2SC3545 [NEC]
UHF OSCILLTOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD; 超高频子与龙头NPN硅外延型晶体管MINI模具
| 型号： | 2SC3545 |
| 厂家： | 
NEC |
| 描述： | UHF OSCILLTOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 文件： | 总8页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SC3545
UHF OSCILLATOR AND MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DESCRIPTION
The 2SC3545 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and mixer in a tuner of a TV receiver.
PACKAGE DIMENSIONS
(Units: mm)
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially
recommended for Hybrid Integrated Circuit and other applications.
2.8±0.2
1.5
+0.1
−0.15
0.65
2
FEATURES
•
•
•
High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
3
1
rb’b = 4 ps TYP.
Low Collector to Base Time Constant; CC
Low Feedback Capacitance; Cre = 0.48 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Marking
Maximum Voltages and Current
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
30
15
3.0
50
V
V
V
mA
PIN CONNECTIONS
Maximum Power Dissipation
Total Power Dissipation
Maximum Temperature
Junction Temperature
Storage Temperature
1. Emitter
2. Base
3. Collector
PT
150
mW
Tj
125
C
C
Tstg
65 to +125
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
Collector Cutoff Current
DC Current Gain
SYMBOL
MIN.
TYP.
100
MAX.
0.1
UNIT
A
TEST CONDITIONS
ICBO
VCB = 12 V, IE = 0
hFE
50
250
0.5
VCE = 10 V, IC = 5.0 mA
IC = 10 mA, IB = 1.0 mA
VCE = 10 V, IE = 5.0 mA
Collector Saturation Voltage
Gain Bandwidth Product
Output Capacitance
VCE(sat)
fT
V
MHz
pF
1.3
2.0
0.48
4
Cob
1.0
10
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz
rb’b
Collector to Base Time Constant
CC
ps
hFE Classification
Class
Marking
hFE
M/P *
T42
L/Q *
T43
K/R *
T44
50 to 100
70 to 140
120 to 250
* Old Specification / New Specification
Document No. P10358EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
1984
2SC3545
TYPICAL CHARACTERISTICS (TA = 25 C)
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
3
2
f = 1.0 MHz
Free air
250
200
150
100
50
1
0.7
0.5
0.3
0.2
0
25
50
75
100
125
0.1
1
2
3
5
7
10
20 30
T
A-Ambient Temperature-°C
V
CB-Collector to Base Voltage-V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
200
100
50
15
V
CE = 10 V
V
CE = 10 V
f = 1.0 GHz
MAG
10
2
|S21e
|
5
0
20
10
0.5
1
5
10
50
0.5
1
5
10
50 70
I
C-Collector Current-mA
I
C-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
COLLECTOR TO BASE TIME CONSTANT
vs. COLLECTOR CURRENT
10
15
10
5.0
3.0
2.0
1.0
0.5
5
0
0.3
0.2
V
CE = 10 V
V
CE = 10 V
f = 31.9 MHz
0.1
0.1
0.5 1.0
5.0 10
30
0.5
1
5
10
50 70
I
C-Collector Current-mA
I
C-Collector Current-mA
2
2SC3545
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz)
200
S11
S11
80.6
S21
S21
114.1
92.9
81.7
70.2
62.8
54.4
47.9
40.9
S12
S12
60.2
55.5
60.2
62.8
64.6
65.7
66.4
68.0
S22
S22
0.472
0.310
0.261
0.262
0.270
0.288
0.323
0.356
7.581
4.029
2.926
2.118
1.860
1.504
1.413
1.201
0.037
0.055
0.077
0.098
0.108
0.125
0.148
0.160
0.780
0.723
0.721
0.698
0.691
0.688
0.664
0.658
8.2
15.1
18.8
22.6
25.1
30.7
35.1
39.3
400
117.3
139.9
160.4
176.6
172.3
162.4
151.0
600
800
1000
1200
1400
1600
VCE = 10 V, IC = 10 mA, ZO = 50
f (MHz)
200
S11
S11
101.4
136.2
158.8
173.7
172.6
162.7
154.5
144.7
S21
S21
104.9
87.4
78.0
67.2
60.1
52.5
46.3
39.5
S12
S12
49.5
65.2
67.3
68.2
69.4
70.1
70.4
70.3
S22
S22
8.5
0.323
0.246
0.247
0.273
0.299
0.314
0.353
0.380
8.735
4.383
3.120
2.259
1.968
1.589
1.483
1.257
0.037
0.052
0.074
0.086
0.102
0.126
0.146
0.166
0.711
0.693
0.696
0.679
0.671
0.663
0.648
0.648
400
13.8
16.8
20.0
23.8
26.6
33.7
38.5
600
800
1000
1200
1400
1600
3
2SC3545
S-PARAMETER
S11e, S22e-FREQUENCY
CONDITION VCE = 10 V, 200 MHz Step
0.15
0.10
0.40
90
80
110
600
1.4
120
0.2
2.0
N
E
40
M
CO
E
30
)
A
E
+JX
R
––––
(
E
V
Z
I
T
1.0
I
20
1.6 GHz
50
REACTANCE COMPONENT
R
––––
0.2 GHz
0.2
(
)
ZO
S11e
0.4
0.1
0.6
0.8
S22e
0.2
T
N
0.2 GHz
O
P
O M
C
1.6 GHz
IC = 5 mA
IC = 10 mA
3 . 0
R
E
I V
G
0.6
0.7
9 − 0
S21e-FREQUENCY
CONDITION VCE = 10 V, 200 MHz Step
S12e-FREQUENCY
CONDITION VCE = 10 V, 200 MHz Step
90°
90°
120°
120°
60°
60°
0.2 GHz
1.6 GHz
150°
30°
150°
30°
S12e
S21e
0.2 GHz
1.6 GHz
180°
0° 180°
0°
0.05 0.1 0.15 0.2 0.25
0
2
4
6
8
10
0
IC = 5 mA
IC = 10 mA
IC = 5 mA
IC = 10 mA
−150°
−30°
−150°
−30°
−60°
−60°
−120°
−120°
−90°
−90°
4
2SC3545
[MEMO]
5
2SC3545
[MEMO]
6
2SC3545
[MEMO]
7
2SC3545
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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