130MDS [NAINA]
Three - Phase Bridge Rectifier Excellent power volume ratio; - 三相桥式整流器出色的功率体积比
| 型号： | 130MDS |
| 厂家： | 
NAINA SEMICONDUCTOR LTD. |
| 描述： | Three - Phase Bridge Rectifier Excellent power volume ratio |
| 文件： | 总3页 (文件大小：486K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
130 MDS
Naina Semiconductor Ltd.
Three – Phase Bridge Rectifier
Features
Easy connections
Excellent power volume ratio
Insulated type
Voltage Ratings (TJ = 250C unless otherwise noted)
VRSM, Max.
VRRM, Max.
non-
IRRM
max @
repetitive
Type
number
Voltage
code
repetitive
peak reverse
voltage
(V)
peak reverse TJ max
voltage
(mA)
(V)
MDS
80
800
900
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
130 MDS
10
Thermal and Mechanical Specifications (TA = 250C unless otherwise noted)
Parameters
Symbol
TJ
Values
- 40 to + 150
- 40 to + 150
0.16
Units
0C
0C
Maximum operating junction temperature range
Maximum storage temperature range
DC operation per module
TStg
DC operation per junction
0.93
Maximum thermal
resistance, junction to case
Rth(JC)
0C/W
0C/W
120 Rect conduction angle per module
120 Rect conduction angle per junction
Per module, Mounting surface smooth, flat and
0.18
1.08
Maximum thermal
Rth(CS)
T
0.03
resistance, case to heatsink greased
to heatsink
4 to 6
3 to 4
176
Mounting torque ±10%
Approximate weight
Nm
g
to terminal
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
• Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
130 MDS
Naina Semiconductor Ltd.
Electrical Specifications (TJ = 250C unless otherwise noted)
Parameters
Maximum DC output current
Conditions
Symbol
Values
130
Units
A
1200 Rect conduction angle, TC = 850C
I0
t = 10ms
t = 8.3ms
t = 8.3ms
t = 10ms
T = 8.3ms
T = 10ms
T = 8.3ms
T = 10ms
1130
1180
950
No voltage
reapplied
Maximum peak one-cycle forward,
non-repetitive surge current
IFSM
A
100% VRRM
reapplied
1000
6400
5800
4500
4100
64000
TJ = TJ max.
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100% VRRM
reapplied
Maximum J2√t for fusing
T = 0.1 to 10ms, no voltage reapplied
J2√t
A2√s
Low level value of threshold voltage [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max
VF(TO)1
0.78
0.99
4.59
4.17
1.63
4000
V
High level value of threshold
[ I > π > IF(AV) ], @ TJ max
voltage
VF(TO)2
V
mΩ
mΩ
V
Low level value of forward slope
[ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max
resistance
r1
High level value of forward slope
[ I > π * IF(AV) ], @ TJ max
resistance
r2
Maximum forward voltage drop
RMS isolation voltage
Ipk = 100A, tP = 400 µs single junction
f = 50Hz, t = 1ms, all terminals shorted
VFM
VISO
V
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
130 MDS
Naina Semiconductor Ltd.
ALL DIMENSIONS IN MM
3
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
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