70HFR10 [NAINA]
SILICON POWER DIODE; 硅功率二极管
| 型号： | 70HFR10 |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | SILICON POWER DIODE |
| 文件： | 总1页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70HF/70HFR
NAINA
SILICON POWER DIODE
DO-5
FEATURES
•
•
•
•
Diffused Series
7
Available in Normal & Reverse Polarity
Industrial Grade
POLARITY
Ø 4.0
A
C
27
12
Available In Avalanche Characteristic
* Available in metric and UNF thread
ELECTRICALSPECIFICATIONS
C
A
Reverse
Normal
17 A/F
11.5
M8 x 1.25
16
IF
Maximum Average Forward
Current T=1250C
70A
1.2V
Ø 8.0
VFM
IFSM
IFRM
Maximum peak forward
voltage drop @ Rated IF(AV)
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive surge current
POLARITY
A
C
A
1000 A
350 A
C
Reverse
Normal
32
12
17 A/F
2
2
I t
Maximum I t rating (non-rep.) for 5 to 10
5000
2
11.5
M 8 x 1.25
msec.
A
Sec
THERMALMECHANICAL SPECIFICATIONS
θJC
Tj
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
0.450C/W
-550C to 1800C
-650C to 2000C
0.4 M-kg min,
0.6 M-kg max
13.5 & 30 gms.
Tstg
W
ELECTRICALRATINGS
TYPE
VRRM
70HF/HFR
Max. repetitive peak reverse
voltage (v)
10
100
20
40
60
80
100
120
140
160
200 400 600
800 1000
1200 1400 1600
VR(RMS) Max rms voltage(v)
70 140 280 420
100 200 400 600
80 160 240
200 200 200
560
700
840
980 1120
VR
Max. D.C. Blocking Voltage (V)
800 1000
1200 1400 1600
Recommended R.M.S. working
Voltage(v)
40
320
200
400
200
480
200
560
200
640
200
IR(AV)
Max. Average reverse leakage
200
current @ VRRM Tc 250C uA
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR 63 NOIDA(INDIA)
e-mail:sales@nainasemi.com , web site :www.nainasemi.com
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