2N7002K [NCEPOWER]
NCE N-Channel Enhancement Mode Power MOSFET; NCE N沟道增强型功率MOSFET
| 型号： | 2N7002K |
| 厂家： | 
WUXI NCE POWER SEMICONDUCTOR CO., LTD |
| 描述： | NCE N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总7页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2N7002K
NCE N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● VDS = 60V,ID = 0.3A
RDS(ON) < 3Ω @ VGS=4.5V
RDS(ON) < 2Ω @ VGS=10V
ESD Rating：HBM 2500V
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
Marking and pin Assignment
●Battery Operated Systems
●Solid-State Relays
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
7002K
2N7002K
SOT-23
Ø180mm
8 mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VDS
VGS
ID
±20
0.3
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
0.8
A
IDM
Maximum Power Dissipation
0.35
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
V
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2N7002K
Zero Gate Voltage Drain Current
IDSS
IGSS
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
1
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
±10
uA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=0.2A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
1
1.5
1.2
1.1
2.5
3
V
Ω
Ω
S
Drain-Source On-State Resistance
2
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
0.1
Clss
Coss
Crss
21
11
50
25
5
PF
PF
PF
V
DS=25V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
4.2
td(on)
tr
td(off)
tf
10
50
17
10
nS
nS
nS
nS
Turn-on Rise Time
VDD=30V,ID=0.2A
GS=10V,RGEN=10Ω
V
Turn-Off Delay Time
Turn-Off Fall Time
V
DS=10V,ID=0.3A,
Total Gate Charge
Qg
1.7
3
nC
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=0.2A
1.3
0.2
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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2N7002K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
ton
toff
tf
tr
td(on)
VOUT
VIN
td(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 3 Output CHARACTERISTICS
Figure 4 Transfer Characteristics
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 5 Drain-Source On-Resistance
Figure 6 Rdson vs Vgs
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2N7002K
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 7 Gate Charge
Figure 8 Source-DrainDiode Forward
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9 Drain-Source On-Resistance
Figure 10 Safe Operation Area
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
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2N7002K
Square Wave Pluse Duration(sec)
Figure 12 Normalized Maximum Transient Thermal Impedance
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2N7002K
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Dimensions in Millimeters
Symbol
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Semiconductor Co., Ltd
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2N7002K
ATTENTION:
■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
■
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■ In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
■
This catalog provides information as of Sep, 2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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