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RO3164A-3 [MURATA]

868.35 MHz SAW Resonator;
RO3164A-3
型号： RO3164A-3
厂家： muRata    muRata
描述：

868.35 MHz SAW Resonator

晶体 谐振器
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RO3164A-3  
• Ideal for European 868.35 MHz Transmitters  
• Very Low Series Resistance  
• Quartz Stability  
• Surface-Mount Ceramic Case with 21 mm2 Footprint  
• Complies with Directive 2002/95/EC (RoHS)  
868.35 MHz  
SAW  
Resonator  
The RO3164A-3 is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount ceramic case.  
It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency transmitters  
operating at 868.35 MHz.  
Absolute Maximum Ratings  
Rating  
Value  
+5  
Units  
dBm  
VDC  
°C  
CW RF Power Dissipation  
DC Voltage Between Terminals  
Case Temperature  
±30  
-40 to +85  
260  
Soldering Temperature (10 seconds / 5 cycles max.)  
°C  
SM5035-4  
Electrical Characteristics  
Characteristic  
Frequency (+25 °C) Nominal Frequency  
Tolerance from 868.35 MHz  
Insertion Loss  
Sym  
Notes  
2,3,4,5  
Minimum  
868.275  
Typical  
Maximum  
868.425  
±75  
Units  
f
RO3164A-3  
RO3164A-3  
MHz  
kHz  
dB  
C
Δf  
C
IL  
2,5,6  
5,6,7  
1.3  
6600  
800  
25  
2.0  
Q
Quality Factor  
Unloaded Q  
U
Q
T
50 Ω Loaded Q  
L
Temperature Stability  
Turnover Temperature  
10  
40  
°C  
kHz  
O
f
f
Turnover Frequency  
6,7,8  
O
C
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
|fA|  
0.032  
<±10  
ppm/°C  
Frequency Aging  
1
5
ppm/yr  
MΩ  
Ω
DC Insulation Resistance between Any Two Terminals  
1.0  
R
RF Equivalent RLC Model  
Motional Resistance  
Motional Inductance  
Motional Capacitance  
Shunt Static Capacitance  
13.8  
16.8  
2.0  
M
L
5, 6, 7, 9  
µH  
M
C
fF  
M
C
5, 6, 9  
2, 7  
1.8  
pF  
O
L
Test Fixture Shunt Inductance  
18.3  
nH  
TEST  
Lid Symbolization (in addition to Lot and/or Date Codes)  
814 // YWWS  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1.  
2.  
Frequency aging is the change in f with time and is specified at +65°C or  
C
6.  
7.  
The design, manufacturing process, and specifications of this device are  
subject to change without notice.  
less. Aging may exceed the specification for prolonged temperatures  
above +65°C. Typically, aging is greatest the first year after manufacture,  
decreasing in subsequent years.  
Derived mathematically from one or more of the following directly  
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .  
C
C
C
O
The center frequency, f , is measured at the minimum insertion loss point,  
8.  
Turnover temperature, T , is the temperature of maximum (or turnover)  
C
O
IL , with the resonator in the 50 Ω test system (VSWR ≤ 1.2:1). The  
frequency, f . The nominal frequency at any case temperature, T , may be  
MIN  
O
C
2
shunt inductance, L  
, is tuned for parallel resonance with C at f .  
TEST  
O C  
calculated from: f = f [1 - FTC (T -T ) ]. Typically oscillator T is  
O O C O  
Typically, f  
or f  
is approximately equal to the  
TRANSMITTER  
OSCILLATOR  
approximately equal to the specified resonator T .  
O
resonator f .  
C
9.  
This equivalent RLC model approximates resonator performance near the  
3.  
4.  
One or more of the following United States patents apply: 4,454,488 and  
4,616,197.  
resonant frequency and is provided for reference only. The capacitance C  
