

S^21e

6.0

V^CE= 6 V, I^C= 10 mA, f = 2.0 GHz

V^CE= 6 V, I^C= 5 mA, f = 2.0 GHz

MAG

1.8

3.0

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

h^FEClassification

Class

Marking

h^FE

R43/Q *

R43

R44/R *

R44

R45/S *

R45

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10361EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1984

2SC3585

TYPICAL CHARACTERISTICS (T^A= 25 C)

FEED-BACK CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

f = 1.0 MHz

Free Air

200

0.7

0.5

100

0.3

0.2

100

150

T^A-Ambient Temperature-°C

0.1

20 30

V^CB-Collector to Base Voltage-V

DC CURRENT GAIN vs.

COLLECTOR CURRENT

INSERTION GAIN vs.

COLLECTOR CURRENT

200

VCE = 6 V

f = 2.0 GHz

100

0.5

20 30

I^C-Collector Current-mA

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

INSERTION GAIN, MAXIMUM AVAILABLE

GAIN vs. FREQUENCY

VCE = 6 V

I^C= 10 mA

MAG

|S21e|²

20 30

0.1

0.2 0.3

0.5 7.0 1.0

2.0 3.0

I^C-Collector Current-mA

f-Frequency-GHz

2SC3585

NOISE FIGURE vs.

COLLECTOR CURRENT

VCE = 6 V

f = 2.0 GHz

0.5

50 70

I^C-Collector Current-mA

S-PARAMETER

V^CE= 6.0 V, I^C= 3.0 mA, Z^O= 50

f (MHz)

200

S¹¹

23.1

40.6

51.1

58.9

65.6

73.1

82.2

84.9

88.2

104.1

S²¹

153.3

131.6

118.4

104.9

98.0

S¹²

46.5

58.7

60.3

60.2

61.2

61.1

60.1

59.5

58.7

56.8

S²²

0.858

0.724

0.580

0.457

0.362

0.304

0.232

0.179

0.147

0.108

8.499

6.923

5.951

4.615

4.134

3.412

3.180

2.763

2.726

2.378

0.030

0.060

0.080

0.099

0.106

0.129

0.148

0.154

0.188

0.197

0.905

0.826

0.749

0.666

0.614

0.574

0.542

0.514

0.483

0.455

13.5

21.2

27.0

28.6

30.1

30.0

31.7

35.2

40.1

42.6

400

600

800

1000

1200

1400

1600

1800

2000

88.9

82.0

75.7

70.5

64.9

V^CE= 6.0 V, I^C= 10.0 mA, Z^O= 50

f (MHz)

200

S¹¹

37.0

53.6

56.0

57.6

58.1

54.2

56.5

55.0

48.9

65.6

S²¹

16.141

10.096

7.640

5.564

4.787

3.876

3.573

3.058

2.997

2.590

S²¹

133.9

111.5

101.4

90.7

S¹²

52.5

70.6

73.0

71.7

70.6

70.3

68.3

68.9

66.5

66.2

S²²

19.4

22.4

24.0

22.8

23.3

22.1

24.8

27.9

31.4

36.5

0.613

0.406

0.285

0.214

0.156

0.130

0.105

0.065

0.042

0.018

0.021

0.053

0.064

0.089

0.095

0.119

0.141

0.158

0.178

0.202

0.781

0.651

0.590

0.548

0.526

0.506

0.489

0.470

0.439

0.426

400

600

800

1000

1200

1400

1600

1800

2000

86.0

79.3

74.0

69.4

65.3

60.7

2SC3585

S-PARAMETER

S11e, S22e-FREQUENCY

CONDITION VCE = 6 V

200 MHz Step

0.15

0.10

0.40

110

1.4

120

0.2

)

+JX

––––

(

1.0

2.0 GHz

S22e

REACTANCE COMPONENT

––––

Z^O

IC = 10 mA

0.2

(

)

0.2 GHz

S22e

0.4

0.1

0.6

IC = 3 mA

0.8

0.2

1.0

O M

0.2 GHz

S11e

3 . 0

I V

0.6

0.7

9 − 0

S^21e-FREQUENCY

CONDITION V^CE= 6 V

S12e-FREQUENCY

CONDITION V^CE= 6 V

90°

120°

60°

2.0 GHz

IC = 10 mA

0.2 GHz

IC = 10 mA

150°

30°

150°

30°

S21e

S12e

IC = 3 mA

1.0 GHz

IC = 3 mA

2.0 GHz

1.0 GHz

0.2 GHz

2.0 GHz

180°

0° 180°

0°

0.04 0.08 0.12 0.16 0.20

−150°

−30°

−150°

−30°

−60°

−120°

−90°

2SC3585

[MEMO]

2SC3585

[MEMO]

2SC3585

[MEMO]

2SC3585

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this

document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

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