2SC2690-R-AZ [NEC]
Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, MP-5, 3 PIN;型号: | 2SC2690-R-AZ |
厂家: | NEC |
描述: | Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, MP-5, 3 PIN |
文件: | 总4页 (文件大小:1559K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
S2ILISCOCN 2PO6W9ER0T,R2A6NS9IS0TOAR
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION
DESCRIPTION
These products are general purpose transistors designed for use
in audio and radio frequency power amplifiers.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±±.2
2.8 MAX.
FEATURES
• Suitable for use in driver stage of 50 to 100 W audio amplifiers
and output stage of TV vertical deflection circuit.
• High voltage and high fT
VCEO = 120 V (2SC2690) / 160 V (2SC2690A)
fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A)
1 2
3
12 TYP.
• Complementary to the 2SA1220 and 2SA1220A PNP transistors.
+±.±8
±.55
–±.±5
ORDERING INFORMATION
PART NUMBER
PACKAGE
+±.±8
±.8
–±.±5
1.2 TYP.
2SC2690
TO-126 (MP-5)
TO-126 (MP-5)
TO-126 (MP-5)
TO-126 (MP-5)
2.3 TYP.
2.3 TYP.
Note
1. Emitter
2. Collector
3. Base
2SC2690-AZ
2SC2690A
Note
2SC2690A-AZ
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
2SA2690
2SA2690A
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
PT
Tj
Tstg
120
120
160
160
V
V
V
A
A
A
W
W
°C
°C
5.0
1.2
2.5
0.3
1.2
20
Collector Current (DC)
Collector Current (pulse) Note
Base Current (DC)
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Junction Temperature
150
Storage Temperature
−55 to +150
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17501EJ2V0DS00 (2nd edition)
The mark shows major revised points.
(Previous No. TC-3586)
Date Published March 2005 NS CP(K)
Printed in Japan
1984
2SC2690,2690A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
1.0
UNIT
µA
Collector Cut-off Current
ICBO
VCB = 120. V, IE = 0
Emitter Cut-off Current
IEBO
VEB = 3.0 V, IC = 0
1.0
µA
Note
DC Current Gain
hFE1
VCE = 5.0 V, IC = 5.0 mA
VCE = 5.0 V, IC = 0.3 A
IC = 1.0 A, IB = 0.2 A
35
60
150
140
0.4
1.0
175
26
hFE2
320
0.7
1.3
Note
Collector Saturation Voltage
VCE(sat)
VBE(sat)
fT
V
V
Note
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
VCE = 5.0 V, IC = 0.2 A
MHz
pF
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
MARKING
R
Q
P
hFE2
60 to 120
100 to 200
160 to 320
Remark Test condition: VCE = 5.0 V, IC = 0.3 A
2
Data Sheet D17501EJ2V0DS
2SC2690,2690A
TYPICAL CHARACTERISTICS (TA = 25°C)
3
Data Sheet D17501EJ2V0DS
2SC2690,2690A
•
The information in this document is current as of March, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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appear in this document.
•
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•
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(Note)
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defined above).
M8E ±2. 11-1
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