O
is the static (nonmotional) capacitance between the two terminals  
measured at low frequency (10 MHz) with a capacitance meter. The  
Typically, equipment utilizing this device requires emissions testing and  
government approval, which is the responsibility of the equipment  
manufacturer.  
measurement includes parasitic capacitance with "NC” pads unconnected.  
Case parasitic capacitance is approximately 0.05 pF. Transducer parallel  
capacitance can by calculated as: C ≈ C - 0.05 pF.  
5.  
Unless noted otherwise, case temperature T = +25°C±2°C.  
C
P
O
www.RFM.com  
E-mail: info@rfm.com  
Page 1 of 2  
©2008 by RF Monolithics, Inc.  
RO3164A-3 - 4/10/08  
Electrical Connections  
Equivalent LC Model  
The SAW resonator is bidirectional and may be  
installed with either orientation. The two terminals  
are interchangeable and unnumbered. The callout  
NC indicates no internal connection. The NC pads  
assist with mechanical positioning and stability.  
External grounding of the NC pads is  
Terminal  
0.05 pF*  
+
C
p
=
C
o
0.05 pF  
C
p
*Case Parasitics  
Terminal  
recommended to help reduce parasitic  
capacitance in the circuit.  
Lm  
C m  
Rm  
Temperature Characteristics  
The curve shown on the right  
accounts for resonator  
contribution only and does not  
include LC component  
Typical Test Circuit  
The test circuit inductor, L  
fC = fO , TC = TO  
, is tuned to resonate with the static  
TEST  
0
0
capacitance, C , at F .  
O
C
-50  
-50  
-100  
-150  
-100  
-150  
-200  
temperature contributions.  
ELECTRICAL TEST  
-200  
-80 -60 -40 -20  
Typical Circuit Board  
Land Pattern  
The circuit board land pattern  
0
+40 +60 +80  
+20  
Ω
Ω
To 50  
Network Analyzer  
From 50  
Network Analyzer  
T = TC - TO ( °C )  
Δ
shown below is one possible  
design. The optimum land pattern is dependent on the circuit board  
assembly process which varies by manufacturer. The distance between  
adjacent land edges should be at a maximum to minimize parasitic  
capacitance. Trace lengths from terminal lands to other components should  
be short and wide to minimize parasitic series inductances.  
POWER TEST  
(4 Places)  
P
INCIDENT  
Terminal  
NC  
Terminal  
Low-Loss  
Matching  
Network to  
Typical Dimension:  
0.010 to 0.047 inch  
(0.25 to 1.20 mm)  
Ω
at FC  
50 Source  
NC  
P
REFLECTED  
Ω
50  
Case Design  
P
P
INCIDENT - REFLECTED  
CW RF Power Dissipation =  
Top View  
Side View  
Bottom View  
B
C
E (3x)  
F (4x)  
Typical Application Circuits  
Typical Low-Power Transmitter Application  
4
+9VDC  
Ω
200k  
Modulation  
Input  
47  
3
1
C1  
C2  
L1  
(Antenna)  
2
G (1x  
RF Bypass  
RO3XXXA  
D
Bottom View  
470  
Millimeters  
Inches  
Dimensions  
Typical Local Oscillator Applications  
Min  
Nom  
Max  
Min  
Nom Max  
Output  
A
B
C
D
E
F
4.87  
3.37  
1.45  
1.35  
.67  
5.0  
3.5  
5.13  
3.63  
1.60  
1.50  
.93  
.191  
.132  
.057  
.040  
.026  
.014  
.042  
.196  
.137  
.060  
.057  
.031  
.019  
.047  
.201  
.142  
.062  
.059  
.036  
.024  
.052  
+VDC  
C1  
+VDC  
1.53  
1.43  
.80  
L1  
.37  
.50  
.63  
C2  
G
1.07  
1.20  
1.33  
RO3XXXA  
Bottom View  
RF Bypass  
www.RFM.com  
E-mail: info@rfm.com  
Page 2 of 2  
©2008 by RF Monolithics, Inc.  
RO3164A-3 - 4/10/08  

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