N16T1630C2BZ2-70 [NANOAMP]

16Mb Ultra-Low Power Asynchronous CMOS SRAM; 16Mb的超低功耗异步SRAM CMOS
N16T1630C2BZ2-70
型号: N16T1630C2BZ2-70
厂家: NANOAMP SOLUTIONS, INC.    NANOAMP SOLUTIONS, INC.
描述:

16Mb Ultra-Low Power Asynchronous CMOS SRAM
16Mb的超低功耗异步SRAM CMOS

静态存储器
文件: 总9页 (文件大小:239K)
下载:  下载PDF数据表文档文件

N16T1630C2BZ2-70I

暂无描述

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0 NANOAMP

N16T1630C2BZ-55

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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19 NANOAMP

N16T1630C2BZ-55

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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11 ETC

N16T1630C2BZ-55

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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16 ETC

N16T1630C2BZ-55I

Standard SRAM, 1MX16, 55ns, CMOS, PBGA48

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0 NANOAMP

N16T1630C2BZ-70

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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19 ETC

N16T1630C2BZ-70

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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10 ETC

N16T1630C2BZ-70

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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16 NANOAMP

N16T1630C2BZ-70I

Standard SRAM, 1MX16, 70ns, CMOS, PBGA48

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1 NANOAMP

N1705

7-bit and 8-bit codes and their extension

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24 ETC

N1705

7-bit and 8-bit codes and their extension

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23 ETC

N170CH03

Silicon Controlled Rectifier, 138000mA I(T), 300V V(DRM),

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0 LITTELFUSE

N170CH04HOO

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB

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0 IXYS

N170CH08

Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB

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0 IXYS

N170CH08GOO

Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB

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0 IXYS