150U20 [NAINA]
SILICON POWER DIODE; 硅功率二极管
| 型号： | 150U20 |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | SILICON POWER DIODE |
| 文件： | 总1页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
150U/150UR
NAINA
SILICON POWER DIODE
DO - 8
FEATURES
•
•
•
•
Diffused Series
Available in Normal & Reverse Polarity
Industrial Grade
Available In Avalanche Characteristic
ELECTRICALSPECIFICATIONS
IF
Maximum Average Forward
Current Te=1250C
150A
1.4V
VFM
IFSM
IFRM
Maximum peak forward
voltage drop @ Rated IF(AV)
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive
surge current
3000A
750A
I2t
Maximum I2t rating (non-rep.) for
5 to 10 msec.
2
45,000 A Sec
THERMALMECHANICALSPECIFICATIONS
θJC
Tj
Tstg
Maximum thermal resistance Junction to case
0.250C/W
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
-650C to 1500C
-650C to 2000C
2.0 M-kg min,
3.0 M-kg max
150 gms.
W
ELECTRICALRATINGS
TYPE
VRRM
150U/150UR
Max. repetitive peak reverse
voltage (v)
10
20
40
60
80
100
120
140
160
100
200 400 600
140 280 420
200 400 600
800 1000
1200 1400 1600
VR(RMS) Max. R.M.S. reverse voltage (V) 70
560
700
840
980 1120
VR
Max. D.C. Blocking Voltage (V) 100
800 1000
1200 1400 1600
Recommended R.M.S. working
40
80
160 240
320
200
400
200
480
200
560
200
640
200
Voltage(v)
IR(AV)
Max. Average reverse leakage
200
200 200 200
current @ VRRM Tc 250C (uA)
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR 63, NOIDA(INDIA)
e-mail:sales@nainasemi.com, web site: www.nainasemi.com
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