2SA1222-AZ [NEC]
Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | 2SA1222-AZ |
| 厂家： | 
NEC |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
PACKAGE DRAWING (UNIT: mm)
•
Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
•
Complementary transistor with 2SC2958 and 2SC2959
VCEO = 140 V: 2SA1221/2SC2958
VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT
Ratings
−160
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
−140/–160
−5.0
V
V
−500
mA
A
−1.0
1.0
W
°C
°C
Tj
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −100 V, IE = 0
VEB = −5.0 V, IC = 0
MIN.
TYP.
MAX.
−200
−200
400
Unit
nA
IEBO
nA
VCE = −2.0 V, IC = −100 mA
VCE = −5.0 V, IC = −20 mA
IC = −1.0 A, IB = −0.2 A
hFE **
VBE **
VCE(sat) **
VBE(sat) **
Cob
100
150
−0.64
−0.6
−1.1
24
−0.6
−0.7
−0.9
−0.3
40
DC base voltage
V
V
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
IC = −1.0 A, IB = −0.2 A
V
VCB = −10 V, IE = 0, f = 1.0 MHz
VCE = −10 V, IE = 20 mA
pF
MHz
fT
30
45
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
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The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
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•
•
•
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M8E 00. 4
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